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Ahmad Zubair
Ahmad Zubair
Research Engineer, Intel Corporation
Zweryfikowany adres z mit.edu - Strona główna
Tytuł
Cytowane przez
Cytowane przez
Rok
Transport Properties of a MoS2/WSe2 Heterojunction Transistor and its Potential for Application
A Nourbakhsh, A Zubair, MS Dresselhaus, T Palacios
Nano Letters, 2016
3642016
MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
A Nourbakhsh, A Zubair, RN Sajjad, A Tavakkoli KG, W Chen, S Fang, ...
Nano letters 16 (12), 7798-7806, 2016
3252016
Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2
L Zhou, K Xu, A Zubair, A Liao, W Fang, F Ouyang, YH Lee, K Ueno, ...
Journal of the American Chemical Society, 2015
2912015
High-performance WSe2 complementary metal oxide semiconductor technology and integrated circuits
L Yu, A Zubair, EJG Santos, X Zhang, Y Lin, Y Zhang, T Palacios
Nano Letters, 2015
1842015
Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting
X Zhang, J Grajal, JL Vazquez-Roy, U Radhakrishna, X Wang, W Chern, ...
Nature 566 (7744), 368-372, 2019
1732019
Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack
A Nourbakhsh, A Zubair, S Joglekar, M Dresselhaus, T Palacios
Nanoscale, 2017
1172017
Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics
L Yu, D El-Damak, U Radhakrishna, X Ling, A Zubair, Y Lin, Y Zhang, ...
Nano Letters 16 (10), 6349-6356, 2016
1152016
Synthesis of High‐Quality Large‐Area Homogenous 1T′ MoTe2 from Chemical Vapor Deposition
L Zhou, A Zubair, Z Wang, X Zhang, F Ouyang, K Xu, W Fang, K Ueno, ...
Advanced Materials 28 (43), 9526-9531, 2016
1132016
A rational strategy for graphene transfer on substrates with rough features
JY Hong, YC Shin, A Zubair, Y Mao, T Palacios, MS Dresselhaus, SH Kim, ...
Advanced Materials, 2016
832016
Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit
Y Zhang, M Sun, J Perozek, Z Liu, A Zubair, D Piedra, N Chowdhury, ...
IEEE Electron Device Letters 40 (1), 75-78, 2019
792019
Hot electron transistor with van der Waals base-collector heterojunction and high performance GaN emitter
A Zubair, A Nourbakhsh, JY Hong, M Qi, Y Song, D Jena, J Kong, ...
Nano Letters, 2017
642017
Role of Molecular Sieves in the CVD Synthesis of Large‐Area 2D MoTe2
L Zhou, K Xu, A Zubair, X Zhang, F Ouyang, T Palacios, MS Dresselhaus, ...
Advanced Functional Materials 27 (3), 2017
632017
Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings
Y Zhang, M Sun, Z Liu, D Piedra, M Pan, X Gao, Y Lin, A Zubair, L Yu, ...
Electron Devices Meeting (IEDM), 2016 IEEE International, 10.2. 1-10.2. 4, 2016
482016
Negative Capacitance Carbon Nanotube FETs
T Srimani, G Hills, MD Bishop, U Radhakrishna, A Zubair, RS Park, ...
IEEE Electron Device Letters 39 (2), 304-307, 2018
342018
Enhancement-Mode Single-layer CVD MoS2 FET Technology for Digital Electronics
L Yu, D El-Damak, S Ha, X Ling, Y Lin, JK A. Zubair, Y.-H. Lee, ...
IEEE International Electron Devices Meeting, 2015
292015
15-nm channel length MoS2FETs with single- and double-gate structures
A Nourbakhsh, A Zubair, S Huang, X Ling, MS Dresselhaus, J Kong, ...
2015 Symposium on VLSI Technology (VLSI Technology), T28-T29, 2015
262015
GaN FinFETs and Trigate Devices for Power and RF Applications: Review and Perspective
Y Zhang, A Zubair, Z Liu, M Xiao, J Perozek, Y Ma, T Palacios
Semiconductor Science and Technology, 2021
202021
Impact of Al2O3 Passivation on the Photovoltaic Performance of Vertical WSe2 Schottky Junction Solar Cells
E McVay, A Zubair, Y Lin, A Nourbakhsh, T Palacios
ACS Applied Materials & Interfaces 12 (52), 57987-57995, 2020
132020
High-yield large area MoS2 technology: Material, device and circuits co-optimization
L Yu, D El-Damak, U Radhakrishna, A Zubair, D Piedra, X Ling, Y Lin, ...
2016 IEEE International Electron Devices Meeting (IEDM), 5.7. 1-5.7. 4, 2016
102016
Serially Connected Monolayer MoS2 FETs with Channel Patterned by a 7.5 nm Resolution Directed Self‐ Assembly Lithography
A Nourbakhsh, A Zubair, A Tavakkoli, R Sajjad, X Ling, M Dresselhaus, ...
VLSI Technology Symposium, 2016
92016
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