Krystian Michalczewski
Krystian Michalczewski
Vigo System S.A.
Zweryfikowany adres z vigo.com.pl
Tytuł
Cytowane przez
Cytowane przez
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Demonstration of HOT LWIR T2SLs InAs/InAsSb photodetectors grown on GaAs substrate
K Michalczewski, P Martyniuk, CH Wu, J Jureńczyk, K Grodecki, ...
Infrared Physics & Technology 95, 222-226, 2018
162018
Microwave Plasma Chemical Vapor Deposition of SbxOy/C negative electrodes and their compatibility with lithium and sodium Hückel salts—based, tailored electrolytes
A Bitner-Michalska, K Michalczewski, J Zdunek, A Ostrowski, G Żukowska, ...
Electrochimica Acta 210, 395-400, 2016
152016
Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Opto-Electronics Review 24 (1), 40-45, 2016
152016
Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Optical and Quantum Electronics 48 (9), 1-7, 2016
142016
Interfacial misfit array technique for GaSb growth on GaAs (001) substrate by molecular beam epitaxy
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Electronic Materials 47 (1), 299-304, 2018
122018
Electrical properties of midwave and longwave InAs/GaSb superlattices grown on GaAs substrates by molecular beam epitaxy
D Benyahia, K Michalczewski, J Boguski, A Kębłowski, P Martyniuk, ...
Nanoscale research letters 13 (1), 1-7, 2018
102018
Investigation on the InAs1–xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Semiconductors 39 (3), 033003, 2018
102018
Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate
D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ...
Journal of Crystal Growth 483, 26-30, 2018
92018
Investigation of surface leakage current in MWIR HgCdTe and InAsSb barrier detectors
M Kopytko, E Gomółka, K Michalczewski, P Martyniuk, J Rutkowski, ...
Semiconductor Science and Technology 33 (12), 125010, 2018
82018
Electrical and optical performance of mid-wavelength infrared InAsSb heterostructure detectors
E Gomółka, M Kopytko, K Michalczewski, Ł Kubiszyn, A Kębłowski, ...
Electro-Optical and Infrared Systems: Technology and Applications XIV 10433 …, 2017
72017
Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique.
K Michalczewski, F Ivaldi, Ł Kubiszyn, D Benyahia, J Boguski, ...
Acta Physica Polonica, A. 132 (2), 2017
72017
Application of localization landscape theory and the k· p model for direct modeling of carrier transport in a type II superlattice InAs/InAsSb photoconductor system
TY Tsai, K Michalczewski, P Martyniuk, CH Wu, YR Wu
Journal of Applied Physics 127 (3), 033104, 2020
52020
Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates
K Murawski, E Gomółka, M Kopytko, K Grodecki, K Michalczewski, ...
Progress in Natural Science: Materials International 29 (4), 472-476, 2019
42019
InAs/InAsSb strain-balanced superlattices for longwave infrared detectors
T Manyk, K Michalczewski, K Murawski, P Martyniuk, J Rutkowski
Sensors 19 (8), 1907, 2019
42019
Study on the specific contact resistance of evaporated or electroplated golden contacts to n-and p-type InAs epitaxial layers grown by MBE
J Boguski, K Kolwas, K Michalczewski, J Piotrowski, J Wróbel, K Gorczyca, ...
Materials Science in Semiconductor Processing 81, 60-63, 2018
42018
Electrical and optical performance of midwave infrared InAsSb heterostructure detectors
E Gomółka, M Kopytko, OK Markowska, K Michalczewski, Ł Kubiszyn, ...
Optical Engineering 57 (2), 027107, 2018
42018
Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates.
D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ...
Acta Physica Polonica, A. 132 (2), 2017
42017
Demonstration of the very long wavelength infrared type-II superlattice InAs/InAsSb GaAs immersed photodetector operating at thermoelectric cooling
K Michalczewski, P Martyniuk, Ł Kubiszyn, CH Wu, YR Wu, J Jureńczyk, ...
IEEE Electron Device Letters 40 (9), 1396-1398, 2019
32019
Raman scattering of InAsSb
K Grodecki, K Murawski, K Michalczewski, B Budner, P Martyniuk
AIP Advances 9 (2), 025107, 2019
32019
P-type doping of GaSb by beryllium grown on GaAs (001) substrate by molecular beam epitaxy
D Benyahia, L Kubiszyn, K Michalczewski, A Keblwski, P Martyniuk, ...
JSTS: Journal of Semiconductor Technology and Science 16 (5), 695-701, 2016
32016
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