| Demonstration of HOT LWIR T2SLs InAs/InAsSb photodetectors grown on GaAs substrate K Michalczewski, P Martyniuk, CH Wu, J Jureńczyk, K Grodecki, ... Infrared Physics & Technology 95, 222-226, 2018 | 36 | 2018 |
| Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ... Optical and Quantum Electronics 48, 1-7, 2016 | 25 | 2016 |
| Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates K Murawski, E Gomółka, M Kopytko, K Grodecki, K Michalczewski, ... Progress in Natural Science: Materials International 29 (4), 472-476, 2019 | 21 | 2019 |
| Interfacial misfit array technique for GaSb growth on GaAs (001) substrate by molecular beam epitaxy D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ... Journal of Electronic Materials 47, 299-304, 2018 | 21 | 2018 |
| Microwave Plasma Chemical Vapor Deposition of SbxOy/C negative electrodes and their compatibility with lithium and sodium Hückel salts—based, tailored electrolytes A Bitner-Michalska, K Michalczewski, J Zdunek, A Ostrowski, G Żukowska, ... Electrochimica Acta 210, 395-400, 2016 | 20 | 2016 |
| Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy D Benyahia, Ł Kubiszyn, K Michalczewski, A Kębłowski, P Martyniuk, ... Opto-Electronics Review 24 (1), 40-45, 2016 | 20 | 2016 |
| Application of localization landscape theory and the k· p model for direct modeling of carrier transport in a type II superlattice InAs/InAsSb photoconductor system TY Tsai, K Michalczewski, P Martyniuk, CH Wu, YR Wu Journal of Applied Physics 127 (3), 2020 | 19 | 2020 |
| Electrical properties of midwave and longwave InAs/GaSb superlattices grown on GaAs substrates by molecular beam epitaxy D Benyahia, Ł Kubiszyn, K Michalczewski, J Boguski, A Kębłowski, ... Nanoscale Research Letters 13, 1-7, 2018 | 19 | 2018 |
| Investigation of surface leakage current in MWIR HgCdTe and InAsSb barrier detectors M Kopytko, E Gomółka, K Michalczewski, P Martyniuk, J Rutkowski, ... Semiconductor Science and Technology 33 (12), 125010, 2018 | 19 | 2018 |
| Demonstration of the very long wavelength infrared type-II superlattice InAs/InAsSb GaAs immersed photodetector operating at thermoelectric cooling K Michalczewski, P Martyniuk, Ł Kubiszyn, CH Wu, YR Wu, J Jureńczyk, ... IEEE Electron Device Letters 40 (9), 1396-1398, 2019 | 17 | 2019 |
| Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ... Journal of Crystal Growth 483, 26-30, 2018 | 17 | 2018 |
| InAs/InAsSb strain-balanced superlattices for longwave infrared detectors T Manyk, K Michalczewski, K Murawski, P Martyniuk, J Rutkowski Sensors 19 (8), 1907, 2019 | 16 | 2019 |
| Investigation on the InAs1–xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy D Benyahia, K Michalczewski, A Kębłowski, P Martyniuk, J Piotrowski, ... Journal of Semiconductors 39 (3), 033003, 2018 | 12 | 2018 |
| Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors K Michalczewski, TY Tsai, P Martyniuk, CH Wu Bulletin of the Polish Academy of Sciences. Technical Sciences 67 (1), 2019 | 11 | 2019 |
| The performance of the ICIP Ga-free superlattice longwave infrared photodetector for high operating temperature W Gawron, Ł Kubiszyn, K Michalczewski, T Manyk, J Piotrowski, ... Infrared Physics & Technology 128, 104499, 2023 | 9 | 2023 |
| Demonstration of the longwave type-II superlattice InAs/InAsSb cascade photodetector for high operating temperature W Gawron, Ł Kubiszyn, K Michalczewski, J Piotrowski, P Martyniuk IEEE Electron Device Letters 43 (9), 1487-1490, 2022 | 8 | 2022 |
| Low-frequency noise measurements of IR photodetectors with voltage cross correlation system K Achtenberg, J Mikołajczyk, C Ciofi, G Scandurra, K Michalczewski, ... Measurement 183, 109867, 2021 | 8 | 2021 |
| 1/f noise in InAs/InAsSb superlattice photoconductors Ł Ciura, A Kolek, K Michalczewski, K Hackiewicz, P Martyniuk IEEE Transactions on Electron Devices 67 (8), 3205-3210, 2020 | 8 | 2020 |
| Method of electron affinity evaluation for the type-2 InAs/InAs1−xSbx superlattice T Manyk, K Murawski, K Michalczewski, K Grodecki, J Rutkowski, ... Journal of materials science 55 (12), 5135-5144, 2020 | 8 | 2020 |
| Electronic band structure of InAs/InAsSb type-II superlattice for HOT LWIR detectors T Manyk, K Michalczewski, K Murawski, K Grodecki, J Rutkowski, ... Results in Physics 11, 1119-1123, 2018 | 8 | 2018 |
