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Dimitrios N. Kouvatsos
Dimitrios N. Kouvatsos
Zweryfikowany adres z inn.demokritos.gr
Tytuł
Cytowane przez
Cytowane przez
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Charging effects in silicon nanocrystals within layers, fabricated by chemical vapor deposition, oxidation, and annealing
DN Kouvatsos, V Ioannou-Sougleridis, AG Nassiopoulou
Applied physics letters 82 (3), 397-399, 2003
1452003
Photoluminescence from nanocrystalline silicon in superlattices
P Photopoulos, AG Nassiopoulou, DN Kouvatsos, A Travlos
Applied Physics Letters 76 (24), 3588-3590, 2000
1332000
High-performance thin-film transistors in large grain size polysilicon deposited by thermal decomposition of disilane
DN Kouvatsos, AT Voutsas, MK Hatalis
IEEE Transactions on Electron Devices 43 (9), 1399-1406, 1996
591996
Fluorine‐Enhanced Oxidation of Silicon: Effects of Fluorine on Oxide Stress and Growth Kinetics
D Kouvatsos, JG Huang, RJ Jaccodine
Journal of the Electrochemical Society 138 (6), 1752, 1991
501991
Photo-and electroluminescence from nanocrystalline silicon single and multilayer structures
P Photopoulos, AG Nassiopoulou, DN Kouvatsos, A Travlos
Materials Science and Engineering: B 69, 345-349, 2000
462000
Nickel nanoparticle deposition at room temperature for memory applications
E Verrelli, D Tsoukalas, K Giannakopoulos, D Kouvatsos, P Normand, ...
Microelectronic engineering 84 (9-10), 1994-1997, 2007
352007
Interface state density reduction and effect of oxidation temperature on fluorine incorporation and profiling for fluorinated metal oxide semiconductor capacitors
DN Kouvatsos, FA Stevie, RJ Jaccodine
Journal of the Electrochemical Society 140 (4), 1160, 1993
291993
Polycrystalline silicon thin film transistors fabricated in various solid phase crystallized films deposited on glass substrates
DN Kouvatsos, AT Voutsas, MK Hatalis
Journal of electronic materials 28, 19-25, 1999
281999
Influence of a high electric field on the photoluminescence from silicon nanocrystals in SiO2
V Ioannou-Sougleridis, B Kamenev, DN Kouvatsos, AG Nassiopoulou
Materials Science and Engineering: B 101 (1-3), 324-328, 2003
272003
Characterization of various low-k dielectrics for possible use in applications at temperatures below 160° C
M Vasilopoulou, S Tsevas, AM Douvas, P Argitis, D Davazoglou, ...
Journal of Physics: Conference Series 10 (1), 218, 2005
232005
Influence of polysilicon film thickness on radiation response of advanced excimer laser annealed polycrystalline silicon thin film transistors
V Davidović, DN Kouvatsos, N Stojadinović, AT Voutsas
Microelectronics Reliability 47 (9-11), 1841-1845, 2007
202007
Charging effects in silicon nanocrystals embedded in SiO2 films
DN Kouvatsos, V Ioannou-Sougleridis, AG Nassiopoulou
Materials Science and Engineering: B 101 (1-3), 270-274, 2003
202003
Effect of silicon thickness on the degradation mechanisms of sequential laterally solidified polycrystalline silicon TFTs during hot-carrier stress
AT Voutsas, DN Kouvatsos, L Michalas, GJ Papaioannou
IEEE electron device letters 26 (3), 181-184, 2005
182005
Silicon‐fluorine bonding and fluorine profiling in SiO2 films grown by NF3‐enhanced oxidation
D Kouvatsos, FP McCluskey, RJ Jaccodine, FA Stevie
Applied physics letters 61 (7), 780-782, 1992
171992
Short channel effects on LTPS TFT degradation
DC Moschou, CG Theodorou, NA Hastas, A Tsormpatzoglou, ...
Journal of Display Technology 9 (9), 747-754, 2012
162012
Characterization of various insulators for possible use as low-k dielectrics deposited at temperatures below 200° C
M Vasilopoulou, AM Douvas, D Kouvatsos, P Argitis, D Davazoglou
Microelectronics Reliability 45 (5-6), 990-993, 2005
162005
Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665° C strain point glass substrates
MK Hatalis, DN Kouvatsos, JH Kung, AT Voutsas, J Kanicki
Thin solid films 338 (1-2), 281-285, 1999
161999
Characterization of double gate TFTs fabricated in advanced SLS ELA polycrystalline silicon films
DN Kouvatsos, FV Farmakis, DC Moschou, GP Kontogiannopoulos, ...
Solid-state electronics 51 (6), 936-940, 2007
152007
Fluorine‐enhanced oxidation of polycrystalline silicon and application to thin‐film transistor fabrication
DN Kouvatsos, MK Hatalis, RJ Jaccodine
Applied physics letters 61 (8), 937-939, 1992
141992
SiO2 Film Stress—Thickness Dependence, Non‐Planar Oxidation, and Fluorine‐Related Effects
D Kouvatsos, JG Huang, V Saikumar, PJ Macfarlane, RJ Jaccodine, ...
Journal of the Electrochemical Society 139 (8), 2322, 1992
141992
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