GaN FinFETs and trigate devices for power and RF applications: Review and perspective Y Zhang, A Zubair, Z Liu, M Xiao, J Perozek, Y Ma, T Palacios
Semiconductor Science and Technology 36 (5), 054001, 2021
87 2021 3.3 kV multi-channel AlGaN/GaN Schottky barrier diodes with P-GaN termination M Xiao, Y Ma, K Cheng, K Liu, A Xie, E Beam, Y Cao, Y Zhang
IEEE Electron Device Letters 41 (8), 1177-1180, 2020
78 2020 10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes M Xiao, Y Ma, K Liu, K Cheng, Y Zhang
IEEE Electron Device Letters 42 (6), 808-811, 2021
74 2021 Supercompliant and Soft H Ma, C Li, Y Ma, H Wang, ZW Rouse, Z Zhang, C Slebodnick, A Alatas, ...
Physical review letters 123 (15), 155901, 2019
43 2019 Thermal switching of thermoresponsive polymer aqueous solutions C Li, Y Ma, Z Tian
ACS Macro Letters 7 (1), 53-58, 2018
41 2018 5 kV multi-channel AlGaN/GaN power Schottky barrier diodes with junction-fin-anode M Xiao, Y Ma, Z Du, X Yan, R Zhang, K Cheng, K Liu, A Xie, E Beam, ...
2020 IEEE International Electron Devices Meeting (IEDM), 5.4. 1-5.4. 4, 2020
34 2020 Tri-gate GaN junction HEMT Y Ma, M Xiao, Z Du, X Yan, K Cheng, M Clavel, MK Hudait, I Kravchenko, ...
Applied Physics Letters 117 (14), 2020
34 2020 Multi-Channel Monolithic-Cascode HEMT (MC2 -HEMT): A New GaN Power Switch up to 10 kV M Xiao, Y Ma, Z Du, V Pathirana, K Cheng, A Xie, E Beam, Y Cao, ...
2021 IEEE International Electron Devices Meeting (IEDM), 5.5. 1-5.5. 4, 2021
30 2021 An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics F Zhou, H Gong, M Xiao, Y Ma, Z Wang, X Yu, L Li, L Fu, HH Tan, Y Yang, ...
Nature Communications 14 (1), 4459, 2023
29 2023 Degradation and recovery of GaN HEMTs in overvoltage hard switching near breakdown voltage JP Kozak, Q Song, R Zhang, Y Ma, J Liu, Q Li, W Saito, Y Zhang
IEEE Transactions on Power Electronics 38 (1), 435-446, 2022
26 2022 Simple theoretical model for thermal conductivity of crystalline polymers H Ma, Y Ma, Z Tian
ACS Applied Polymer Materials 1 (10), 2566-2570, 2019
22 2019 Experimental Phonon Dispersion and Lifetimes of Tetragonal CH3 NH3 PbI3 Perovskite Crystals H Ma, Y Ma, H Wang, C Slebodnick, A Alatas, JJ Urban, Z Tian
The journal of physical chemistry letters 10 (1), 1-6, 2018
20 2018 10 kV Ga2 O3 Charge-Balance Schottky Rectifier Operational at 200 °C Y Qin, M Xiao, M Porter, Y Ma, J Spencer, Z Du, AG Jacobs, K Sasaki, ...
IEEE Electron Device Letters, 2023
18 2023 Tri-gate GaN junction HEMTs: physics and performance space Y Ma, M Xiao, Z Du, H Wang, Y Zhang
IEEE Transactions on Electron Devices 68 (10), 4854-4861, 2021
18 2021 NiO junction termination extension for high-voltage (> 3 kV) Ga2O3 devices M Xiao, B Wang, J Spencer, Y Qin, M Porter, Y Ma, Y Wang, K Sasaki, ...
Applied Physics Letters 122 (18), 2023
16 2023 Evaluation of 650V, 100A direct-drive GaN power switch for electric vehicle powertrain applications Q Song, JP Kozak, M Xiao, Y Ma, B Wang, R Zhang, R Volkov, K Smith, ...
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021
12 2021 Superjunction power transistors with interface charges: A case study for GaN Y Ma, M Xiao, R Zhang, H Wang, Y Zhang
IEEE Journal of the Electron Devices Society 8, 42-48, 2019
12 2019 First demonstration of vertical superjunction diode in GaN M Xiao, Y Ma, Z Du, Y Qin, K Liu, K Cheng, F Udrea, A Xie, E Beam, ...
2022 International Electron Devices Meeting (IEDM), 35.6. 1-35.6. 4, 2022
11 2022 1 kV GaN-on-Si quasi-vertical Schottky rectifier Y Qin, M Xiao, R Zhang, Q Xie, T Palacios, B Wang, Y Ma, I Kravchenko, ...
IEEE Electron Device Letters, 2023
9 2023 Kilovolt tri-gate GaN junction HEMTs with high thermal stability Y Ma, M Xiao, Y Zhang, Z Du, X Yan, H Wang, K Cheng, M Clavel, ...
2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021
9 2021 