Obserwuj
Joseph P. Kozak
Joseph P. Kozak
Johns Hopkins University Applied Physics Laboratory
Zweryfikowany adres z vt.edu
Tytuł
Cytowane przez
Cytowane przez
Rok
Surge-energy and overvoltage ruggedness of P-gate GaN HEMTs
R Zhang, JP Kozak, M Xiao, J Liu, Y Zhang
IEEE Transactions on Power Electronics 35 (12), 13409-13419, 2020
402020
Impact of accelerated stress-tests on SiC MOSFET precursor parameters
JP Kozak, KDT Ngo, DJ DeVoto, JJ Major
2018 Second International Symposium on 3D Power Electronics Integration and …, 2018
222018
Touch screens: A pressing technology
T Hoye, J Kozak
Tenth Annual Freshman Engineering Sustainability in the New Millennium …, 2010
192010
True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching
JP Kozak, R Zhang, Q Song, J Liu, W Saito, Y Zhang
IEEE Electron Device Letters, 2021
182021
Dynamic breakdown voltage of GaN power HEMTs
R Zhang, JP Kozak, Q Song, M Xiao, J Liu, Y Zhang
2020 IEEE International Electron Devices Meeting (IEDM), 23.3. 1-23.3. 4, 2020
182020
Trends in SiC MOSFET threshold voltage and on-resistance measurements from thermal cycling and electrical switching stresses
JP Kozak, DJ DeVoto, JJ Major, KDT Ngo
CIPS 2018; 10th International Conference on Integrated Power Electronics …, 2018
182018
Analytical and experimental optimization of external gate resistance for safe rapid turn on of normally off GaN HFETs
A Barchowsky, JP Kozak, MR Hontz, WE Stanchina, GF Reed, ZH Mao, ...
2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 1958-1963, 2017
172017
Surge energy robustness of GaN gate injection transistors
R Zhang, JP Kozak, J Liu, M Xiao, Y Zhang
2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020
132020
An Analytical Model for Predicting Turn-on Overshoot in Normally-off GaN HEMTs
JP Kozak, A Barchowsky, MR Hontz, NB Koganti, W Stanchina, G Reed, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019
132019
A GaN-based modular multilevel DC-DC converter for high-density anode discharge power modules
A Barchowsky, JP Kozak, BM Grainger, WE Stanchina, GF Reed
2017 IEEE Aerospace Conference, 1-10, 2017
132017
Failure mechanisms of cascode GaN HEMTs under overvoltage and surge energy events
Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang
2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021
102021
Hard-switched overvoltage robustness of p-gate GaN HEMTs at increasing temperatures
JP Kozak, R Zhang, J Liu, Q Song, M Xiao, Y Zhang
2020 IEEE Energy Conversion Congress and Exposition (ECCE), 677-682, 2020
92020
Robustness of Cascode GaN HEMTs in Unclamped Inductive Switching
Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang
IEEE Transactions on Power Electronics 37 (4), 4148-4160, 2021
72021
Robustness of cascode GaN HEMTs under repetitive overvoltage and surge energy stresses
Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang
2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 363-369, 2021
52021
Robustness of GaN gate injection transistors under repetitive surge energy and overvoltage
JP Kozak, Q Song, R Zhang, J Liu, Y Zhang
2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021
52021
Degradation of SiC MOSFETs under High-Bias Switching Events
JP Kozak, R Zhang, J Liu, KDT Ngo, Y Zhang
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2021
42021
Robustness evaluation and degradation mechanisms of sic mosfets overstressed by switched stimuli
JP Kozak, R Zhang, H Yang, KDT Ngo, Y Zhang
2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 1135-1140, 2020
42020
Trace phase detection and strain characterization from serial X-ray free-electron laser crystallography of a Pr0. 5Ca0. 5MnO3 powder
KR Beyerlein, C Jooss, A Barty, R Bean, S Boutet, SS Dhesi, RB Doak, ...
Powder Diffraction 30 (S1), S25-S30, 2015
42015
Physics of degradation in sic mosfets stressed by overvoltage and overcurrent switching
JP Kozak, R Zhang, J Liu, KDT Ngo, Y Zhang
2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020
32020
Static and Dynamic Characterization of a 2.5 kV SiC MOSFET
SR El-Helw, JP Kozak, R Burgos, K Ngo, D Boroyevich
2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2018
32018
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