| A junctionless nanowire transistor with a dual-material gate H Lou, L Zhang, Y Zhu, X Lin, S Yang, J He, M Chan Electron Devices, IEEE Transactions on 59 (7), 1829-1836, 2012 | 191 | 2012 |
| Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS Processes M Shi, J He, L Zhang, C Ma, X Zhou, H Lou, H Zhuang, R Wang, Y Li, ... Electron Device Letters, IEEE 32 (7), 955-957, 2011 | 102 | 2011 |
| Uniaxial strain effects on electron ballistic transport in gate-all-around silicon nanowire MOSFETs L Zhang, H Lou, J He, M Chan Electron Devices, IEEE Transactions on 58 (11), 3829-3836, 2011 | 28 | 2011 |
| Suppression of tunneling leakage current in junctionless nanowire transistors H Lou, D Li, Y Dong, X Lin, J He, S Yang, M Chan Semiconductor Science and Technology 28 (12), 125016, 2013 | 13 | 2013 |
| A compact CMOS compatible oxide antifuse with polysilicon diode driver J He, WT Chan, C Wang, H Lou, R Wang, L Li, H Liang, W Wu, Y Ye, Y Ma, ... Electron Devices, IEEE Transactions on 59 (9), 2539-2541, 2012 | 10 | 2012 |
| Effects of Fin Sidewall Angle on Subthreshold Characteristics of Junctionless Multigate Transistors H Lou, D Li, Y Dong, X Lin, S Yang, J He, M Chan Japanese Journal of Applied Physics 52 (10R), 104302, 2013 | 5 | 2013 |
| Silicon-Based Nanowire MOSFETs: From Process and Device Physics to Simulation and Modeling J He, H Lou, L Zhang, M Chan | 5* | |
| A new nonlinear parameterized model order reduction technique combining the interpolation method and Proper Orthogonal Decomposition Z Xu, X Lin, H Zhuang, B Jiang, H Lou, J He ASIC (ASICON), 2011 IEEE 9th International Conference on, 886-889, 2011 | 4 | 2011 |
| An Analytical Terahertz Detection Theory for Silicon-Based Nanowire MOS Field Effect Transistor Y Chen, J He, X Mu, H Lou, L Zhang, Y Song, Z Yang, J Zhu, J Cao Journal of Computational and Theoretical Nanoscience 6 (10), 2247-2254, 2009 | 2 | 2009 |
| Characteristics of subband current ratio in double-gate MOSFET H Lou, X Lin, L Zhang, X Zhang, J Xu, W Wu, Z Liu, W Wang, W Zhao, ... Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International …, 2010 | 1 | 2010 |
| Investigations of junctionless nanowire transistors with non-uniform channel Y Zhu, H Lou, B Li, X Lin Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th …, 2012 | | 2012 |
| Investigations of fin vertical nonuniformity effects on junctionless multigate transistor H Lou, B Li, X Lin, J He, M Chan Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th …, 2012 | | 2012 |
| Bandstructures of unstrained and strained silicon nanowire L Zhang, H Lou, Z Liu, F He, M Chan Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE …, 2010 | | 2010 |
| Numerical simulation on novel nano-scale lateral double-gate tunneling field effect transistor F He, H Lou, W Zhou, L Chen, Y Xu, H Zhuang, X Lin Nanoelectronics Conference (INEC), 2010 3rd International, 185-186, 2010 | | 2010 |
| Terahert detection analysis of nanowire gated field effect transistor Y Chen, J He, X Mu, H Lou, L Zhang, Y Song Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE …, 2008 | | 2008 |
| Predict the characteristics of a terahertz photomixer based on HEMT with the cap region from the analyitcal theory Y Chen, J He, X Mou, Y Wei, H Lou, C Liu, X Lin, X Zhang Mixed Design of Integrated Circuits and Systems, 2008. MIXDES 2008. 15th …, 2008 | | 2008 |
| An Analytic Terahertz Signal Detection Model of Silicon-based Nanowire Gated Field Effect Transistor F He, Y Chen, X Mu, H Lou, L Zhang, Y Song | | |
| Nonparabolicity Effects of the Ultra-thin Body Double-gate MOSFETs H Lou | | |
