Xiao Sun (孙啸)
Xiao Sun (孙啸)
IBM Yorktown Heights, Yale PhD' 13
Zweryfikowany adres z us.ibm.com
Tytuł
Cytowane przez
Cytowane przez
Rok
Characteristics and mechanism of conduction/set process in TiN∕ ZnO∕ Pt resistance switching random-access memories
N Xu, L Liu, X Sun, X Liu, D Han, Y Wang, R Han, J Kang, B Yu
Applied Physics Letters 92, 232112, 2008
4072008
Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention
N Xu, LF Liu, X Sun, C Chen, Y Wang, DD Han, XY Liu, RQ Han, JF Kang, ...
Semiconductor Science and Technology 23, 075019, 2008
1412008
Resistive Switching in Films for Nonvolatile Memory Application
X Sun, B Sun, L Liu, N Xu, X Liu, R Han, J Kang, G Xiong, TP Ma
Electron Device Letters, IEEE 30 (4), 334-336, 2009
1222009
Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method
X Sun, OI Saadat, KS Chang-Liao, T Palacios, S Cui, TP Ma
Applied Physics Letters 102 (10), 103504, 2013
782013
Hybrid 8-bit floating point (HFP8) training and inference for deep neural networks
X Sun, J Choi, CY Chen, N Wang, S Venkataramani, X Cui, W Zhang, ...
682019
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
M Heyns, G Brammertz, M Caymax, G Groeseneken, TY Hoffmann, D Lin, ...
Proceedings of the International Symposium on Technology Evolution for …, 2010
672010
Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics
N Gong, X Sun, H Jiang, KS Chang-Liao, Q Xia, TP Ma
Applied Physics Letters 112 (26), 262903, 2018
502018
GaSb molecular beam epitaxial growth on p-InP (001) and passivation with in situ deposited Al2O3 gate oxide
C Merckling, X Sun, A Alian, G Brammertz, VV Afanas’ev, TY Hoffmann, ...
Journal of Applied Physics 109, 073719, 2011
482011
Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs
X Sun, OI Saadat, J Chen, EX Zhang, S Cui, T Palacios, DM Fleetwood, ...
Nuclear Science, IEEE Transactions on 60 (6), 4074-4079, 2013
432013
Molecular beam deposition of Al2O3 on p-Ge (001)/Ge0. 95Sn0. 05 heterostructure and impact of a Ge-cap interfacial layer
C Merckling, X Sun, Y Shimura, A Franquet, B Vincent, S Takeuchi, ...
Applied Physics Letters 98, 192110, 2011
402011
Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices
LF Liu, JF Kang, N Xu, X Sun, C Chen, B Sun, Y Wang, XY Liu, X Zhang, ...
Japanese Journal of Applied Physics 47, 2701, 2008
342008
AC Transconductance Dispersion (ACGD): A Method to Profile Oxide Traps in MOSFETs Without Body Contact
X Sun, S Cui, A Alian, G Brammertz, C Merckling, D Lin, TP Ma
Electron Device Letters, IEEE 33 (3), 438-440, 2012
312012
Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors
IK Samsel, EX Zhang, NC Hooten, ED Funkhouser, WG Bennett, RA Reed, ...
IEEE Transactions on Nuclear Science 60 (6), 4439-4445, 2013
302013
Total ionizing dose (TID) effects in extremely scaled ultra-thin channel nanowire (NW) gate-all-around (GAA) InGaAs MOSFETs
S Ren, M Si, K Ni, X Wan, J Chen, S Chang, X Sun, EX Zhang, RA Reed, ...
IEEE Transactions on Nuclear Science 62 (6), 2888-2893, 2015
282015
Capacitor-based cross-point array for analog neural network with record symmetry and linearity
Y Li, S Kim, X Sun, P Solomon, T Gokmen, H Tsai, S Koswatta, Z Ren, ...
2018 IEEE Symposium on VLSI Technology, 25-26, 2018
272018
Dlfloat: A 16-b floating point format designed for deep learning training and inference
A Agrawal, SM Mueller, BM Fleischer, X Sun, N Wang, J Choi, ...
2019 IEEE 26th Symposium on Computer Arithmetic (ARITH), 92-95, 2019
252019
Circuitry for ferroelectric FET-based dynamic random access memory and non-volatile memory
X Sun, TP Ma
US Patent 10,127,964, 2018
222018
High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
X Sun, C D'Emic, CW Cheng, A Majumdar, Y Sun, E Cartier, RL Bruce, ...
2017 Symposium on VLSI Technology, T40-T41, 2017
192017
Effect of H on interface properties of Al2O3/In0. 53Ga0. 47As
Z Liu, S Cui, P Shekhter, X Sun, L Kornblum, J Yang, M Eizenberg, ...
Applied Physics Letters 99 (22), 222104-222104-3, 2011
192011
Ultra-low precision 4-bit training of deep neural networks
X Sun, N Wang, CY Chen, J Ni, A Agrawal, X Cui, S Venkataramani, ...
Advances in Neural Information Processing Systems 33, 2020
182020
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