| Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells K Muraki, S Fukatsu, Y Shiraki, R Ito Applied Physics Letters 61 (5), 557-559, 1992 | 605 | 1992 |
| Island formation during growth of Ge on Si (100): A study using photoluminescence spectroscopy H Sunamura, N Usami, Y Shiraki, S Fukatsu Applied Physics Letters 66 (22), 3024-3026, 1995 | 317 | 1995 |
| Self‐limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth S Fukatsu, K Fujita, H Yaguchi, Y Shiraki, R Ito Applied physics letters 59 (17), 2103-2105, 1991 | 257 | 1991 |
| MOVPE growth of cubic GaN on GaAs using dimethylhydrazine S Miyoshi, K Onabe, N Ohkouchi, H Yaguchi, R Ito, S Fukatsu, Y Shiraki Journal of crystal growth 124 (1-4), 439-442, 1992 | 210 | 1992 |
| Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot S Fukatsu, H Sunamura, Y Shiraki, S Komiyama Applied physics letters 71 (2), 258-260, 1997 | 147 | 1997 |
| Determination of quadratic nonlinear optical coefficient of AlxGa1−xAs system by the method of reflected second harmonics M Ohashi, T Kondo, R Ito, S Fukatsu, Y Shiraki, K Kumata, SS Kano Journal of applied physics 74 (1), 596-601, 1993 | 121 | 1993 |
| Growth mode transition and photoluminescence properties of Si1−xGex/Si quantum well structures with high Ge composition H Sunamura, Y Shiraki, S Fukatsu Applied physics letters 66 (8), 953-955, 1995 | 103 | 1995 |
| Realization of abrupt interfaces in Si/Ge superlattices by suppressing Ge surface segregation with submonolayer of Sb K Fujita, S Fukatsu, H Yaguchi, T Igarashi, Y Shiraki, R Ito Japanese journal of applied physics 29 (11A), L1981, 1990 | 99 | 1990 |
| Time‐resolved D‐band luminescence in strain‐relieved SiGe/Si S Fukatsu, Y Mera, M Inoue, K Maeda, H Akiyama, H Sakaki Applied physics letters 68 (14), 1889-1891, 1996 | 93 | 1996 |
| Surface segregation of In atoms and its influence on the quantized levels in InGaAs/GaAs quantum wells K Muraki, S Fukatsu, Y Shiraki, R Ito Journal of crystal growth 127 (1-4), 546-549, 1993 | 89 | 1993 |
| SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygen S Fukatsu, Y Ishikawa, T Saito, N Shibata Applied physics letters 72 (26), 3485-3487, 1998 | 88 | 1998 |
| Spectral blue shift of photoluminescence in strained‐layer Si1−xGex/Si quantum well structures grown by gas‐source Si molecular beam epitaxy S Fukatsu, H Yoshida, A Fujiwara, Y Takahashi, Y Shiraki, R Ito Applied physics letters 61 (7), 804-806, 1992 | 87 | 1992 |
| Optical anisotropy in wire‐geometry SiGe layers grown by gas‐source selective epitaxial growth technique N Usami, T Mine, S Fukatsu, Y Shiraki Applied physics letters 64 (9), 1126-1128, 1994 | 79 | 1994 |
| SiGe-on-insulator substrate using SiGe alloy grown Si (001) Y Ishikawa, N Shibata, S Fukatsu Applied physics letters 75 (7), 983-985, 1999 | 66 | 1999 |
| Enhancement of radiative recombination in Si‐based quantum wells with neighboring confinement structure N Usami, F Issiki, DK Nayak, Y Shiraki, S Fukatsu Applied physics letters 67 (4), 524-526, 1995 | 64 | 1995 |
| Observation of deep‐level‐free band edge luminescence and quantum confinement in strained Si1−xGex/Si single quantum well structures grown by solid … N Usami, S Fukatsu, Y Shiraki Applied physics letters 61 (14), 1706-1708, 1992 | 63 | 1992 |
| Band‐edge photoluminescence of SiGe/strained‐Si/SiGe type‐II quantum wells on Si (100) DK Nayak, N Usami, S Fukatsu, Y Shiraki Applied physics letters 63 (25), 3509-3511, 1993 | 59 | 1993 |
| Realization of crescent‐shaped SiGe quantum wire structures on a V‐groove patterned Si substrate by gas‐source Si molecular beam epitaxy N Usami, T Mine, S Fukatsu, Y Shiraki Applied physics letters 63 (20), 2789-2791, 1993 | 59 | 1993 |
| Involvement of the topmost Ge layer in the Ge surface segregation during Si/Ge heterostructure formation K Fujita, S Fukatsu, H Yaguchi, Y Shiraki, R Ito Applied physics letters 59 (18), 2240-2241, 1991 | 58 | 1991 |
| Luminescence study on interdiffusion in strained Si1−xGex/Si single quantum wells grown by molecular beam epitaxy H Sunamura, S Fukatsu, N Usami, Y Shiraki Applied Physics Letters 63 (12), 1651-1653, 1993 | 57 | 1993 |
