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Renata Butkute
Renata Butkute
Senior Researcher, Center for Physical Sciences and Technology, Vilnius, Lithuania
Zweryfikowany adres z ftmc.lt
Tytuł
Cytowane przez
Cytowane przez
Rok
Effect of strains on electrical and optical properties of thin La 0.67 Ca0. 33MnO3 films
B Vengalis, A Maneikis, F Anisimovas, R Butkut, L Dapkus, A Kindurys
Journal of magnetism and magnetic materials 211 (1-3), 35-40, 2000
782000
Transparent p-type ZnO films obtained by oxidation of sputter-deposited Zn3N2
E Kaminska, A Piotrowska, J Kossut, A Barcz, R Butkute, W Dobrowolski, ...
Solid state communications 135 (1-2), 11-15, 2005
682005
Magnetoresistant La1− xSrxMnO3 films by pulsed injection metal organic chemical vapor deposition: effect of deposition conditions, substrate material and film thickness
A Abrutis, V Plausinaitiene, V Kubilius, A Teiserskis, Z Saltyte, R Butkute, ...
Thin Solid Films 413 (1-2), 32-40, 2002
662002
Multi‐quantum well Ga (AsBi)/GaAs laser diodes with more than 6% of bismuth
R Butkutė, A Geižutis, V Pačebutas, B Čechavičius, V Bukauskas, ...
Electronics letters 50 (16), 1155-1157, 2014
562014
Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers
IP Marko, SR Jin, K Hild, Z Batool, ZL Bushell, P Ludewig, W Stolz, K Volz, ...
Semiconductor Science and Technology 30 (9), 094008, 2015
442015
Structure and optical properties of InGaAsBi with up to 7% bismuth
J Devenson, V Pačebutas, R Butkutė, A Baranov, A Krotkus
Applied Physics Express 5 (1), 015503, 2012
442012
p‐type conducting ZnO: fabrication and characterisation
E Kaminska, A Piotrowska, J Kossut, R Butkutė, W Dobrowolski, ...
physica status solidi (c) 2 (3), 1119-1124, 2005
332005
Bismuth quantum dots in annealed GaAsBi/AlAs quantum wells
R Butkutė, G Niaura, E Pozingytė, B Čechavičius, A Selskis, M Skapas, ...
Nanoscale research letters 12, 1-7, 2017
292017
Terahertz pulse generation from (111)-cut InSb and InAs crystals when illuminated by 1.55-μm femtosecond laser pulses
I Nevinskas, K Vizbaras, A Trinkūnas, R Butkutė, A Krotkus
Optics Letters 42 (13), 2615-2618, 2017
222017
Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers
S Pūkienė, M Karaliūnas, A Jasinskas, E Dudutienė, B Čechavičius, ...
Nanotechnology 30 (45), 455001, 2019
212019
Photoluminescence at up to 2.4 μm wavelengths from GaInAsBi/AlInAs quantum wells
R Butkutė, V Pačebutas, B Čechavičius, R Nedzinskas, A Selskis, ...
Journal of crystal growth 391, 116-120, 2014
202014
Preparation and characterization of hexagonal MnTe and ZnO layers
E Przeździecka, E Kamińska, E Dynowska, R Butkutė, W Dobrowolski, ...
physica status solidi (c) 2 (3), 1218-1223, 2005
202005
Spin-polarized quasiparticle injection effect in MOCVD-grown YBa2Cu3O7/SrTiO3/La1− xSrxMnO3 heterostructures
V Plausinaitiene, A Abrutis, B Vengalis, R Butkute, JP Senateur, Z Saltyte, ...
Physica C: Superconductivity 351 (1), 13-16, 2001
202001
Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys
T Paulauskas, V Pačebutas, R Butkutė, B Čechavičius, A Naujokaitis, ...
Nanoscale Research Letters 15, 1-12, 2020
182020
Photoluminescence investigation of GaAs1− xBix/GaAs heterostructures
V Pačebutas, R Butkutė, B Čechavičius, J Kavaliauskas, A Krotkus
Thin Solid Films 520 (20), 6415-6418, 2012
182012
Thermal annealing effect on the properties of GaBiAs
R Butkutė, V Pačebutas, B Čechavičius, R Adomavičius, A Koroliov, ...
physica status solidi c 9 (7), 1614-1616, 2012
182012
Bismuth quantum dots and strong infrared photoluminescence in migration-enhanced epitaxy grown GaAsBi-based structures
R Butkutė, K Stašys, V Pačebutas, B Čechavičius, R Kondrotas, A Geižutis, ...
Optical and Quantum Electronics 47 (4), 873-882, 2015
172015
p-type conducting ZnO: fabrication and characterization
E Kamińska, A Piotrowska, J Kossut, R Butkutė, W Dobrowolski, ...
Phys Stat Sol 2 (3), 1119-1124, 2005
172005
Growth and Investigation of Heterostructures Based on Multiferroic
B Vengalis, J Devenson, A Oginskis, R Butkutė, A Maneikis, ...
Acta Physica Polonica A 113 (3), 1095-1098, 2008
152008
InGaAs diodes for terahertz sensing—Effect of molecular beam epitaxy growth conditions
V Palenskis, L Minkevičius, J Matukas, D Jokubauskis, S Pralgauskaitė, ...
Sensors 18 (11), 3760, 2018
142018
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