A review of Ga2O3 materials, processing, and devices SJ Pearton, J Yang, PH Cary, F Ren, J Kim, MJ Tadjer, MA Mastro
Applied Physics Reviews 5 (1), 2018
2273 2018 Wide band gap ferromagnetic semiconductors and oxides SJ Pearton, CR Abernathy, ME Overberg, GT Thaler, DP Norton, ...
Journal of Applied Physics 93 (1), 1-13, 2003
1213 2003 Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS SJ Pearton, F Ren, M Tadjer, J Kim
Journal of Applied Physics 124 (22), 2018
536 2018 Magnetic properties of n -GaMnN thin films GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 80 (21), 3964-3966, 2002
451 2002 Perspective—opportunities and future directions for Ga2O3 MA Mastro, A Kuramata, J Calkins, J Kim, F Ren, SJ Pearton
ECS Journal of Solid State Science and Technology 6 (5), P356, 2017
447 2017 Graphene-based nitrogen dioxide gas sensors G Ko, HY Kim, J Ahn, YM Park, KY Lee, J Kim
Current Applied Physics 10 (4), 1002-1004, 2010
400 2010 Solid-State Electron LW Wu, SJ Chang, YK Su, RW Chuang, YP Hsu, CH Kuo, WC Lai, ...
Solid-State Electron 13, 239, 1970
289 * 1970 High Responsivity β-Ga2 O3 Metal–Semiconductor–Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes S Oh, CK Kim, J Kim
Acs Photonics 5 (3), 1123-1128, 2017
237 2017 Review of radiation damage in GaN-based materials and devices SJ Pearton, R Deist, F Ren, L Liu, AY Polyakov, J Kim
Journal of Vacuum Science & Technology A 31 (5), 2013
232 2013 Influence of MgO and B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ...
Applied Physics Letters 80 (9), 1661-1663, 2002
222 2002 Radiation effects in GaN materials and devices AY Polyakov, SJ Pearton, P Frenzer, F Ren, L Liu, J Kim
Journal of Materials Chemistry C 1 (5), 877-887, 2013
212 2013 Radiation damage effects in Ga 2 O 3 materials and devices J Kim, SJ Pearton, C Fares, J Yang, F Ren, S Kim, AY Polyakov
Journal of Materials Chemistry C 7 (1), 10-24, 2019
198 2019 High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3 J Yang, S Ahn, F Ren, SJ Pearton, S Jang, J Kim, A Kuramata
Applied Physics Letters 110 (19), 2017
194 2017 AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using R Mehandru, B Luo, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied physics letters 82 (15), 2530-2532, 2003
175 2003 Exfoliated β-Ga 2 O 3 nano-belt field-effect transistors for air-stable high power and high temperature electronics J Kim, S Oh, MA Mastro, J Kim
Physical Chemistry Chemical Physics 18 (23), 15760-15764, 2016
168 2016 Flexible graphene-based chemical sensors on paper substrates G Yang, C Lee, J Kim, F Ren, SJ Pearton
Physical Chemistry Chemical Physics 15 (6), 1798-1801, 2013
161 2013 Y Irokawa, Y Nakano, M Ishiko, T Kachi, J Kim, F Ren, BP Gila, ...
Applied physics letters 84 (15), 2919-2921, 2004
137 2004 Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity S Oh, J Kim, F Ren, SJ Pearton, J Kim
Journal of Materials Chemistry C 4 (39), 9245-9250, 2016
130 2016 Defect-engineered graphene chemical sensors with ultrahigh sensitivity G Lee, G Yang, A Cho, JW Han, J Kim
Physical Chemistry Chemical Physics 18 (21), 14198-14204, 2016
126 2016 Characteristics of MgO/GaN gate-controlled metal–oxide–semiconductor diodes J Kim, R Mehandru, B Luo, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied Physics Letters 80 (24), 4555-4557, 2002
126 2002 
Stephen PeartonProfessor of Materials Science and Engineering, University of FloridaZweryfikowany adres z mse.ufl.edu
