Follow
Toru Tanzawa
Toru Tanzawa
Professor, Waseda university, IEEE Fellow
Verified email at ieee.org - Homepage
Title
Cited by
Cited by
Year
A CMOS bandgap reference circuit with sub-1-V operation
H Banba, H Shiga, A Umezawa, T Miyaba, T Tanzawa, S Atsumi, K Sakui
IEEE Journal of Solid-State Circuits 34 (5), 670-674, 1999
12681999
Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state
T Endoh, Y Tanaka, S Aritome, R Shirota, S Shuto, T Tanaka, G Hemink, ...
US Patent 5,774,397, 1998
6741998
A dynamic analysis of the Dickson charge pump circuit
T Tanzawa, T Tanaka
IEEE Journal of solid-state circuits 32 (8), 1231-1240, 1997
5181997
A multipage cell architecture for high-speed programming multilevel NAND flash memories
K Takeuchi, T Tanaka, T Tanzawa
IEEE Journal of Solid-State Circuits 33 (8), 1228-1238, 1998
2341998
Circuit techniques for a 1.8-V-only NAND flash memory
T Tanzawa, T Tanaka, K Takeuchi, H Nakamura
IEEE Journal of Solid-State Circuits 37 (1), 84-89, 2002
1652002
Non-volatile semiconductor memory device
T Endoh, Y Tanaka, S Aritome, R Shirota, S Shuto, T Tanaka, G Hemink, ...
US Patent 5,555,204, 1996
1471996
7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory
T Tanaka, M Helm, T Vali, R Ghodsi, K Kawai, JK Park, S Yamada, F Pan, ...
2016 IEEE International Solid-State Circuits Conference (ISSCC), 142-144, 2016
1412016
Nonvolatile semiconductor memory device capable of controlling mutual timing of write voltage pulse and transfer voltage pulse
S Satoh, R Shirota, T Tanzawa
US Patent 6,252,798, 2001
1262001
Optimization of word-line booster circuits for low-voltage flash memories
T Tanzawa, S Atsumi
IEEE Journal of Solid-State Circuits 34 (8), 1091-1098, 1999
1191999
Semiconductor memory device
T Tanaka, H Nakamura, T Tanzawa
US Patent 6,525,964, 2003
1122003
Non-volatile semiconductor memory device
Y Takano, T Taura, T Tanzawa
US Patent 6,639,837, 2003
1082003
A compact on-chip ECC for low cost flash memories
T Tanzawa, T Tanaka, K Takeuchi, R Shirota, S Aritome, H Watanabe, ...
IEEE Journal of Solid-State Circuits 32 (5), 662-669, 1997
1081997
Method and apparatus for generating temperature-compensated read and verify operations in flash memories
T Tanzawa
US Patent 7,277,355, 2007
1022007
Flash memory
T Tanaka, N Shibata, T Tanzawa
US Patent 7,219,285, 2007
992007
Flash memory
T Tanaka, N Shibata, T Tanzawa
US Patent 7,509,566, 2009
952009
Nonvolatile semiconductor memory device
T Tanaka, K Ohuchi, T Tanzawa, K Takeuchi
US Patent 6,545,909, 2003
942003
Quantum tunneling effect device and semiconductor composite substrate
H Watanabe, N Yasuda, A Toriumi, T Tanaka, T Tanzawa
US Patent 6,320,220, 2001
922001
Method and apparatus for generating temperature-compensated read and verify operations in flash memories
T Tanzawa
US Patent 7,957,215, 2011
902011
Non-volatile semiconductor memory device
T Endoh, Y Tanaka, S Aritome, R Shirota, S Shuto, T Tanaka, G Hemink, ...
US Patent 5,946,231, 1999
861999
Nonvolatile semiconductor memory device
T Tanaka, K Ohuchi, T Tanzawa, K Takeuchi
US Patent 6,363,010, 2002
822002
The system can't perform the operation now. Try again later.
Articles 1–20