Michał Leszczynski
Michał Leszczynski
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Zweryfikowany adres z unipress.waw.pl
TytułCytowane przezRok
Observation of native Ga vacancies in GaN by positron annihilation
K Saarinen, T Laine, S Kuisma, J Nissilä, P Hautojärvi, L Dobrzynski, ...
MRS Online Proceedings Library Archive 482, 1997
5051997
Lattice parameters of gallium nitride
M Leszczynski, H Teisseyre, T Suski, I Grzegory, M Bockowski, J Jun, ...
Applied Physics Letters 69 (1), 73-75, 1996
4351996
Towards the identification of the dominant donor in GaN
P Perlin, T Suski, H Teisseyre, M Leszczynski, I Grzegory, J Jun, ...
Physical review letters 75 (2), 296, 1995
3631995
Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films
K Kornitzer, T Ebner, K Thonke, R Sauer, C Kirchner, V Schwegler, ...
Physical Review B 60 (3), 1471, 1999
2811999
Mechanism of yellow luminescence in GaN
T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ...
Applied physics letters 67 (15), 2188-2190, 1995
2411995
Thermal expansion of gallium nitride
M Leszczynski, T Suski, H Teisseyre, P Perlin, I Grzegory, J Jun, ...
Journal of applied physics 76 (8), 4909-4911, 1994
2411994
Phonon dispersion curves in wurtzite-structure GaN determined by inelastic x-ray scattering
T Ruf, J Serrano, M Cardona, P Pavone, M Pabst, M Krisch, M D'astuto, ...
Physical review letters 86 (5), 906, 2001
1712001
Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal
R Nowak, M Pessa, M Suganuma, M Leszczynski, I Grzegory, S Porowski, ...
Applied Physics Letters 75 (14), 2070-2072, 1999
1451999
Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers
J Oila, V Ranki, J Kivioja, K Saarinen, P Hautojärvi, J Likonen, ...
Physical Review B 63 (4), 045205, 2001
1162001
Lattice constants, thermal expansion and compressibility of gallium nitride
M Leszczynski, T Suski, P Perlin, H Teisseyre, I Grzegory, M Bockowski, ...
Journal of Physics D: Applied Physics 28 (4A), A149, 1995
951995
Visible light communications using a directly modulated 422 nm GaN laser diode
S Watson, M Tan, SP Najda, P Perlin, M Leszczynski, G Targowski, ...
Optics letters 38 (19), 3792-3794, 2013
932013
Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals
L Marona, P Wisniewski, P Prystawko, I Grzegory, T Suski, S Porowski, ...
Applied physics letters 88 (20), 201111, 2006
912006
Blue-violet laser diodes grown on bulk substrates by plasma-assisted molecular-beam epitaxy
C Skierbiszewski, ZR Wasilewski, M Siekacz, A Feduniewicz, P Perlin, ...
Applied Physics Letters 86 (1), 011114, 2005
872005
GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates
M Asif Khan, JW Yang, W Knap, E Frayssinet, X Hu, G Simin, P Prystawko, ...
Applied Physics Letters 76 (25), 3807-3809, 2000
822000
Evidence for localized Si-donor state and its metastable properties in AlGaN
C Skierbiszewski, T Suski, M Leszczynski, M Shin, M Skowronski, ...
Applied physics letters 74 (25), 3833-3835, 1999
781999
The microstructure of gallium nitride monocrystals grown at high pressure
M Leszczynski, I Grzegory, H Teisseyre, T Suski, M Bockowski, J Jun, ...
Journal of crystal growth 169 (2), 235-242, 1996
731996
Method of fabrication of highly resistive GaN bulk crystals
S Porowski, M Bockowski, I Grzegory, S Krukowski, M Leszczynski, ...
US Patent 6,273,948, 2001
712001
continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy
C Skierbiszewski, P Wiśniewski, M Siekacz, P Perlin, ...
Applied physics letters 88 (22), 221108, 2006
702006
High‐Resolution Photoluminescence and Reflectance Spectra of Homoepitaxial GaN Layers
K Kornitzer, T Ebner, M Grehl, K Thonke, R Sauer, C Kirchner, ...
physica status solidi (b) 216 (1), 5-9, 1999
631999
Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology
C Kirchner, V Schwegler, F Eberhard, M Kamp, KJ Ebeling, K Kornitzer, ...
Applied physics letters 75 (8), 1098-1100, 1999
631999
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