30-W/mm GaN HEMTs by field plate optimization YF Wu, A Saxler, M Moore, RP Smith, S Sheppard, PM Chavarkar, ...
IEEE Electron Device Letters 25 (3), 117-119, 2004
1218 2004 40-W/mm double field-plated GaN HEMTs YF Wu, M Moore, A Saxler, T Wisleder, P Parikh
2006 64th device research conference, 151-152, 2006
381 2006 Heavy doping effects in Mg-doped GaN P Kozodoy, H Xing, SP DenBaars, UK Mishra, A Saxler, R Perrin, ...
Journal of Applied Physics 87 (4), 1832-1835, 2000
372 2000 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses AW Saxler, RP Smith, ST Sheppard
US Patent 6,982,204, 2006
258 2006 AlGaN ultraviolet photoconductors grown on sapphire D Walker, X Zhang, P Kung, A Saxler, S Javadpour, J Xu, M Razeghi
Applied Physics Letters 68 (15), 2100-2101, 1996
244 1996 High quality AIN and GaN epilayers grown on (00⋅ 1) sapphire,(100), and (111) silicon substrates P Kung, A Saxler, X Zhang, D Walker, TC Wang, I Ferguson, M Razeghi
Applied physics letters 66 (22), 2958-2960, 1995
237 1995 Strain balanced nitride heterojunction transistors AW Saxler
US Patent 7,030,428, 2006
233 2006 Methods of fabricating nitride-based transistors having regrown ohmic contact regions AW Saxler, RP Smith
US Patent 7,432,142, 2008
203 2008 Polarization-enhanced Mg doping of AlGaN/GaN superlattices P Kozodoy, YP Smorchkova, M Hansen, H Xing, SP DenBaars, UK Mishra, ...
Applied Physics Letters 75 (16), 2444-2446, 1999
190 1999 Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same AW Saxler
US Patent 7,170,111, 2007
170 2007 Visible blind GaN p-i-n photodiodes D Walker, A Saxler, P Kung, X Zhang, M Hamilton, J Diaz, M Razeghi
Applied physics letters 72 (25), 3303-3305, 1998
156 1998 ⩽ D Walker, X Zhang, A Saxler, P Kung, J Xu, M Razeghi
Applied physics letters 70 (8), 949-951, 1997
153 1997 Binary group III-nitride based high electron mobility transistors AW Saxler
US Patent 7,544,963, 2009
152 2009 Determination of the band-gap energy of KS Kim, A Saxler, P Kung, M Razeghi, KY Lim
Applied physics letters 71 (6), 800-802, 1997
149 1997 Growth of Alx 1−x N:Ge on sapphire and silicon substrates X Zhang, P Kung, A Saxler, D Walker, TC Wang, M Razeghi
Applied physics letters 67 (12), 1745-1747, 1995
138 1995 Transistors having buried n-type and p-type regions beneath the source region AW Saxler, S Sheppard, RP Smith
US Patent 7,456,443, 2008
135 2008 Photovoltaic effects in GaN structures with p ‐n junctions X Zhang, P Kung, D Walker, J Piotrowski, A Rogalski, A Saxler, ...
Applied physics letters 67 (14), 2028-2030, 1995
127 1995 High quality aluminum nitride epitaxial layers grown on sapphire substrates A Saxler, P Kung, CJ Sun, E Bigan, M Razeghi
Applied physics letters 64 (3), 339-341, 1994
126 1994 Ionization energies and electron mobilities in phosphorus-and nitrogen-implanted 4H-silicon carbide MA Capano, JA Cooper Jr, MR Melloch, A Saxler, WC Mitchel
Journal of Applied Physics 87 (12), 8773-8777, 2000
125 2000 Aluminum free group III-nitride based high electron mobility transistors AW Saxler
US Patent 7,615,774, 2009
123 2009 
Manijeh RazeghiNorthwestern UniversityZweryfikowany adres z eecs.northwestern.edu
