Adam Saxler
Adam Saxler
Zweryfikowany adres z micron.com
Tytuł
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30-W/mm GaN HEMTs by field plate optimization
YF Wu, A Saxler, M Moore, RP Smith, S Sheppard, PM Chavarkar, ...
IEEE Electron Device Letters 25 (3), 117-119, 2004
11652004
Heavy doping effects in Mg-doped GaN
P Kozodoy, H Xing, SP DenBaars, UK Mishra, A Saxler, R Perrin, ...
Journal of Applied Physics 87 (4), 1832-1835, 2000
3512000
40-W/mm double field-plated GaN HEMTs
YF Wu, M Moore, A Saxler, T Wisleder, P Parikh
2006 64th device research conference, 151-152, 2006
3492006
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
AW Saxler, RP Smith, ST Sheppard
US Patent 6,982,204, 2006
2522006
AlGaN ultraviolet photoconductors grown on sapphire
D Walker, X Zhang, P Kung, A Saxler, S Javadpour, J Xu, M Razeghi
Applied Physics Letters 68 (15), 2100-2101, 1996
2401996
High quality AIN and GaN epilayers grown on (00⋅ 1) sapphire,(100), and (111) silicon substrates
P Kung, A Saxler, X Zhang, D Walker, TC Wang, I Ferguson, M Razeghi
Applied physics letters 66 (22), 2958-2960, 1995
2321995
Strain balanced nitride heterojunction transistors
AW Saxler
US Patent 7,030,428, 2006
2272006
Methods of fabricating nitride-based transistors having regrown ohmic contact regions
AW Saxler, RP Smith
US Patent 7,432,142, 2008
2012008
Polarization-enhanced Mg doping of AlGaN/GaN superlattices
P Kozodoy, YP Smorchkova, M Hansen, H Xing, SP DenBaars, UK Mishra, ...
Applied Physics Letters 75 (16), 2444-2446, 1999
1751999
Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
AW Saxler
US Patent 7,170,111, 2007
1682007
(0) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition
D Walker, X Zhang, A Saxler, P Kung, J Xu, M Razeghi
Applied physics letters 70 (8), 949-951, 1997
1571997
Visible blind GaN p-i-n photodiodes
D Walker, A Saxler, P Kung, X Zhang, M Hamilton, J Diaz, M Razeghi
Applied physics letters 72 (25), 3303-3305, 1998
1561998
Binary group III-nitride based high electron mobility transistors
AW Saxler
US Patent 7,544,963, 2009
1492009
Determination of the band-gap energy of grown by metal–organic chemical-vapor deposition
KS Kim, A Saxler, P Kung, M Razeghi, KY Lim
Applied physics letters 71 (6), 800-802, 1997
1441997
Growth of AlxGa1−xN:Ge on sapphire and silicon substrates
X Zhang, P Kung, A Saxler, D Walker, TC Wang, M Razeghi
Applied physics letters 67 (12), 1745-1747, 1995
1371995
Transistors having buried n-type and p-type regions beneath the source region
AW Saxler, S Sheppard, RP Smith
US Patent 7,456,443, 2008
1332008
Photovoltaic effects in GaN structures with pn junctions
X Zhang, P Kung, D Walker, J Piotrowski, A Rogalski, A Saxler, ...
Applied physics letters 67 (14), 2028-2030, 1995
1311995
High quality aluminum nitride epitaxial layers grown on sapphire substrates
A Saxler, P Kung, CJ Sun, E Bigan, M Razeghi
Applied physics letters 64 (3), 339-341, 1994
1261994
Aluminum free group III-nitride based high electron mobility transistors
AW Saxler
US Patent 7,615,774, 2009
1232009
Ionization energies and electron mobilities in phosphorus-and nitrogen-implanted 4H-silicon carbide
MA Capano, JA Cooper Jr, MR Melloch, A Saxler, WC Mitchel
Journal of Applied Physics 87 (12), 8773-8777, 2000
1192000
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