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Adam Saxler
Adam Saxler
Micron
Zweryfikowany adres z micron.com
Tytuł
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30-W/mm GaN HEMTs by field plate optimization
YF Wu, A Saxler, M Moore, RP Smith, S Sheppard, PM Chavarkar, ...
IEEE Electron Device Letters 25 (3), 117-119, 2004
13962004
Heavy doping effects in Mg-doped GaN
P Kozodoy, H Xing, SP DenBaars, UK Mishra, A Saxler, R Perrin, ...
Journal of Applied Physics 87 (4), 1832-1835, 2000
4812000
40-W/mm double field-plated GaN HEMTs
YF Wu, M Moore, A Saxler, T Wisleder, P Parikh
2006 64th device research conference, 151-152, 2006
4542006
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
AW Saxler, RP Smith, ST Sheppard
US Patent 6,982,204, 2006
2762006
Strain balanced nitride heterojunction transistors
AW Saxler
US Patent 7,030,428, 2006
2562006
AlGaN ultraviolet photoconductors grown on sapphire
D Walker, X Zhang, P Kung, A Saxler, S Javadpour, J Xu, M Razeghi
Applied Physics Letters 68 (15), 2100-2101, 1996
2561996
High quality AIN and GaN epilayers grown on (00⋅ 1) sapphire,(100), and (111) silicon substrates
P Kung, A Saxler, X Zhang, D Walker, TC Wang, I Ferguson, M Razeghi
Applied Physics Letters 66 (22), 2958-2960, 1995
2531995
Polarization-enhanced Mg doping of AlGaN/GaN superlattices
P Kozodoy, YP Smorchkova, M Hansen, H Xing, SP DenBaars, UK Mishra, ...
Applied Physics Letters 75 (16), 2444-2446, 1999
2281999
Methods of fabricating nitride-based transistors having regrown ohmic contact regions
AW Saxler, RP Smith
US Patent 7,432,142, 2008
2122008
Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
AW Saxler
US Patent 7,170,111, 2007
1792007
Integrated nitride and silicon carbide-based devices
ST Sheppard, AW Saxler, T Smith
US Patent 7,875,910, 2011
1762011
Binary group III-nitride based high electron mobility transistors
AW Saxler
US Patent 7,544,963, 2009
1712009
Visible blind GaN p-i-n photodiodes
D Walker, A Saxler, P Kung, X Zhang, M Hamilton, J Diaz, M Razeghi
Applied physics letters 72 (25), 3303-3305, 1998
1681998
Determination of the band-gap energy of Al1-xInxN grown by metal-organic chemical-vapor deposition
KS Kim, A Saxler, P Kung, M Razeghi, KY Lim
Applied physics letters 71 (6), 800-802, 1997
1621997
(0⩽) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition
D Walker, X Zhang, A Saxler, P Kung, J Xu, M Razeghi
Applied Physics Letters 70 (8), 949-951, 1997
1621997
Growth of AlxGa1−xN:Ge on sapphire and silicon substrates
X Zhang, P Kung, A Saxler, D Walker, TC Wang, M Razeghi
Applied physics letters 67 (12), 1745-1747, 1995
1511995
Transistors having buried n-type and p-type regions beneath the source region
AW Saxler, S Sheppard, RP Smith
US Patent 7,456,443, 2008
1482008
A crystallographic model of (00⋅ 1) aluminum nitride epitaxial thin film growth on (00⋅ 1) sapphire substrate
CJ Sun, P Kung, A Saxler, H Ohsato, K Haritos, M Razeghi
Journal of applied physics 75 (8), 3964-3967, 1994
1461994
Ionization energies and electron mobilities in phosphorus-and nitrogen-implanted 4H-silicon carbide
MA Capano, JA Cooper Jr, MR Melloch, A Saxler, WC Mitchel
Journal of Applied Physics 87 (12), 8773-8777, 2000
1442000
Aluminum free group III-nitride based high electron mobility transistors
AW Saxler
US Patent 7,615,774, 2009
1402009
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