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Sanja ®onja
Sanja ®onja
University of Zagreb, Faculty of Electrical Engineering and Computing
Zweryfikowany adres z fer.hr
Tytuł
Cytowane przez
Cytowane przez
Rok
Silicon nanocrystals by thermal annealing of Si-rich silicon oxide prepared by the LPCVD method
M Ivanda, H Gebavi, D Ristić, K Furić, S Musić, M Ristić, S ®onja, ...
Journal of molecular structure 834, 461-464, 2007
172007
Transport properties of the YbAl3 compound: On the energy scales of YbAl3 from thermopower data
M Očko, S ®onja, I Aviani, ED Bauer, JL Sarrao
Journal of alloys and compounds 509 (25), 6999-7003, 2011
122011
Thermoelectric materials: problems and perspectives
M Očko, S ®onja, M Ivanda
The 33rd International Convention MIPRO, 16-21, 2010
102010
Investigations of the disorder in the TaxN thin films: On the first order Raman spectrum of the rock salt crystal structure
M Očko, S ®onja, K Salamon, M Ivanda, L Yu, N Newman
Journal of applied physics 114 (4), 2013
62013
Low temperature resistivity of heavily boron doped LPVCD polysilicon thin films
S ®onja, M Očko, M Ivanda, P Biljanović
Journal of Physics D: Applied Physics 41 (16), 162002, 2008
62008
Low-temperature transport properties of TaxN thin films (0.72⩽ x⩽ 0.83)
M Očko, S ®onja, GL Nelson, JK Freericks, L Yu, N Newman
Journal of Physics D: Applied Physics 43 (44), 445405, 2010
52010
Structural and electronic properties of the highly concentrated UxY1− xRu2Si2 alloy system
M Očko, Z Samardľija, S ®onja, I Aviani
Journal of alloys and compounds 512 (1), 79-84, 2012
32012
Grain growth from amorphous phase
M Očko, S ®onja, M Ivanda
AIP Advances 4 (3), 2014
22014
Electrical activation of phosphorus by rapid thermal annealing of doped amorphous silicon films
S ®onja, M Ivanda, M Očko, P Biljanović, T Suligoj, M Koričić, H Mochizuki, ...
32nd International Convention MIPRO 2009, 46-51, 2009
22009
Structural and electronic properties of heavily phosphorus doped polycrystalline silicon thin films
S ®onja, M Ivanda, M Očko, T Suligoj, M Končić, P Biljanović
2011 Proceedings of the 34th International Convention MIPRO, 33-38, 2011
12011
Low temperature resistivity of heavily boron doped LPVCD polysilicon thin films
S Zonja, P Biljanovic, M Ocko, M Ivanda
Journal of Physics. D, Applied Physics 41, 2008
12008
Low pressure chemical vapour deposition of heavily boron doped polycrystalline silicon thin films: preparation and characterizations
S ®onja, M Ivanda, M Očko, P Biljanović, K Furić
31th International Convention, MIPRO 2008, 38-42, 2008
12008
Low Pressure Chemical Vapor Deposition of Different Silicon Nanostructures
M Ivanda, H Gebavi, D Ristic, K Furic, S Music, M Ristic, S Zonja, ...
International Convention MIPRO 29; 2006), 27-32, 2006
12006
Impact of microstrip width and annealing time on the characteristics of micro-scale graphene FETs
M Poljak, M Wang, S ®onja, V Derek, M Ivanda, KL Wang, T Suligoj
2014 37th International Convention on Information and Communication …, 2014
2014
PureB layers–XRD measurements and temperature characteristics
T Suligoj, K Tihomir, M Poljak, S ®onja, J ®ilak
2014
Design of a scalable model of GaN devices
T Suligoj, M Koričić, M Poljak, S ®onja, T Kneľević, J ®ilak
2014
Investigations of the disorder in the TaxN thin films
M Očko, S ®onja, K Salamon, M Ivanda, L Yu, N Newman
Journal of Applied Physics 114 (4), 2013
2013
Analiza strukture, elektronskih i transportnih svojstava visokodopiranih polikristalnih silicijskih tankih filmova
S ®onja
University of Zagreb. Faculty of Electrical Engineering and Computing …, 2013
2013
Some physical problems in the preparation and analysis of the heavily boron and phosphorous doped polysilicon thin films
M Očko, S ®onja, M Ivanda
2013 36th International Convention on Information and Communication …, 2013
2013
Elektronika 1-Laboratorijske vjeľbe
M Koričić, M Kriľan, I Krois, T Mandić, M Poljak, S ®onja
2013
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