Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy JD Cressler, S Monfray, G Freeman, D Friedman, DJ Paul, S Tsujino, ...
CRC press, 2018
297 2018 Surface electronic structure of Si (111) 7× 7-Ge and Si (111) 5× 5-Ge studied with photoemission and inverse photoemission P Martensson, WX Ni, GV Hansson, JM Nicholls, B Reihl
Physical Review B 36 (11), 5974, 1987
124 1987 Observation of a charge transfer state in low‐bandgap polymer/fullerene blend systems by photoluminescence and electroluminescence studies Y Zhou, K Tvingstedt, F Zhang, C Du, WX Ni, MR Andersson, O Inganäs
Advanced Functional Materials 19 (20), 3293-3299, 2009
100 2009 Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si (100) films by molecular-beam epitaxy WX Ni, J Knall, MA Hasan, GV Hansson, JE Sundgren, SA Barnett, ...
Physical Review B 40 (15), 10449, 1989
100 1989 Synthesis design of artificial magnetic metamaterials using a genetic algorithm PY Chen, CH Chen, H Wang, JH Tsai, WX Ni
Optics express 16 (17), 12806-12818, 2008
99 2008 Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer JM Shieh, YF Lai, WX Ni, HC Kuo, CY Fang, JY Huang, CL Pan
Applied physics letters 90 (5), 2007
84 2007 New method to study band offsets applied to strained heterojunction interfaces WX Ni, J Knall, GV Hansson
Physical Review B 36 (14), 7744, 1987
73 1987 Fabrication and characterisation of Si-Si0. 7Ge0. 3 quantum dot light emitting diodes YS Tang, WX Ni, CMS Torres, GV Hansson
Electronics Letters 31 (16), 1385-1386, 1995
66 1995 SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3–1.55 μm A Elfving, GV Hansson, WX Ni
Physica E: Low-dimensional Systems and Nanostructures 16 (3-4), 528-532, 2003
63 2003 Residual strain in GaN epilayers grown on sapphire and (6H) SiC substrates W Li, WX Ni
Applied physics letters 68 (19), 2705-2707, 1996
63 1996 n ‐Si/p ‐Si1−x Gex /n ‐Si double‐heterojunction bipolar transistorsDX Xu, GD Shen, M Willander, WX Ni, GV Hansson
Applied physics letters 52 (26), 2239-2241, 1988
60 1988 δ-function-shaped Sb-doping profiles in Si (001) obtained using a low-energy accelerated-ion source during molecular-beam epitaxy WX Ni, GV Hansson, JE Sundgren, L Hultman, LR Wallenberg, JY Yao, ...
Physical Review B 46 (12), 7551, 1992
55 1992 Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 μm light emission WX Ni, KB Joelsson, CX Du, IA Buyanova, G Pozina, WM Chen, ...
Applied physics letters 70 (25), 3383-3385, 1997
54 1997 X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (⩽ 100 nm) using a low temperature growth step WX Ni, K Lyutovich, J Alami, C Tengstedt, M Bauer, E Kasper
Journal of crystal growth 227, 756-760, 2001
51 2001 Spatially direct and indirect transitions observed for Si/Ge quantum dots M Larsson, A Elfving, PO Holtz, GV Hansson, WX Ni
Applied physics letters 82 (26), 4785-4787, 2003
49 2003 Electrical properties of Si films doped with 200‐eV In+ ions during growth by molecular‐beam epitaxy JP Noël, N Hirashita, LC Markert, YW Kim, JE Greene, J Knall, WX Ni, ...
Journal of applied physics 65 (3), 1189-1197, 1989
48 1989 Growth-temperature-dependent band alignment in quantum dots from photoluminescence spectroscopy M Larsson, A Elfving, WX Ni, GV Hansson, PO Holtz
Physical Review B 73 (19), 195319, 2006
45 2006 High‐resolution x‐ray analysis of InGaN/GaN superlattices grown on sapphire substrates with GaN layers W Li, P Bergman, I Ivanov, WX Ni, H Amano, I Akasa
Applied physics letters 69 (22), 3390-3392, 1996
44 1996 Hall factor in strained p -type doped alloy Y Fu, KB Joelsson, KJ Grahn, WX Ni, GV Hansson, M Willander
Physical Review B 54 (16), 11317, 1996
41 1996 Strain and relaxation in Si-MBE structures studied by reciprocal space mapping using high resolution X-ray diffraction GV Hansson, HH Radamsson, WX Ni
Journal of Materials Science: Materials in Electronics 6, 292-297, 1995
41 1995