Obserwuj
Huili Grace Xing
Huili Grace Xing
Prof. of ECE & MSE, Cornell University
Zweryfikowany adres z cornell.edu - Strona główna
Tytuł
Cytowane przez
Cytowane przez
Rok
Broadband graphene terahertz modulators enabled by intraband transitions
B Sensale-Rodriguez, R Yan, MM Kelly, T Fang, K Tahy, WS Hwang, ...
Nature communications 3 (1), 1-7, 2012
9732012
Carrier statistics and quantum capacitance of graphene sheets and ribbons
T Fang, A Konar, H Xing, D Jena
Applied Physics Letters 91 (9), 092109, 2007
7372007
Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D Crystals
H Shi, R Yan, S Bertolazzi, J Brivio, B Gao, A Kis, D Jena, HG Xing, ...
ACS nano 7 (2), 1072-1080, 2013
7352013
Thermal conductivity of monolayer molybdenum disulfide obtained from temperature-dependent Raman spectroscopy
R Yan, JR Simpson, S Bertolazzi, J Brivio, M Watson, X Wu, A Kis, T Luo, ...
ACS nano 8 (1), 986-993, 2014
6992014
Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures
J Simon, V Protasenko, C Lian, H Xing, D Jena
Science 327 (5961), 60-64, 2010
6672010
High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates
H Xing, Y Dora, A Chini, S Heikman, S Keller, UK Mishra
IEEE Electron Device Letters 25 (4), 161-163, 2004
4402004
Heavy doping effects in Mg-doped GaN
P Kozodoy, H Xing, SP DenBaars, UK Mishra, A Saxler, R Perrin, ...
Journal of Applied Physics 87 (4), 1832-1835, 2000
4262000
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz
Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ...
IEEE Electron Device Letters 33 (7), 988-990, 2012
3662012
High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, H Xing, ...
Applied Physics Letters 104 (20), 203111, 2014
3282014
Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering
T Fang, A Konar, H Xing, D Jena
Physical Review B 78 (20), 205403, 2008
3092008
Intrinsic electron mobility limits in β-Ga2O3
N Ma, N Tanen, A Verma, Z Guo, T Luo, H Xing, D Jena
Applied Physics Letters 109 (21), 212101, 2016
2812016
Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment
R Yan, S Fathipour, Y Han, B Song, S Xiao, M Li, N Ma, V Protasenko, ...
Nano letters 15 (9), 5791-5798, 2015
2772015
Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior
W Sik Hwang, M Remskar, R Yan, V Protasenko, K Tahy, S Doo Chae, ...
Applied Physics Letters 101 (1), 013107, 2012
2752012
Graphene nanoribbon tunnel transistors
Q Zhang, T Fang, H Xing, A Seabaugh, D Jena
IEEE Electron Device Letters 29 (12), 1344-1346, 2008
2712008
Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators
B Sensale-Rodriguez, R Yan, S Rafique, M Zhu, W Li, X Liang, ...
Nano letters 12 (9), 4518-4522, 2012
2672012
Unique prospects for graphene-based terahertz modulators
B Sensale-Rodriguez, T Fang, R Yan, MM Kelly, D Jena, L Liu, H Xing
Applied Physics Letters 99 (11), 113104, 2011
2232011
Polarization-enhanced Mg doping of AlGaN/GaN superlattices
P Kozodoy, YP Smorchkova, M Hansen, H Xing, SP DenBaars, UK Mishra, ...
Applied Physics Letters 75 (16), 2444-2446, 1999
2071999
Enhancement-Mode Ga2O3Vertical Transistors With Breakdown Voltage >1 kV
Z Hu, K Nomoto, W Li, N Tanen, K Sasaki, A Kuramata, T Nakamura, ...
IEEE Electron Device Letters 39 (6), 869-872, 2018
1952018
AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance
T Zimmermann, D Deen, Y Cao, J Simon, P Fay, D Jena, HG Xing
IEEE Electron Device Letters 29 (7), 661-664, 2008
1942008
Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
R Yan, Q Zhang, W Li, I Calizo, T Shen, CA Richter, AR Hight-Walker, ...
Applied Physics Letters 101 (2), 022105, 2012
1832012
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