Engineering the bandgap of unipolar HgCdTe-based nBn infrared photodetectors M Kopytko, J Wróbel, K Jóźwikowski, A Rogalski, J Antoszewski, ...
Journal of Electronic Materials 44 (1), 158-166, 2015
52 2015 Performance modeling of MWIR InAs/GaSb/B–Al0. 2Ga0. 8Sb type-II superlattice nBn detector P Martyniuk, J Wróbel, E Plis, P Madejczyk, A Kowalewski, W Gawron, ...
Semiconductor Science and Technology 27 (5), 055002, 2012
49 2012 Modeling of midwavelength infrared InAs/GaSb type II superlattice detectors P Martyniuk, J Wrobel, E Plis, P Madejczyk, W Gawron, A Kowalewski, ...
Optical Engineering 52 (6), 061307, 2013
17 2013 Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices J Wróbel, Ł Ciura, M Motyka, F Szmulowicz, A Kolek, A Kowalewski, ...
Semicond. Sci. Technol 30 (115004), 115004, 2015
16 2015 Dark current modeling of MWIR type-II superlattice detectors J Wróbel, P Martyniuk, E Plis, P Madejczyk, W Gawron, S Krishna, ...
Infrared Technology and Applications XXXVIII 8353, 412-420, 2012
16 2012 1/ Ł Ciura, A Kolek, J Wróbel, W Gawron, A Rogalski
IEEE Transactions on Electron Devices 62 (6), 2022-2026, 2015
13 2015 Performance limits of room-temperature InAsSb photodiodes J Wróbel, R Ciupa, A Rogalski
Infrared Technology and Applications XXXVI 7660, 982-990, 2010
11 2010 Analysis of temperature dependence of dark current mechanisms in mid-wavelength infrared pin type-II superlattice photodiodes J Wróbel, E Plis, W Gawron, M Motyka, P Martyniuk, P Madejczyk, ...
Sens. Mater 26, 235-244, 2014
7 2014 Study on the specific contact resistance of evaporated or electroplated golden contacts to n-and p-type InAs epitaxial layers grown by MBE J Boguski, K Kolwas, K Michalczewski, J Piotrowski, J Wróbel, K Gorczyca, ...
Materials Science in Semiconductor Processing 81, 60-63, 2018
6 2018 Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs J Wróbel, GA Umana-Membreno, J Boguski, D Sztenkiel, PP Michałowski, ...
physica status solidi (RRL)–Rapid Research Letters 14 (4), 1900604, 2020
5 2020 Low-frequency noise in type-II superlattice MWIR nBn detector L Ciura, A Kolek, Z Zawiślak, AW Stadler, A Kowalewski, P Martyniuk, ...
2013 22nd International Conference on Noise and Fluctuations (ICNF), 1-4, 2013
4 2013 Semiconductor contact layer characterization in a context of hall effect measurements A Kowalewski, J Wróbel, J Boguski, K Gorczyca, P Martyniuk
Metrology and Measurement Systems 26 (1), 2019
3 2019 Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate J Wróbel, K Grodecki, D Benyahia, K Murawski, K Michalczewski, ...
13th Conference on Integrated Optics: Sensors, Sensing Structures, and …, 2018
3 2018 Mobility spectrum analysis of HgCdTe epitaxial layers grown by metalorganic chemical vapour deposition J Wróbel, K Gorczyca, GA Umana-Membreno, A Kębłowski, J Boguski, ...
12th Conference on Integrated Optics: Sensors, Sensing Structures, and …, 2017
2 2017 Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers S Złotnik, J Wróbel, J Boguski, M Nyga, MA Kojdecki, J Wróbel
Sensors 21 (16), 5272, 2021
1 2021 Enhanced coercivity in SmCo5 magnet subjected to hydrogen treatment II Bulyk, VV Chabanenko, A Nabiałek, T Zajarniuk, A Szewczyk, ...
Journal of Alloys and Compounds 866, 158272, 2021
1 2021 Low-frequency noise versus deep level transient spectroscopy of InAs/GaSb superlattice mid-wavelength infrared detectors L Ciura, A Kolek, J Wróbel, P Martyniuk
Noise and Fluctuations (ICNF), 2017 International Conference on, 1-4, 2017
1 2017 Contribution of Series Resistance in Modelling of High-Temperature Type II Superlattice pin Photodiodes J Wróbel, P Martyniuk, A Rogalski
Advances in Optical Technologies 2012, 2012
1 2012 Experimental Verification of Single‐Type Electron Population in Indium Tin Oxide Layers S Złotnik, A Pianelli, J Boguski, MA Kojdecki, P Moszczyński, J Parka, ...
physica status solidi (RRL)–Rapid Research Letters, 2200170, 2022
2022 Heavy-hole band splitting observed in mobility spectrum of p-type InAs grown on GaAs substrate J Wrobel, G Umana-Membreno, J Boguski, D Sztenkiel, PP Michalowski, ...
arXiv preprint arXiv:1908.00097, 2019
2019 
Antoni RogalskiMilitary University of TechnologyZweryfikowany adres z wat.edu.pl
