Resonant cavity-enhanced (RCE) photodetectors K Kishino, MS Unlu, JI Chyi, J Reed, L Arsenault, H Morkoc
IEEE Journal of Quantum Electronics 27 (8), 2025-2034, 1991
471 1991 Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities WH Chang, WY Chen, HS Chang, TP Hsieh, JI Chyi, TM Hsu
Physical review letters 96 (11), 117401, 2006
360 2006 Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells YS Lin, KJ Ma, C Hsu, SW Feng, YC Cheng, CC Liao, CC Yang, CC Chou, ...
Applied Physics Letters 77 (19), 2988-2990, 2000
305 2000 Light emitting diode element and method for fabricating the same HC Lin, CM Lee, JI Chyi
US Patent 8,101,447, 2012
245 2012 quantum-dot infrared photodetector with operating temperature up to 260 KL Jiang, SS Li, NT Yeh, JI Chyi, CE Ross, KS Jones
Applied physics letters 82 (12), 1986-1988, 2003
184 2003 AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy A Kikuchi, R Bannai, K Kishino, CM Lee, JI Chyi
Applied physics letters 81 (9), 1729-1731, 2002
180 2002 Growth of InSb and InAs1−x Sbx on GaAs by molecular beam epitaxy JI Chyi, S Kalem, NS Kumar, CW Litton, H Morkoc
Applied physics letters 53 (12), 1092-1094, 1988
144 1988 metal-oxide-semiconductor field-effect transistorJW Johnson, B Luo, F Ren, BP Gila, W Krishnamoorthy, CR Abernathy, ...
Applied Physics Letters 77 (20), 3230-3232, 2000
143 2000 enhancement mode metal-oxide semiconductor field-effect transistorsY Irokawa, Y Nakano, M Ishiko, T Kachi, J Kim, F Ren, BP Gila, ...
Applied physics letters 84 (15), 2919-2921, 2004
137 2004 Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures SW Feng, YC Cheng, YY Chung, CC Yang, YS Lin, C Hsu, KJ Ma, JI Chyi
Journal of Applied Physics 92 (8), 4441-4448, 2002
131 2002 GaN electronics for high power, high temperature applications SJ Pearton, F Ren, AP Zhang, G Dang, XA Cao, KP Lee, H Cho, BP Gila, ...
Materials Science and Engineering: B 82 (1-3), 227-231, 2001
130 2001 Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers JW Johnson, AP Zhang, WB Luo, F Ren, SJ Pearton, SS Park, YJ Park, ...
IEEE Transactions on Electron devices 49 (1), 32-36, 2002
126 2002 Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots WH Chang, TM Hsu, CC Huang, SL Hsu, CY Lai, NT Yeh, TE Nee, JI Chyi
Physical Review B 62 (11), 6959, 2000
122 2000 High voltage GaN schottky rectifiers GT Dang, AP Zhang, F Ren, XA Cao, SJ Pearton, H Cho, J Han, JI Chyi, ...
IEEE Transactions on Electron Devices 47 (4), 692-696, 2000
119 2000 Comparison of GaN pin and Schottky rectifier performance AP Zhan, GT Dang, F Ren, H Cho, KP Lee, SJ Pearton, JI Chyi, TY Nee, ...
IEEE Transactions on Electron Devices 48 (3), 407-411, 2001
115 2001 Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells CC Chuo, CM Lee, JI Chyi
Applied Physics Letters 78 (3), 314-316, 2001
115 2001 Vertical and lateral GaN rectifiers on free-standing GaN substrates AP Zhang, JW Johnson, B Luo, F Ren, SJ Pearton, SS Park, YJ Park, ...
Applied Physics Letters 79 (10), 1555-1557, 2001
107 2001 Mechanism of luminescence in InGaN/GaN multiple quantum wells HC Yang, PF Kuo, TY Lin, YF Chen, KH Chen, LC Chen, JI Chyi
Applied Physics Letters 76 (25), 3712-3714, 2000
105 2000 Molecular beam epitaxial growth and characterization of InSb on Si JI Chyi, D Biswas, SV Iyer, NS Kumar, H Morkoc, R Bean, K Zanio, ...
Applied physics letters 54 (11), 1016-1018, 1989
103 1989 Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing TM Hsu, YS Lan, WH Chang, NT Yeh, JI Chyi
Applied Physics Letters 76 (6), 691-693, 2000
102 2000