MBE growth of strain-compensated InGaAs/InAlAs/InP quantum cascade lasers MB P. Gutowski, I. Sankowska, P. Karbownik, D. Pierścińska, O ... Journal of Crystal Growth 466, 22-29, 2017 | 40 | 2017 |
High-voltage (3.3 kV) 4H-SiC JBS diodes PA Ivanov, IV Grekhov, ND Il’inskaya, OI Kon’kov, AS Potapov, ... Semiconductors 45, 668-672, 2011 | 18 | 2011 |
Heat dissipation schemes in AlInAs/InGaAs/InP quantum cascade lasers monitored by CCD thermoreflectance D Pierścińska, K Pierściński, P Gutowski, M Badura, G Sobczak, ... Photonics 4 (4), 47, 2017 | 16 | 2017 |
High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz IA Andreev, OY Serebrennikova, GS Sokolovskii, VV Dudelev, ... Semiconductors 47, 1103-1109, 2013 | 16 | 2013 |
Excess leakage currents in high-voltage 4H-SiC Schottky diodes PA Ivanov, IV Grekhov, AS Potapov, TP Samsonova, ND Il’inskaya, ... Semiconductors 44, 653-656, 2010 | 16 | 2010 |
High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ≈ 3.3 μm) AP Astakhova, AS Golovin, ND Il’inskaya, KV Kalinina, SS Kizhayev, ... Semiconductors 44, 263-268, 2010 | 14 | 2010 |
LEDs based on InAs/InAsSb heterostructures for CO2 spectroscopy (λ = 4.3 μm) AS Golovin, AP Astakhova, SS Kizhaev, ND Il’inskaya, ... Technical Physics Letters 36, 47-49, 2010 | 11 | 2010 |
Electrical properties of Pd-oxide-InP structures EA Grebenshchikova, VV Evstropov, ND Il’inskaya, YS Mel’nikov, ... Semiconductors 49, 364-366, 2015 | 10 | 2015 |
Selective etching of GaAs grown over AlAs etch-stop layer in buffered citric acid/H2O2 solution A Kuźmicz, K Chmielewski, O Serebrennikova, J Muszalski Materials Science in Semiconductor Processing 63, 52-57, 2017 | 6 | 2017 |
Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm IA Andreev, OY Serebrennikova, ND Il’inskaya, AA Pivovarova, ... Semiconductors 49, 1671-1677, 2015 | 3 | 2015 |
Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes EA Grebenshchikova, DA Starostenko, VV Sherstnev, GG Konovalov, ... Technical Physics Letters 38, 470-473, 2012 | 3 | 2012 |
Mode synchronization in a laser with coupled disk cavities AA Leonidov, VV Sherstnev, EA Grebenshchikova, ND Il’inskaya, ... Technical Physics Letters 41, 801-803, 2015 | 2 | 2015 |
Increasing the emission power of LEDs (λ= 1.7–2.4 μm) by changing the light direction in the GaSb/GaInAsSb/GaAlAsSb heterostructure AV Zolotukhin, VV Sherstnev, KS Savelieva, EA Grebenshchikova, ... Journal of Physics: Conference Series 461 (1), 012036, 2013 | 2 | 2013 |
Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 μm) AN Imenkov, VV Sherstnev, IV Kovalev, ND Il’inskaya, ... Semiconductors 47, 831-834, 2013 | 2 | 2013 |
Room-temperature photodiodes based on InAs/InAs0.88Sb0.12/InAsSbP heterostructures for extended (1.5–4.8 μm) spectral range DA Starostenko, VV Sherstnev, PA Alekseev, IA Andreev, ND Il’inskaya, ... Technical Physics Letters 37, 935-938, 2011 | 2 | 2011 |
Fast-response p-i-n photodiodes for 0.9–2.4 μm wavelength range IA Andreev, OY Serebrennikova, GS Sokolovskii, EV Kunitsyna, ... Technical Physics Letters 36, 412-414, 2010 | 2 | 2010 |
Increasing output power of LEDs (λ= 1.7–2.4 μm) by changing directions of reflected light fluxes in GaSb/GaInAsSb/GaAlAsSb heterostructures AV Zolotukhin, VV Sherstnev, KA Savel’eva, EA Grebenshchikova, ... Technical Physics Letters 39, 203-205, 2013 | 1 | 2013 |
Characterization of quantum-confinement whispering-gallery-mode lasers operating above room temperature AN Imenkov, VV Sherstnev, AM Monakhov, IV Kovalev, ND Il’inskaya, ... Technical Physics Letters 38, 654-656, 2012 | 1 | 2012 |
Mid-infrared radiation sources based on coupled disk cavities EA Grebenshchikova, VV Sherstnev, MI Larchenkov, OY Serebrennikova, ... Technical Physics Letters 38, 304-306, 2012 | 1 | 2012 |
Heat dissipation schemes in QCLs monitored by CCD thermoreflectance (Conference Presentation) K Pierscinski, D Pierścińska, M Morawiec, P Gutowski, P Karbownik, ... Novel In-Plane Semiconductor Lasers XVI 10123, 253-253, 2017 | | 2017 |