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OY Serebrennikova
OY Serebrennikova
Verified email at mail.ioffe.ru
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Cited by
Year
MBE growth of strain-compensated InGaAs/InAlAs/InP quantum cascade lasers
MB P. Gutowski, I. Sankowska, P. Karbownik, D. Pier¶cińska, O ...
Journal of Crystal Growth 466, 22-29, 2017
402017
High-voltage (3.3 kV) 4H-SiC JBS diodes
PA Ivanov, IV Grekhov, ND Il’inskaya, OI Kon’kov, AS Potapov, ...
Semiconductors 45, 668-672, 2011
182011
Heat dissipation schemes in AlInAs/InGaAs/InP quantum cascade lasers monitored by CCD thermoreflectance
D Pier¶cińska, K Pier¶ciński, P Gutowski, M Badura, G Sobczak, ...
Photonics 4 (4), 47, 2017
162017
High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz
IA Andreev, OY Serebrennikova, GS Sokolovskii, VV Dudelev, ...
Semiconductors 47, 1103-1109, 2013
162013
Excess leakage currents in high-voltage 4H-SiC Schottky diodes
PA Ivanov, IV Grekhov, AS Potapov, TP Samsonova, ND Il’inskaya, ...
Semiconductors 44, 653-656, 2010
162010
High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ≈ 3.3 μm)
AP Astakhova, AS Golovin, ND Il’inskaya, KV Kalinina, SS Kizhayev, ...
Semiconductors 44, 263-268, 2010
142010
LEDs based on InAs/InAsSb heterostructures for CO2 spectroscopy (λ = 4.3 μm)
AS Golovin, AP Astakhova, SS Kizhaev, ND Il’inskaya, ...
Technical Physics Letters 36, 47-49, 2010
112010
Electrical properties of Pd-oxide-InP structures
EA Grebenshchikova, VV Evstropov, ND Il’inskaya, YS Mel’nikov, ...
Semiconductors 49, 364-366, 2015
102015
Selective etching of GaAs grown over AlAs etch-stop layer in buffered citric acid/H2O2 solution
A Ku¼micz, K Chmielewski, O Serebrennikova, J Muszalski
Materials Science in Semiconductor Processing 63, 52-57, 2017
62017
Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm
IA Andreev, OY Serebrennikova, ND Il’inskaya, AA Pivovarova, ...
Semiconductors 49, 1671-1677, 2015
32015
Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes
EA Grebenshchikova, DA Starostenko, VV Sherstnev, GG Konovalov, ...
Technical Physics Letters 38, 470-473, 2012
32012
Mode synchronization in a laser with coupled disk cavities
AA Leonidov, VV Sherstnev, EA Grebenshchikova, ND Il’inskaya, ...
Technical Physics Letters 41, 801-803, 2015
22015
Increasing the emission power of LEDs (λ= 1.7–2.4 μm) by changing the light direction in the GaSb/GaInAsSb/GaAlAsSb heterostructure
AV Zolotukhin, VV Sherstnev, KS Savelieva, EA Grebenshchikova, ...
Journal of Physics: Conference Series 461 (1), 012036, 2013
22013
Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 μm)
AN Imenkov, VV Sherstnev, IV Kovalev, ND Il’inskaya, ...
Semiconductors 47, 831-834, 2013
22013
Room-temperature photodiodes based on InAs/InAs0.88Sb0.12/InAsSbP heterostructures for extended (1.5–4.8 μm) spectral range
DA Starostenko, VV Sherstnev, PA Alekseev, IA Andreev, ND Il’inskaya, ...
Technical Physics Letters 37, 935-938, 2011
22011
Fast-response p-i-n photodiodes for 0.9–2.4 μm wavelength range
IA Andreev, OY Serebrennikova, GS Sokolovskii, EV Kunitsyna, ...
Technical Physics Letters 36, 412-414, 2010
22010
Increasing output power of LEDs (λ= 1.7–2.4 μm) by changing directions of reflected light fluxes in GaSb/GaInAsSb/GaAlAsSb heterostructures
AV Zolotukhin, VV Sherstnev, KA Savel’eva, EA Grebenshchikova, ...
Technical Physics Letters 39, 203-205, 2013
12013
Characterization of quantum-confinement whispering-gallery-mode lasers operating above room temperature
AN Imenkov, VV Sherstnev, AM Monakhov, IV Kovalev, ND Il’inskaya, ...
Technical Physics Letters 38, 654-656, 2012
12012
Mid-infrared radiation sources based on coupled disk cavities
EA Grebenshchikova, VV Sherstnev, MI Larchenkov, OY Serebrennikova, ...
Technical Physics Letters 38, 304-306, 2012
12012
Heat dissipation schemes in QCLs monitored by CCD thermoreflectance (Conference Presentation)
K Pierscinski, D Pier¶cińska, M Morawiec, P Gutowski, P Karbownik, ...
Novel In-Plane Semiconductor Lasers XVI 10123, 253-253, 2017
2017
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