The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
612 2018 High-performance GaN vertical fin power transistors on bulk GaN substrates M Sun, Y Zhang, X Gao, T Palacios
IEEE Electron Device Letters 38 (4), 509-512, 2017
193 2017 High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits Lili Yu, Ahmad Zubair, Elton J. G. Santos, Xu Zhang, Yuxuan Lin, Yuhao Zhang ...
Nano Letters 15 (8), 4928–4934, 2015
176 2015 Two-dimensional MoS 2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting Xu Zhang, Jesús Grajal, Jose Luis Vazquez-Roy, Ujwal Radhakrishna, Xiaoxue ...
Nature, 2019
152 2019 Gallium nitride vertical power devices on foreign substrates: a review and outlook Y Zhang, A Dadgar, T Palacios
Journal of Physics D: Applied Physics 51 (27), 273001, 2018
150 2018 GaN-on-Si Vertical Schottky and pn Diodes Y Zhang, M Sun, D Piedra, M Azize, X Zhang, T Fujishima, T Palacios
IEEE Electron Device Letters 35 (6), 618 - 620, 2014
138 2014 Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors Y Zhang, M Sun, Z Liu, D Piedra, HS Lee, F Gao, T Fujishima, T Palacios
IEEE Transactions on Electron Devices 60 (7), 2224-2230, 2013
123 2013 Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes Y Zhang, M Sun, HY Wong, Y Lin, P Srivastava, C Hatem, M Azize, ...
Electron Devices, IEEE Transactions on 62 (7), 2155 - 2161, 2015
111 2015 Design, Modeling and Fabrication of CVD Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics Lili Yu, Dina El-Damak, Ujwal Radhakrishna, Xi Ling, Ahmad Zubair, Yuxuan ...
Nano Letters 16 (10), 6349–6356, 2016
108 * 2016 Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation Yuhao Zhang, Zhihong Liu, Marko J Tadjer, Min Sun, Daniel Piedra ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
104 2017 Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors Y Zhang, M Sun, SJ Joglekar, T Fujishima, T Palacios
Applied Physics Letters 103 (3), 033524, 2013
100 2013 Materials and processing issues in vertical GaN power electronics J Hu, Y Zhang, M Sun, D Piedra, N Chowdhury, T Palacios
Materials Science in Semiconductor Processing 78, 75-84, 2018
86 2018 Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit Y Zhang, M Sun, J Perozek, Z Liu, A Zubair, D Piedra, N Chowdhury, ...
IEEE Electron Device Letters 40 (1), 75-78, 2019
73 2019 1200 V GaN vertical fin power field-effect transistors Y Zhang, M Sun, D Piedra, J Hu, Z Liu, Y Lin, X Gao, K Shepard, ...
Electron Devices Meeting (IEDM), 2017 IEEE International, 9.2. 1-9.2. 4, 2017
73 2017 Vertical Ga2O3 Schottky Barrier Diodes with Small-Angle Beveled Field Plates: a Baliga’s Figure-of-Merit of 0.6 GW/cm2 Noah Allen, Ming Xiao, Xiaodong Yan, Kohei Sasaki, Marko J. Tadjer, Jiahui ...
IEEE Electron Device Letters, 2019
70 2019 Trench formation and corner rounding in vertical GaN power devices Yuhao Zhang, Min Sun, Zhihong Liu, Daniel Piedra, Jie Hu, Xiang Gao, Tomás ...
Applied Physics Letters 110 (19), 193506, 2017
69 2017 High-performance 500 V quasi-and fully-vertical GaN-on-Si pn diodes Y Zhang, D Piedra, M Sun, J Hennig, A Dadgar, L Yu, T Palacios
IEEE Electron Device Lett. 38 (2), 248-251, 2017
63 2017 Design space and origin of off-state leakage in GaN vertical power diodes Y Zhang, H-Y Wong, M Sun, S Joglekar, L Yu, NA Braga, RV Mickevicius, T Palacios
2015 IEEE International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2015
61 2015 720-V/0.35-m2 Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers Y Zhang, M Yuan, N Chowdhury, K Cheng, T Palacios
IEEE Electron Device Letters 39 (5), 715-718, 2018
57 2018 p-Channel GaN Transistor based on p-GaN/AlGaN/GaN on Si N Chowdhury, J Lemettinen, Q Xie, Y Zhang, NS Rajput, P Xiang, ...
IEEE Electron Device Letters, 2019
51 2019 
Tomás PalaciosMITZweryfikowany adres z mit.edu
