| Studies on the electrical characteristics of single-heterojunction GaN based HEMTs with AlGaN nano-layer of 21 nm A Dutta International Journal of Applied Nanotechnology 5 (2), 26-38, 2019 | 2 | 2019 |
| Investigation to Enhance the DC and RF Performances of Nitride-Based Nanoelectronic HEMTs A Dutta Indian Journal of Pure & Applied Physics (IJPAP) 59 (9), 619-628, 2021 | | 2021 |
| Comparative studies on the DC and RF performances of conventional HEMT and double quantum well heterostructure A Dutta Optical and Quantum Electronics 53 (2), 1-14, 2021 | | 2021 |
| Studies on the Effects of Aluminium Mole Fraction, Doping Concentration and Gate Length to Control the Drain Current in GaN based High Electron Mobility Transistors A Dutta, S Kalita, S Mukhopadhyay National Conference on Recent Trends in Electronics and Communication …, 2020 | | 2020 |
| Studies on the Electrical Characteristics of GaN based HEMTs at the AlGaN Nano-Layer Thickness of 9 nm A Dutta International Journal of Nanomaterials and Nanostructures 6 (1), 14-28, 2020 | | 2020 |
| Drain Characteristics of GaN based Single-Heterojunction HEMTs with Variations in Gate Length and in Thickness of AlGaN Nano-Layer A Dutta Journal of Nanoscience Nanoengineering and Applications 10 (1), 1-10, 2020 | | 2020 |
| Effects of Drain Voltage, Gate Voltage and Aluminium Mole Fraction on Drain Current in GaN based Single-Heterojunction HEMTs designed with AlGaN Nano-Layers A Dutta Nano Trends-A Journal of Nano Technology & Its Applications 22 (1), 6-14, 2020 | | 2020 |
| Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors A Dutta Journal of Semiconductor Devices and Circuits 7 (1), 18-28, 2020 | | 2020 |
