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AVRAJYOTI DUTTA
Title
Cited by
Cited by
Year
Studies on the electrical characteristics of single-heterojunction GaN based HEMTs with AlGaN nano-layer of 21 nm
A Dutta
International Journal of Applied Nanotechnology 5 (2), 26-38, 2019
22019
SUBJECTIVE QUALITY ASSESSMENT OF VIDEO SUMMARISATION ALGORITHMS: A CROWDSOURCING APPROACH
A Dutta, M Leszczuk, D Juszka, M Grega
Radiocommunication and Teleinformatics Conference KRiT 2023: September 20–22 …, 2023
2023
Subjective Quality Assessment of Video Summarization Algorithms: A Crowdsourcing Approach
A Dutta, M Leszczuk, D Juszka, M Grega
Video Quality Experts Group (VQEG) Meeting on 30 June 2023 at Sony …, 2023
2023
GitHub Repository: Crowdsourcing & Video Summarization
A Dutta
https://github.com/dutta-agh/TANGO_A-B, 2023
2023
Investigation to Enhance the DC and RF Performances of Nitride-Based Nanoelectronic HEMTs
A Dutta
Indian Journal of Pure & Applied Physics (IJPAP) 59 (9), 619-628, 2021
2021
Experimental Investigations to Improve the Electrical Characteristics of Nitride-Based Nano electronic High Electron Mobility Transistors
A Dutta
Journal of Semiconductor Devices and Circuits 8 (1), 14 - 30, 2021
2021
Simulation Studies on Gallium Nitride based Quantum Well Heterostructure
A Dutta
Publisher: Ministry of Education (Government of India), India, 2021
2021
Comparative studies on the DC and RF performances of conventional HEMT and double quantum well heterostructure
A Dutta
Optical and Quantum Electronics 53 (2), 1-14, 2021
2021
Design and Performance of Semiconductor-Biosensor
A Dutta
Journal of Semiconductor Devices and Circuits 8 (2), 1 - 13, 2021
2021
Studies on the Effects of Aluminium Mole Fraction, Doping Concentration and Gate Length to Control the Drain Current in GaN based High Electron Mobility Transistors
A Dutta
National Conference on Recent Trends in Electronics and Communication …, 2020
2020
Studies on the Electrical Characteristics of GaN based HEMTs at the AlGaN Nano-Layer Thickness of 9 nm
A Dutta
International Journal of Nanomaterials and Nanostructures 6 (1), 14-28, 2020
2020
Drain Characteristics of GaN based Single-Heterojunction HEMTs with Variations in Gate Length and in Thickness of AlGaN Nano-Layer
A Dutta
Journal of Nanoscience Nanoengineering and Applications 10 (1), 1-10, 2020
2020
Effects of Drain Voltage, Gate Voltage and Aluminium Mole Fraction on Drain Current in GaN based Single-Heterojunction HEMTs designed with AlGaN Nano-Layers
A Dutta
Nano Trends: A Journal of Nano Technology & Its Applications 22 (1), 6-14, 2020
2020
Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors
A Dutta
Journal of Semiconductor Devices and Circuits 7 (1), 18 - 28, 2020
2020
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