Capping process of InAs∕ GaAs quantum dots studied by cross-sectional scanning tunneling microscopy Q Gong, P Offermans, R Nötzel, PM Koenraad, JH Wolter
Applied physics letters 85 (23), 5697-5699, 2004
136 2004 Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy Q Gong, R Nötzel, PJ Van Veldhoven, TJ Eijkemans, JH Wolter
Applied physics letters 84 (2), 275-277, 2004
113 2004 Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum Z Sun, D Ding, Q Gong, W Zhou, B Xu, ZG Wang
Optical and quantum electronics 31 (12), 1235-1246, 1999
113 1999 Chemical vapor deposition of graphene on liquid metal catalysts G Ding, Y Zhu, S Wang, Q Gong, L Sun, T Wu, X Xie, M Jiang
Carbon 53, 321-326, 2013
93 2013 All-optical switching due to state filling in quantum dots R Prasanth, JEM Haverkort, A Deepthy, EW Bogaart, J Van der Tol, ...
Applied physics letters 84 (20), 4059-4061, 2004
78 2004 InPBi single crystals grown by molecular beam epitaxy K Wang, Y Gu, HF Zhou, LY Zhang, CZ Kang, MJ Wu, WW Pan, PF Lu, ...
Scientific reports 4 (1), 1-6, 2014
77 2014 Formation of columnar quantum dots on J He, R Nötzel, P Offermans, PM Koenraad, Q Gong, GJ Hamhuis, ...
Applied Physics Letters 85 (14), 2771-2773, 2004
60 2004 Room temperature continuous-wave operation of InAs/InP (100) quantum dot lasers grown by gas-source molecular-beam epitaxy SG Li, Q Gong, YF Lao, K He, J Li, YG Zhang, SL Feng, HL Wang
Applied Physics Letters 93 (11), 111109-111109-3, 2008
56 2008 Diffusion and incorporation: shape evolution during overgrowth on structured substrates W Braun, VM Kaganer, A Trampert, HP Schönherr, Q Gong, R Nötzel, ...
Journal of crystal growth 227, 51-55, 2001
56 2001 Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy Y Gu, K Wang, H Zhou, Y Li, C Cao, L Zhang, Y Zhang, Q Gong, S Wang
Nanoscale research letters 9 (1), 24, 2014
53 2014 External electric field effect on the hydrogenic donor impurity in zinc-blende GaN/AlGaN cylindrical quantum dot L Jiang, H Wang, H Wu, Q Gong, S Feng
Journal of Applied Physics 105 (5), 053710, 2009
53 2009 Photonic band gap structures in the Thue-Morse lattice H Lei, J Chen, G Nouet, S Feng, Q Gong, X Jiang
Physical Review B 75 (20), 205109, 2007
48 2007 Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP1−x Bix dilute bismide with x ≤ 0.034 J Kopaczek, R Kudrawiec, MP Polak, P Scharoch, M Birkett, TD Veal, ...
Applied Physics Letters 105 (22), 222104, 2014
41 2014 Two-color quantum dot laser with tunable wavelength gap SG Li, Q Gong, YF Lao, HD Yang, S Gao, P Chen, YG Zhang, SL Feng, ...
Applied Physics Letters 95 (25), 251111, 2009
38 2009 Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy W Jiang, H Xu, B Xu, W Zhou, Q Gong, D Ding, J Liang, Z Wang
Journal of Vacuum Science & Technology B 19 (1), 197-201, 2001
32 2001 Ultrafast carrier capture at room temperature in InAs/InP quantum dots emitting in the 1.55 μm wavelength region EW Bogaart, R Notzel, Q Gong, JEM Haverkort, JH Wolter
Applied Physics Letters 86 (17), 173109-173109-3, 2005
30 2005 Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes BLC Y. J. Chen, X. Y. Zhao, J. Huang, Z. Deng, C. F. Cao, Q. Gong
Optics Express 26 (26), 35034, 2018
29 2018 Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge YG Zhou, C Zhou, CF Cao, JB Du, Q Gong, C Wang
Optics Express 25 (23), 28817-28824, 2017
28 2017 The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa 1− xN spherical quantum dot H Wu, H Wang, L Jiang, Q Gong, S Feng
Physica B: Condensed Matter 404 (1), 122-126, 2009
28 2009 InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting submonolayer GaP interlayers Q Gong, R Notzel, PJ Van Veldhoven, TJ Eijkemans, JH Wolter
Applied physics letters 85 (8), 1404-1406, 2004
28 2004