Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high‐k dielectrics and other … L Niinistö, M Nieminen, J Päiväsaari, J Niinistö, M Putkonen, M Nieminen
physica status solidi (a) 201 (7), 1443-1452, 2004
468 2004 Method of depositing rare earth oxide thin films J Niinistō, M Putkonen, M Ritala, P Räisänen, A Niskanen, M Leskelä
US Patent 6,858,546, 2005
438 2005 Atomic Layer Deposition of High‐k Oxides of the Group 4 Metals for Memory Applications J Niinistö, K Kukli, M Heikkilä, M Ritala, M Leskelä
Advanced Engineering Materials 11 (4), 223-234, 2009
175 2009 Industrial applications of atomic layer deposition M Ritala, J Niinistö
ECS transactions 25 (8), 641, 2009
172 2009 Plasma-enhanced atomic layer deposition of silver thin films M Kariniemi, J Niinistö, T Hatanpää, M Kemell, T Sajavaara, M Ritala, ...
Chemistry of Materials 23 (11), 2901-2907, 2011
149 2011 Processing of Y2O3 thin films by atomic layer deposition from cyclopentadienyl-type compounds and water as precursors J Niinistö, M Putkonen, L Niinistö
Chemistry of materials 16 (15), 2953-2958, 2004
144 2004 Chemical vapour deposition: precursors, processes and applications M Ritala, H Parala, R Kanjolia, RD Dupuis, SE Alexandrov, SJC Irvine, ...
Royal Society of Chemistry, 2008
126 2008 Atomic layer deposition and characterization of vanadium oxide thin films T Blanquart, J Niinistö, M Gavagnin, V Longo, M Heikkilä, E Puukilainen, ...
RSC advances 3 (4), 1179-1185, 2013
115 2013 Surface-controlled deposition of Sc2O3 thin films by atomic layer epitaxy using β-diketonate and organometallic precursors M Putkonen, M Nieminen, J Niinistö, L Niinistö, T Sajavaara
Chemistry of materials 13 (12), 4701-4707, 2001
102 2001 Method of depositing rare earth oxide thin films J Niinistö, M Putkonen, M Ritala, P Räisänen, A Niskanen, M Leskelä
US Patent 7,498,272, 2009
101 2009 Gadolinium oxide thin films by atomic layer deposition J Niinistö, N Petrova, M Putkonen, L Niinistö, K Arstila, T Sajavaara
Journal of crystal growth 285 (1-2), 191-200, 2005
101 2005 ZrO2 thin films grown on silicon substrates by atomic layer deposition with Cp2Zr (CH3) 2 and water as precursors M Putkonen, J Niinistö, K Kukli, T Sajavaara, M Karppinen, H Yamauchi, ...
Chemical Vapor Deposition 9 (4), 207-212, 2003
92 2003 Novel mixed alkylamido-cyclopentadienyl precursors for ALD of ZrO 2 thin films J Niinistö, K Kukli, M Kariniemi, M Ritala, M Leskelä, N Blasco, A Pinchart, ...
Journal of Materials Chemistry 18 (43), 5243-5247, 2008
89 2008 Atomic Layer Deposition of Ga2 O3 Films from a Dialkylamido-Based Precursor Dezelah, J Niinistö, K Arstila, L Niinistö, CH Winter
Chemistry of materials 18 (2), 471-475, 2006
87 2006 Structural and dielectric properties of thin J Niinistö, M Putkonen, L Niinistö, K Kukli, M Ritala, M Leskelä
Journal of applied physics 95 (1), 84-91, 2004
87 2004 Deposition of yttria-stabilized zirconia thin films by atomic layer epitaxy from β-diketonate and organometallic precursors M Putkonen, T Sajavaara, J Niinistö, LS Johansson, L Niinistö
Journal of Materials Chemistry 12 (3), 442-448, 2002
83 2002 Controlled growth of HfO 2 thin films by atomic layer deposition from cyclopentadienyl-type precursor and water J Niinistö, M Putkonen, L Niinistö, SL Stoll, K Kukli, T Sajavaara, M Ritala, ...
Journal of Materials Chemistry 15 (23), 2271-2275, 2005
81 2005 Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars JD Caldwell, OJ Glembocki, FJ Bezares, MI Kariniemi, JT Niinistö, ...
Optics express 19 (27), 26056-26064, 2011
79 2011 Growth and phase stabilization of HfO2 thin films by ALD using novel precursors J Niinistö, M Mäntymäki, K Kukli, L Costelle, E Puukilainen, M Ritala, ...
Journal of Crystal Growth 312 (2), 245-249, 2010
79 2010 Evaluation and Comparison of Novel Precursors for Atomic Layer Deposition of Nb2 O5 Thin Films T Blanquart, J Niinisto, M Heikkila, T Sajavaara, K Kukli, E Puukilainen, ...
Chemistry of materials 24 (6), 975-980, 2012
72 2012 
Jonas SundqvistSenior Scientist, Fraunhofer CNTZweryfikowany adres z cnt.fraunhofer.de
