| Lattice parameters of gallium nitride M Leszczynski, H Teisseyre, T Suski, I Grzegory, M Bockowski, J Jun, ... Applied Physics Letters 69 (1), 73-75, 1996 | 567 | 1996 |
| Towards the identification of the dominant donor in GaN P Perlin, T Suski, H Teisseyre, M Leszczynski, I Grzegory, J Jun, ... Physical review letters 75 (2), 296, 1995 | 411 | 1995 |
| Thermal expansion of gallium nitride M Leszczynski, T Suski, H Teisseyre, P Perlin, I Grzegory, J Jun, ... Journal of applied physics 76 (8), 4909-4911, 1994 | 294 | 1994 |
| Mechanism of yellow luminescence in GaN T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ... Applied physics letters 67 (15), 2188-2190, 1995 | 286 | 1995 |
| Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer H Teisseyre, P Perlin, T Suski, I Grzegory, S Porowski, J Jun, A Pietraszko, ... Journal of Applied Physics 76 (4), 2429-2434, 1994 | 251 | 1994 |
| Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties P Perlin, I Gorczyca, NE Christensen, I Grzegory, H Teisseyre, T Suski Physical Review B 45 (23), 13307, 1992 | 245 | 1992 |
| Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN F Tuomisto, K Saarinen, B Lucznik, I Grzegory, H Teisseyre, T Suski, ... Applied Physics Letters 86 (3), 2005 | 130 | 2005 |
| Lattice constants, thermal expansion and compressibility of gallium nitride M Leszczynski, T Suski, P Perlin, H Teisseyre, I Grzegory, M Bockowski, ... Journal of Physics D: Applied Physics 28 (4A), A149, 1995 | 105 | 1995 |
| Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells SP Łepkowski, H Teisseyre, T Suski, P Perlin, N Grandjean, J Massies Applied Physics Letters 79 (10), 1483-1485, 2001 | 92 | 2001 |
| The microstructure of gallium nitride monocrystals grown at high pressure M Leszczynski, I Grzegory, H Teisseyre, T Suski, M Bockowski, J Jun, ... Journal of crystal growth 169 (2), 235-242, 1996 | 80 | 1996 |
| High Quality Homoepitaxial GaN Grown by Molecular Beam Epitaxy with NH 3 on Surface Cracking MMM Mayer, APA Pelzmann, MKM Kamp, KJEKJ Ebeling, HTH Teisseyre, ... Japanese journal of applied physics 36 (12B), L1634, 1997 | 58 | 1997 |
| Amphoteric Be in GaN: Experimental evidence for switching between substitutional and interstitial lattice sites F Tuomisto, V Prozheeva, I Makkonen, TH Myers, M Bockowski, ... Physical Review Letters 119 (19), 196404, 2017 | 56 | 2017 |
| High resistivity GaN single crystalline substrates S Porowski, M Boćkowski, B Łucznik, I Grzegory, M Wroblewski, ... Acta Physica Polonica A 92 (5), 958-962, 1997 | 56 | 1997 |
| Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies H Teisseyre, T Suski, P Perlin, I Grzegory, M Leszczynski, M Bockowski, ... Physical Review B 62 (15), 10151, 2000 | 47 | 2000 |
| Free and bound excitons in GaN∕ AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (112¯ 0) direction H Teisseyre, C Skierbiszewski, B Łucznik, G Kamler, A Feduniewicz, ... Applied Physics Letters 86 (16), 2005 | 42 | 2005 |
| Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds M Amilusik, T Sochacki, B Lucznik, M Fijalkowski, J Smalc-Koziorowska, ... Journal of crystal growth 403, 48-54, 2014 | 37 | 2014 |
| Complete in-plane polarization anisotropy of the A exciton in unstrained A-plane GaN films P Misra, O Brandt, HT Grahn, H Teisseyre, M Siekacz, C Skierbiszewski, ... Applied Physics Letters 91 (14), 2007 | 37 | 2007 |
| High pressure fabrication and processing of GaN: Mg T Suski, J Jun, M Leszczynski, H Teisseyre, I Grzegory, S Porowski, ... Materials Science and Engineering: B 59 (1-3), 1-5, 1999 | 37 | 1999 |
| Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures P Corfdir, J Levrat, A Dussaigne, P Lefebvre, H Teisseyre, I Grzegory, ... Physical Review B—Condensed Matter and Materials Physics 83 (24), 245326, 2011 | 36 | 2011 |
| Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing T Suski, J Jun, M Leszczyński, H Teisseyre, S Strite, A Rockett, ... Journal of applied physics 84 (2), 1155-1157, 1998 | 35 | 1998 |
