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Bernd P Keller
Bernd P Keller
Cree Inc.
Zweryfikowany adres z cree.com
Tytuł
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Cytowane przez
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Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films
B Heying, XH Wu, S Keller, Y Li, D Kapolnek, BP Keller, SP DenBaars, ...
Applied physics letters 68 (5), 643-645, 1996
10991996
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
JF Muth, JH Lee, IK Shmagin, RM Kolbas, HC Casey Jr, BP Keller, ...
Applied Physics Letters 71 (18), 2572-2574, 1997
9431997
Very-high power density AlGaN/GaN HEMTs
YF Wu, D Kapolnek, JP Ibbetson, P Parikh, BP Keller, UK Mishra
IEEE Transactions on Electron Devices 48 (3), 586-590, 2001
7842001
Light emitting diodes including modifications for light extraction
DB Slater Jr, RC Glass, CM Swoboda, B Keller, J Ibbetson, B Thibeault, ...
US Patent 6,791,119, 2004
6632004
Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3
XH Wu, LM Brown, D Kapolnek, S Keller, B Keller, SP DenBaars, ...
Journal of applied physics 80 (6), 3228-3237, 1996
5671996
Wafer level phosphor coating method and devices fabricated utilizing method
A Chitnis, J Ibbetson, B Keller, DT Emerson, J Edmond, MJ Bergmann, ...
US Patent 9,159,888, 2015
4792015
Wafer level phosphor coating method and devices fabricated utilizing method
A Chitnis, J Ibbetson, A Chakraborty, EJ Tarsa, B Keller, J Seruto, Y Fu
US Patent 9,024,349, 2015
4562015
Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire
D Kapolnek, XH Wu, B Heying, S Keller, BP Keller, UK Mishra, ...
Applied Physics Letters 67 (11), 1541-1543, 1995
4481995
Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
YF Wu, BP Keller, S Keller, D Kapolnek, P Kozodoy, SP Denbaars, ...
Applied physics letters 69 (10), 1438-1440, 1996
4441996
Multiple component solid state white light
EJ Tarsa, M Dunn, B Keller
US Patent 7,005,679, 2006
4382006
Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same
NW Medendorp, M McClear, BP Keller, GR Brandes, RP LeToquin
US Patent 8,125,137, 2012
4282012
Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
S Keller, BP Keller, YF Wu, B Heying, D Kapolnek, JS Speck, UK Mishra, ...
Applied Physics Letters 68 (11), 1525-1527, 1996
3761996
Solid state lighting component
T Yuan, B Keller, J Ibbetson, E Tarsa, G Negley
US Patent 7,821,023, 2010
3702010
High Al-content AlGaN/GaN MODFETs for ultrahigh performance
YF Wu, BP Keller, P Fini, S Keller, TJ Jenkins, LT Kehias, SP Denbaars, ...
IEEE Electron Device Letters 19 (2), 50-53, 1998
3531998
GaN microwave electronics
UK Mishra, YF Wu, BP Keller, S Keller, SP Denbaars
IEEE transactions on microwave theory and techniques 46 (6), 756-761, 1998
3321998
Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN
XH Wu, D Kapolnek, EJ Tarsa, B Heying, S Keller, BP Keller, UK Mishra, ...
Applied Physics Letters 68 (10), 1371-1373, 1996
2881996
Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB
S Keller, YF Wu, G Parish, N Ziang, JJ Xu, BP Keller, SP DenBaars, ...
IEEE Transactions on Electron Devices 48 (3), 552-559, 2001
2702001
Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same
NW Medendorp, MT McClear, BP Keller, GR Brandes, RP LeToquin
US Patent 8,410,680, 2013
2552013
System for and method for closed loop electrophoretic deposition of phosphor materials on semiconductor devices
EJ Tarsa, M Leung, B Keller, R Underwood, M Youmans
US Patent 8,563,339, 2013
2472013
Solid state lighting component
T Yuan, B Keller, E Tarsa, J Ibbetson, F Morgan, K Dowling, I Lys
US Patent 9,793,247, 2017
2422017
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