| Charge-to-Spin Conversion by the Rashba-Edelstein Effect in 2D van der Waals Heterostructures up to Room Temperature TS Ghiasi, AA Kaverzin, PJ Blah, BJ van Wees Nano letters 19 (9), 2019 | 216 | 2019 |
| Large proximity-induced spin lifetime anisotropy in transition-metal dichalcogenide/graphene heterostructures TS Ghiasi, J Ingla-Aynés, AA Kaverzin, BJ Van Wees Nano letters 17 (12), 7528-7532, 2017 | 214 | 2017 |
| Electrical and thermal generation of spin currents by magnetic bilayer graphene TS Ghiasi, AA Kaverzin, AH Dismukes, DK de Wal, X Roy, BJ van Wees Nature nanotechnology 16 (7), 788-794, 2021 | 115 | 2021 |
| Symmetry regimes for circular photocurrents in monolayer MoSe2 J Quereda, TS Ghiasi, JS You, J van den Brink, BJ van Wees, ... Nature communications 9 (1), 3346, 2018 | 77 | 2018 |
| Observation of bright and dark exciton transitions in monolayer MoSe2 by photocurrent spectroscopy J Quereda, TS Ghiasi, FA Van Zwol, CH Van der Wal, BJ Van Wees 2D Materials 5 (1), 015004, 2017 | 33 | 2017 |
| Organic solar cell based on photosystem I pigment-protein complex, fabrication and optimization A Zeynali, TS Ghiasi, G Riazi, R Ajeian Organic Electronics 51, 341-348, 2017 | 27 | 2017 |
| Bilayer h-BN barriers for tunneling contacts in fully-encapsulated monolayer MoSe2 field-effect transistors TS Ghiasi, J Quereda, BJ van Wees 2D Materials 6 (1), 015002, 2018 | 25 | 2018 |
| The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors J Quereda, J Hidding, TS Ghiasi, BJ van Wees, CH van der Wal, ... npj 2D Materials and Applications 5 (1), 13, 2021 | 16 | 2021 |
| Spin injection by spin–charge coupling in proximity induced magnetic graphene AA Kaverzin, TS Ghiasi, AH Dismukes, X Roy, BJ Van Wees 2D Materials 9 (4), 045003, 2022 | 12 | 2022 |
| Semiconductor channel-mediated photodoping in h-BN encapsulated monolayer MoSe2 phototransistors J Quereda, TS Ghiasi, CH Van der Wal, BJ Van Wees 2D Materials 6 (2), 025040, 2019 | 12 | 2019 |
| Charge Transfer and Asymmetric Coupling of MoSe2 Valleys to the Magnetic Order of CrSBr C Serati de Brito, PE Faria Junior, TS Ghiasi, J Ingla-Aynés, CR Rabahi, ... Nano Letters 23 (23), 11073–11081, 2023 | 10 | 2023 |
| Specular electron focusing between gate-defined quantum point contacts in bilayer graphene J Ingla-Aynés, ALR Manesco, TS Ghiasi, S Volosheniuk, K Watanabe, ... Nano Letters 23 (12), 2023 | 7 | 2023 |
| Nitrogen-vacancy magnetometry of CrSBr by diamond membrane transfer TS Ghiasi, M Borst, S Kurdi, BG Simon, I Bertelli, C Boix-Constant, ... npj 2D Materials and Applications 7 (62), 2023 | 4 | 2023 |
| Ballistic Electron Source with Magnetically Controlled Valley Polarization in Bilayer Graphene J Ingla-Aynés, ALR Manesco, TS Ghiasi, K Watanabe, T Taniguchi, ... Physical review letters 133 (15), 156301, 2024 | 3 | 2024 |
| MoRe Electrodes with 10 nm Nanogaps for Electrical Contact to Atomically Precise Graphene Nanoribbons D Bouwmeester, TS Ghiasi, G Borin Barin, K Müllen, P Ruffieux, R Fasel, ... ACS applied nano materials 6 (15), 13935-13944, 2023 | 2 | 2023 |
| Quantum Spin Hall Effect in Magnetic Graphene TS Ghiasi, D Petrosyan, J Ingla-Aynés, T Bras, S Mañas-Valero, ... arXiv preprint arXiv:2312.07515, 2023 | 1 | 2023 |
| Towards fully two-dimensional spintronic devices AA Kaverzin, TS Ghiasi, AH Dismukes, X Roy, BJ van Wees arXiv preprint arXiv:2202.09972, 2022 | 1 | 2022 |
| Proximity-Induced Exchange Interaction and Prolonged Valley Lifetime in MoSe2/CrSBr Van-Der-Waals Heterostructure with Orthogonal Spin Textures A Beer, K Zollner, C Serati de Brito, PE Faria Junior, P Parzefall, ... ACS nano, 2024 | | 2024 |
| Data underlying the publication: Specular electron focusing between gate-defined quantum point contacts in bilayer graphene J Ingla Aynés, ALR Manesco, TS Ghiasi, S Volosheniuk, K Watanabe, ... (No Title), 2023 | | 2023 |
| Electron-jet collimation by electrostatically defined quantum point contacts in bilayer graphene J Ingla-Aynés, T Ghiasi, A Manesco, H van der Zant APS March Meeting Abstracts 2023, B20. 011, 2023 | | 2023 |
bart van weesprofessor of applied physics groningen universityZweryfikowany adres z rug.nl
