Mariusz Sochacki
Mariusz Sochacki
Warsaw University of Technology, Institute of Microelectronics and Optoelectronics
Verified email at imio.pw.edu.pl
Title
Cited by
Cited by
Year
Properties of Pt/4H-SiC Schottky diodes with interfacial layer at elevated temperatures
M Sochacki, A Kolendo, J Szmidt, A Werbowy
Solid-state electronics 49 (4), 585-590, 2005
522005
Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers
M D±browska-Szata, M Sochacki, J Szmidt
Solid-State Electronics 94, 56-60, 2014
392014
Influence of surface cleaning effects on properties of Schottky diodes on 4H–SiC
N Kwietniewski, M Sochacki, J Szmidt, M Guziewicz, E Kaminska, ...
Applied surface science 254 (24), 8106-8110, 2008
282008
Influence of annealing on reverse current of 4H–SiC Schottky diodes
M Sochacki, J Szmidt, M Bakowski, A Werbowy
Diamond and related materials 11 (3-6), 1263-1267, 2002
262002
Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts
A Taube, J Kaczmarski, R Kruszka, J Grochowski, K Kosiel, ...
Solid-State Electronics 111, 12-17, 2015
222015
Ta–Si contacts to n-SiC for high temperatures devices
M Guziewicz, A Piotrowska, E Kaminska, K Grasza, R Diduszko, A Stonert, ...
Materials Science and Engineering: B 135 (3), 289-293, 2006
192006
Pinned and unpinned epitaxial graphene layers on SiC studied by Raman spectroscopy
K Grodecki, JA Blaszczyk, W Strupinski, A Wysmolek, R Stępniewski, ...
Journal of Applied Physics 111 (11), 114307, 2012
172012
Technology and characterization of 4H-SiC pin junctions
A Kociubiński, M Duk, M Masłyk, N Kwietniewski, M Sochacki, M Borecki, ...
Photonics Applications in Astronomy, Communications, Industry, and High …, 2013
152013
Magnetic, optical and electrical characterization of SiC doped with scandium during the PVT growth
K Racka, A Avdonin, M Sochacki, E Tymicki, K Grasza, R Jakieła, ...
Journal of Crystal Growth 413, 86-93, 2015
142015
Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures
A Domanowska, M Miczek, R Ucka, M Matys, B Adamowicz, J Żywicki, ...
Applied surface science 258 (21), 8354-8359, 2012
132012
Silicon dioxide and silicon nitride as a passivation and edge termination for 4H-SiC Schottky diodes
M Sochacki, R Lukasiewicz, W Rzodkiewicz, A Werbowy, J Szmidt, ...
Diamond and related materials 14 (3-7), 1138-1141, 2005
132005
Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs
A Taube, M Sochacki, J Szmidt, E Kamińska, A Piotrowska
International Journal of Electronics and Telecommunications 60 (3), 253-258, 2014
112014
Dielectric films fabricated in plasma as passivation of 4H-SiC Schottky diodes
M Sochacki, J Szmidt
Thin solid films 446 (1), 106-110, 2004
102004
3D photodetecting structure with adjustable sensitivity ratio in UV–VIS range
A Kociubiński, M Borecki, M Duk, M Sochacki, ML Korwin-Pawlowski
Microelectronic Engineering 154, 48-52, 2016
92016
TiAl-based ohmic contacts on p-type SiC
M Mysliwiec, M Sochacki, R Kisiel, M Guziewicz, M Wzorek
Proceedings of the 2011 34th International Spring Seminar on Electronics …, 2011
92011
Electrical properties of isotype and anisotype ZnO/4H-SiC heterojunction diodes
A Taube, M Sochacki, N Kwietniewski, A Werbowy, S Gierałtowska, ...
Applied Physics Letters 110 (14), 143509, 2017
82017
Interface traps in Al/HfO2/SiO2/4H-SiC metal-insulator-semiconductor (MIS) structures studied by the thermally-stimulated current (TSC) technique
M Sochacki, K Krol, M Waskiewicz, K Racka, J Szmidt
Microelectronic Engineering 157, 46-51, 2016
82016
Thermal properties of SiC-ceramics substrate interface made by silver glass composition
R Kisiel, Z Szczepański, M Sochacki, M Chmielewski, M Guziewicz, ...
Proceedings of the 2011 34th International Spring Seminar on Electronics …, 2011
82011
Electronic properties of BaTiO3/4H-SiC interface
M Sochacki, P Firek, N Kwietniewski, J Szmidt, W Rzodkiewicz
Materials Science and Engineering: B 176 (4), 301-304, 2011
82011
Electronic properties of BaTiO3/4H-SiC interface
M Sochacki, P Firek, N Kwietniewski, J Szmidt, W Rzodkiewicz
Materials Science and Engineering: B 176 (4), 301-304, 2011
82011
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Articles 1–20