Allen Hsu
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Integrated Circuits Based on Bilayer MoS2 Transistors
H Wang, L Yu, YH Lee, Y Shi, A Hsu, ML Chin, LJ Li, M Dubey, J Kong, ...
Nano letters 12 (9), 4674-4680, 2012
Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition
KK Kim, A Hsu, X Jia, SM Kim, Y Shi, M Hofmann, D Nezich, ...
Nano letters 12 (1), 161-166, 2012
Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition
Y Shi, C Hamsen, X Jia, KK Kim, A Reina, M Hofmann, AL Hsu, K Zhang, ...
Nano letters 10 (10), 4134-4139, 2010
van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates
Y Shi, W Zhou, AY Lu, W Fang, YH Lee, AL Hsu, SM Kim, KK Kim, ...
Nano letters 12 (6), 2784-2791, 2012
Dielectric Screening of Excitons and Trions in Single-Layer MoS2
Y Lin, X Ling, L Yu, S Huang, AL Hsu, YH Lee, J Kong, MS Dresselhaus, ...
Nano letters 14 (10), 5569-5576, 2014
Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices
KK Kim, A Hsu, X Jia, SM Kim, Y Shi, M Dresselhaus, T Palacios, J Kong
ACS nano 6 (10), 8583-8590, 2012
Synthesis of large-area multilayer hexagonal boron nitride for high material performance
SM Kim, A Hsu, MH Park, SH Chae, SJ Yun, JS Lee, DH Cho, W Fang, ...
Nature communications 6 (1), 8662, 2015
Graphene-based ambipolar RF mixers
H Wang, A Hsu, J Wu, J Kong, T Palacios
IEEE Electron Device Letters 31 (9), 906-908, 2010
BN/graphene/BN transistors for RF applications
H Wang, T Taychatanapat, A Hsu, K Watanabe, T Taniguchi, ...
IEEE Electron Device Letters 32 (9), 1209-1211, 2011
Parallel stitching of two-dimensional materials
X Ling, Y Lin, Q Ma, Z Wang, Y Song, L Yu, S Huang, W Fang, X Zhang, ...
arXiv preprint arXiv:1512.04492, 2015
Synthesis of patched or stacked graphene and hBN flakes: a route to hybrid structure discovery
SM Kim, A Hsu, PT Araujo, YH Lee, T Palacios, M Dresselhaus, JC Idrobo, ...
Nano letters 13 (3), 933-941, 2013
Applications of graphene devices in RF communications
T Palacios, A Hsu, H Wang
IEEE Communications Magazine 48 (6), 122-128, 2010
The effect of copper pre-cleaning on graphene synthesis
SM Kim, A Hsu, YH Lee, M Dresselhaus, T Palacios, KK Kim, J Kong
Nanotechnology 24 (36), 365602, 2013
Impact of graphene interface quality on contact resistance and RF device performance
A Hsu, H Wang, KK Kim, J Kong, T Palacios
IEEE Electron Device Letters 32 (8), 1008-1010, 2011
Rapid identification of stacking orientation in isotopically labeled chemical-vapor grown bilayer graphene by Raman spectroscopy
W Fang, AL Hsu, R Caudillo, Y Song, AG Birdwell, E Zakar, M Kalbac, ...
Nano letters 13 (4), 1541-1548, 2013
Impact of chlorine functionalization on high-mobility chemical vapor deposition grown graphene
X Zhang, A Hsu, H Wang, Y Song, J Kong, MS Dresselhaus, T Palacios
ACS nano 7 (8), 7262-7270, 2013
Asymmetric growth of bilayer graphene on copper enclosures using low-pressure chemical vapor deposition
W Fang, AL Hsu, Y Song, AG Birdwell, M Amani, M Dubey, ...
ACS nano 8 (6), 6491-6499, 2014
Compact virtual-source current–voltage model for top-and back-gated graphene field-effect transistors
H Wang, A Hsu, J Kong, DA Antoniadis, T Palacios
IEEE Transactions on Electron Devices 58 (5), 1523-1533, 2011
Nanowire Channel InAlN/GaN HEMTs With High Linearity ofand
DS Lee, H Wang, A Hsu, M Azize, O Laboutin, Y Cao, JW Johnson, ...
IEEE electron device letters 34 (8), 969-971, 2013
pH sensing properties of graphene solution-gated field-effect transistors
B Mailly-Giacchetti, A Hsu, H Wang, V Vinciguerra, F Pappalardo, ...
Journal of Applied Physics 114 (8), 2013
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