| Gate driver design for 1.7 kV SiC MOSFET module with Rogowski current sensor for shortcircuit protection J Wang, Z Shen, C DiMarino, R Burgos, D Boroyevich 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 516-523, 2016 | 131 | 2016 |
| High-temperature silicon carbide: characterization of state-of-the-art silicon carbide power transistors CM DiMarino, R Burgos, B Dushan IEEE Industrial Electronics Magazine 9 (3), 19-30, 2015 | 103 | 2015 |
| 10-kV SiC MOSFET power module with reduced common-mode noise and electric field CM DiMarino, B Mouawad, CM Johnson, D Boroyevich, R Burgos IEEE Transactions on Power Electronics 35 (6), 6050-6060, 2019 | 101 | 2019 |
| High-temperature characterization and comparison of 1.2 kV SiC power MOSFETs C DiMarino, Z Chen, M Danilovic, D Boroyevich, R Burgos, P Mattavelli 2013 IEEE Energy Conversion Congress and Exposition, 3235-3242, 2013 | 85 | 2013 |
| Medium-voltage impedance measurement unit for assessing the system stability of electric ships M Jakšić, Z Shen, I Cvetković, D Boroyevich, R Burgos, C DiMarino, ... IEEE Transactions on Energy Conversion 32 (2), 829-841, 2017 | 73 | 2017 |
| Design and experimental validation of a wire-bond-less 10-kV SiC MOSFET power module C DiMarino, B Mouawad, CM Johnson, M Wang, YS Tan, GQ Lu, ... IEEE Journal of emerging and selected topics in power electronics 8 (1), 381-394, 2019 | 63 | 2019 |
| 10 kV, 120 a SiC MOSFET modules for a power electronics building block (PEBB) C DiMarino, I Cvetkovic, Z Shen, R Burgos, D Boroyevich 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, 55-58, 2014 | 56 | 2014 |
| Characterization and comparison of 1.2 kV SiC power semiconductor devices C DiMarino, Z Chen, D Boroyevich, R Burgos, P Mattavelli 2013 15th European Conference on Power Electronics and Applications (EPE), 1-10, 2013 | 43 | 2013 |
| Modular scalable medium-voltage impedance measurement unit using 10 kV SiC MOSFET PEBBs I Cvetkovic, Z Shen, M Jaksic, C DiMarino, F Chen, D Boroyevich, ... 2015 IEEE Electric Ship Technologies Symposium (ESTS), 326-331, 2015 | 41 | 2015 |
| Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter S Mocevic, J Yu, B Fan, K Sun, Y Xu, J Stewart, Y Rong, H Song, ... IEnergy 1 (1), 100-113, 2022 | 36 | 2022 |
| Low thermal resistance (0.5 K/W) Ga₂O₃ Schottky rectifiers with double-side packaging B Wang, M Xiao, J Knoll, C Buttay, K Sasaki, GQ Lu, C Dimarino, Y Zhang IEEE Electron Device Letters 42 (8), 1132-1135, 2021 | 35 | 2021 |
| A high-speed gate driver with PCB-embedded Rogowski switch-current sensor for a 10 kV, 240 A, SiC MOSFET module J Wang, S Mocevic, Y Xu, C DiMarino, R Burgos, D Boroyevich 2018 IEEE Energy Conversion Congress and Exposition (ECCE), 5489-5494, 2018 | 35 | 2018 |
| Characterization and prediction of the avalanche performance of 1.2 kV SiC MOSFETs C DiMarino, B Hull 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015 | 34 | 2015 |
| Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective Y Qin, B Albano, J Spencer, JS Lundh, B Wang, C Buttay, M Tadjer, ... Journal of Physics D: Applied Physics 56 (9), 093001, 2023 | 33 | 2023 |
| Design of a novel, high-density, high-speed 10 kV SiC MOSFET module C DiMarino, M Johnson, B Mouawad, J Li, D Boroyevich, R Burgos, ... 2017 IEEE Energy Conversion Congress and Exposition (ECCE), 4003-4010, 2017 | 32 | 2017 |
| Surge current capability of ultra-wide-bandgap Ga2O3 Schottky diodes C Buttay, HY Wong, B Wang, M Xiao, C Dimarino, Y Zhang Microelectronics Reliability 114, 113743, 2020 | 31 | 2020 |
| A high-density, high-efficiency 1.2 kV SiC MOSFET module and gate drive circuit C DiMarino, W Zhang, N Haryani, Q Wang, R Burgos, D Boroyevich 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016 | 31 | 2016 |
| Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system B Mouawad, R Skuriat, J Li, CM Johnson, C DiMarino 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 30 | 2018 |
| A high-power-density, high-speed gate driver for a 10 kV SiC MOSFET module C DiMarino, J Wang, R Burgos, D Boroyevich 2017 IEEE Electric Ship Technologies Symposium (ESTS), 629-634, 2017 | 29 | 2017 |
| A wire-bond-less 10 kV SiC MOSFET power module with reduced common-mode noise and electric field C Dimarino, B Mouawad, K Li, Y Xu, M Johnson, D Boroyevich, R Burgos PCIM Europe 2018; International Exhibition and Conference for Power …, 2018 | 26 | 2018 |
Rolando BurgosProfessor at Virginia Tech, Center for Power Electronics Systems (CPES)Zweryfikowany adres z vt.edu
