Optical and magnetic properties of Eu-doped GaN J Hite, GT Thaler, R Khanna, CR Abernathy, SJ Pearton, JH Park, ...
Applied physics letters 89 (13), 2006
97 2006 Annealing of dry etch damage in metallized and bare (-201) Ga2O3 J Yang, F Ren, R Khanna, K Bevlin, D Geerpuram, LC Tung, J Lin, ...
Journal of Vacuum Science & Technology B 35 (5), 2017
74 2017 Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes J Yang, S Ahn, F Ren, R Khanna, K Bevlin, D Geerpuram, SJ Pearton, ...
Applied Physics Letters 110 (14), 2017
67 2017 Inductively coupled plasma etching of bulk, single-crystal Ga2O3 J Yang, S Ahn, F Ren, S Pearton, R Khanna, K Bevlin, D Geerpuram, ...
Journal of Vacuum Science & Technology B 35 (3), 2017
52 2017 Effects of high-dose 40MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes R Khanna, KK Allums, CR Abernathy, SJ Pearton, J Kim, F Ren, ...
Applied physics letters 85 (15), 3131-3133, 2004
40 2004 High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes R Khanna, SY Han, SJ Pearton, D Schoenfeld, WV Schoenfeld, F Ren
Applied Physics Letters 87 (21), 2005
39 2005 Thermal degradation of electrical properties and morphology of bulk single-crystal ZnO surfaces R Khanna, K Ip, YW Heo, DP Norton, SJ Pearton, F Ren
Applied physics letters 85 (16), 3468-3470, 2004
36 2004 Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO W Lim, L Voss, R Khanna, BP Gila, DP Norton, SJ Pearton, F Ren
Applied Surface Science 253 (3), 1269-1273, 2006
31 2006 W2B-based rectifying contacts to n-GaN R Khanna, SJ Pearton, F Ren, I Kravchenko, CJ Kao, GC Chi
Applied Physics Letters 87 (5), 2005
26 2005 Ohmic contacts to p-type GaN based on TaN, TiN, and ZrN LF Voss, L Stafford, R Khanna, BP Gila, CR Abernathy, SJ Pearton, F Ren, ...
Applied physics letters 90 (21), 2007
24 2007 Dry etching of bulk single-crystal ZnO in CH4/H2-based plasma chemistries W Lim, L Voss, R Khanna, BP Gila, DP Norton, SJ Pearton, F Ren
Applied Surface Science 253 (2), 889-894, 2006
23 2006 Proton irradiation of ZnO schottky diodes R Khanna, K Ip, KK Allums, K Baik, CR Abernathy, SJ Pearton, YW Heo, ...
Journal of electronic materials 34, 395-398, 2005
22 2005 Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO JS Wright, R Khanna, LF Voss, L Stafford, BP Gila, DP Norton, SJ Pearton, ...
Applied surface science 253 (8), 3766-3772, 2007
21 2007 Stability of Ti/Al/ZrB2/Ti/Au ohmic contacts on n-GaN R Khanna, SJ Pearton, F Ren, II Kravchenko
Applied Surface Science 253 (4), 2340-2344, 2006
21 2006 Improved thermally stable ohmic contacts on p-GaN based on W2B L Voss, R Khanna, SJ Pearton, F Ren, I Kravchenko
Applied physics letters 88 (1), 2006
21 2006 Comparison of electrical and reliability performances of -, -, and -based Ohmic contacts on R Khanna, SJ Pearton, F Ren, II Kravchenko
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
19 2006 Use of TiB2 diffusion barriers for Ni/Au ohmic contacts on p-GaN L Voss, R Khanna, SJ Pearton, F Ren, II Kravchenko
Applied surface science 253 (3), 1255-1259, 2006
17 2006 ZrB2 Schottky diode contacts on n-GaN R Khanna, K Ramani, V Cracium, R Singh, SJ Pearton, F Ren, ...
Applied Surface Science 253 (4), 2315-2319, 2006
16 2006 Properties and annealing stability of Fe doped semi‐insulating GaN structures AY Polyakov, NB Smirnov, AV Govorkov, AA Shlensky, K McGuire, ...
physica status solidi (c) 2 (7), 2476-2479, 2005
15 2005 Thermal stability of Ohmic contacts to InN R Khanna, BP Gila, L Stafford, SJ Pearton, F Ren, II Kravchenko, ...
Applied physics letters 90 (16), 2007
12 2007