didier stievenard
didier stievenard
Zweryfikowany adres z iemn.univ-lille1.fr
Cytowane przez
Cytowane przez
Native defects in gallium arsenide
JC Bourgoin, HJ Von Bardeleben, D Stievenard
Journal of applied physics 64 (9), R65-R92, 1988
Identification of a defect in a semiconductor: EL2 in GaAs
HJ Von Bardeleben, D Stievenard, D Deresmes, A Huber, JC Bourgoin
Physical Review B 34 (10), 7192, 1986
Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires
VG Dubrovskii, NV Sibirev, GE Cirlin, IP Soshnikov, WH Chen, R Larde, ...
Physical Review B—Condensed Matter and Materials Physics 79 (20), 205316, 2009
Nanooxidation using a scanning probe microscope: An analytical model based on field induced oxidation
D Stievenard, PA Fontaine, E Dubois
Applied Physics Letters 70 (24), 3272-3274, 1997
Synthesis and characterization of the electronic and electrochemical properties of thienylenevinylene oligomers with multinanometer dimensions
I Jestin, P Frère, N Mercier, E Levillain, D Stievenard, J Roncali
Journal of the American Chemical Society 120 (32), 8150-8158, 1998
Characterization of scanning tunneling microscopy and atomic force microscopy-based techniques for nanolithography on hydrogen-passivated silicon
PA Fontaine, E Dubois, D Stievenard
Journal of applied physics 84 (4), 1776-1781, 1998
Behavior of electron-irradiation-induced defects in GaAs
D Stievenard, X Boddaert, JC Bourgoin, HJ Von Bardeleben
Physical Review B 41 (8), 5271, 1990
Are electrical properties of an aluminum–porous silicon junction governed by dangling bonds?
D Stievenard, D Deresmes
Applied physics letters 67 (11), 1570-1572, 1995
Identification of EL2 in GaAs
HJ Von Bardeleben, D Stievenard, JC Bourgoin, A Huber
Applied physics letters 47 (9), 970-972, 1985
Imaging the wave-function amplitudes in cleaved semiconductor quantum boxes
B Grandidier, YM Niquet, B Legrand, JP Nys, C Priester, D Stiévenard, ...
Physical Review Letters 85 (5), 1068, 2000
Nanooxidation of silicon with an atomic force microscope: A pulsed voltage technique
B Legrand, D Stievenard
Applied physics letters 74 (26), 4049-4051, 1999
Irradiation-induced defects in p-type GaAs
D Stievenard, X Boddaert, JC Bourgoin
Physical Review B 34 (6), 4048, 1986
Scanning tunneling microscopy and scanning tunneling spectroscopy of self-assembled InAs quantum dots
B Legrand, B Grandidier, JP Nys, D Stievenard, JM Gérard, ...
Applied physics letters 73 (1), 96-98, 1998
Atomic-scale study of GaMnAs/GaAs layers
B Grandidier, JP Nys, C Delerue, D Stievenard, Y Higo, M Tanaka
Applied Physics Letters 77 (24), 4001-4003, 2000
Electric force microscopy of individually charged nanoparticles on conductors: an analytical model for quantitative charge imaging
T Mélin, H Diesinger, D Deresmes, D Stiévenard
Physical Review B 69 (3), 035321, 2004
Defects in porous p-type Si: An electron-paramagnetic-resonance study
HJ Von Bardeleben, D Stievenard, A Grosman, C Ortega, J Siejka
Physical Review B 47 (16), 10899, 1993
Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs
G Mahieu, B Grandidier, D Deresmes, JP Nys, D Stiévenard, P Ebert
Physical review letters 94 (2), 026407, 2005
Silicon surface nano-oxidation using scanning probe microscopy
D Stiévenard, B Legrand
Progress in surface science 81 (2-3), 112-140, 2006
Novel insights into the charge storage mechanism in pseudocapacitive vanadium nitride thick films for high-performance on-chip micro-supercapacitors
K Robert, D Stiévenard, D Deresmes, C Douard, A Iadecola, D Troadec, ...
Energy & Environmental Science 13 (3), 949-957, 2020
Charge injection in individual silicon nanoparticles deposited on a conductive substrate
T Melin, D Deresmes, D Stiévenard
Applied physics letters 81 (26), 5054-5056, 2002
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