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Thomas Schäpers
Thomas Schäpers
Professor in Physics, Forschungszentrum Jülich
Zweryfikowany adres z fz-juelich.de - Strona główna
Tytuł
Cytowane przez
Cytowane przez
Rok
Experimental and theoretical approach to spin splitting in modulation-doped As/InP quantum wells for B→0
G Engels, J Lange, T Schäpers, H Lüth
Physical Review B 55 (4), R1958, 1997
6941997
Effect of the heterointerface on the spin splitting in modulation doped quantum wells for
T Schäpers, G Engels, J Lange, T Klocke, M Hollfelder, H Lüth
Journal of applied physics 83 (8), 4324-4333, 1998
3701998
Hall effect measurements on InAs nanowires
C Blömers, T Grap, MI Lepsa, J Moers, S Trellenkamp, D Grützmacher, ...
Applied physics letters 101 (15), 2012
1272012
Spin-orbit coupling and phase coherence in InAs nanowires
S Estévez Hernández, M Akabori, K Sladek, C Volk, S Alagha, ...
Physical Review B—Condensed Matter and Materials Physics 82 (23), 235303, 2010
1222010
Superconductor/semiconductor junctions
T Schäpers
Springer Science & Business Media, 2001
1092001
Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures
M Eschbach, E Młyńczak, J Kellner, J Kampmeier, M Lanius, E Neumann, ...
Nature communications 6 (1), 8816, 2015
1082015
Effect of Rashba spin-orbit coupling on magnetotransport in quantum wire structures
T Schäpers, J Knobbe, VA Guzenko
Physical Review B 69 (23), 235323, 2004
1042004
Signatures of interaction-induced helical gaps in nanowire quantum point contacts
S Heedt, N Traverso Ziani, F Crépin, W Prost, S Trellenkamp, J Schubert, ...
Nature physics 13 (6), 563-567, 2017
972017
Molecular beam epitaxy growth of GaAs/InAs core–shell nanowires and fabrication of InAs nanotubes
T Rieger, M Luysberg, T Schäpers, D Grützmacher, MI Lepsa
Nano letters 12 (11), 5559-5564, 2012
952012
Selective area growth and stencil lithography for in situ fabricated quantum devices
P Schüffelgen, D Rosenbach, C Li, TW Schmitt, M Schleenvoigt, AR Jalil, ...
Nature nanotechnology 14 (9), 825-831, 2019
942019
Flux quantization effects in InN nanowires
T Richter, C Blömers, H Lüth, R Calarco, M Indlekofer, M Marso, ...
Nano letters 8 (9), 2834-2838, 2008
942008
Electronic phase coherence in InAs nanowires
C Blomers, MI Lepsa, M Luysberg, D Grutzmacher, H Luth, T Schapers
Nano letters 11 (9), 3550-3556, 2011
902011
Interference ferromagnet/semiconductor/ferromagnet spin field-effect transistor
T Schäpers, J Nitta, HB Heersche, H Takayanagi
Physical Review B 64 (12), 125314, 2001
822001
Effect of Si-doping on InAs nanowire transport and morphology
S Wirths, K Weis, A Winden, K Sladek, C Volk, S Alagha, TE Weirich, ...
Journal of applied physics 110 (5), 2011
802011
Suppression of weak antilocalization in narrow quantum wires
T Schäpers, VA Guzenko, MG Pala, U Zülicke, M Governale, J Knobbe, ...
Physical Review B 74 (8), 081301, 2006
792006
Self-catalyzed VLS grown InAs nanowires with twinning superlattices
T Grap, T Rieger, C Blömers, T Schäpers, D Grützmacher, MI Lepsa
Nanotechnology 24 (33), 335601, 2013
762013
Growth, characterization, and transport properties of ternary (Bi1− xSbx) 2Te3 topological insulator layers
C Weyrich, M Drögeler, J Kampmeier, M Eschbach, G Mussler, ...
Journal of Physics: Condensed Matter 28 (49), 495501, 2016
752016
Weak antilocalization in a polarization-doped AlxGa1− xN∕ GaN heterostructure with single subband occupation
N Thillosen, T Schäpers, N Kaluza, H Hardtdegen, VA Guzenko
Applied physics letters 88 (2), 2006
732006
Magnetosubbands of semiconductor quantum wires with Rashba spin-orbit coupling
J Knobbe, T Schäpers
Physical Review B 71 (3), 035311, 2005
692005
Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires
C Blömers, T Rieger, P Zellekens, F Haas, MI Lepsa, H Hardtdegen, ...
Nanotechnology 24 (3), 035203, 2012
662012
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