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Daniel Piedra
Daniel Piedra
Graduate Student, EECS, MIT
Zweryfikowany adres z mit.edu
Tytuł
Cytowane przez
Cytowane przez
Rok
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
6662018
GaN-on-Si vertical Schottky and pn diodes
Y Zhang, M Sun, D Piedra, M Azize, X Zhang, T Fujishima, T Palacios
IEEE electron device letters 35 (6), 618-620, 2014
1462014
Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors
Y Zhang, M Sun, Z Liu, D Piedra, HS Lee, F Gao, T Fujishima, T Palacios
IEEE Transactions on Electron Devices 60 (7), 2224-2230, 2013
1332013
3000-V 4.3- InAlN/GaN MOSHEMTs With AlGaN Back Barrier
HS Lee, D Piedra, M Sun, X Gao, S Guo, T Palacios
IEEE electron device letters 33 (7), 982-984, 2012
1282012
Vertical GaN junction barrier Schottky rectifiers by selective ion implantation
Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
1142017
Origin and control of OFF-state leakage current in GaN-on-Si vertical diodes
Y Zhang, M Sun, HY Wong, Y Lin, P Srivastava, C Hatem, M Azize, ...
IEEE Transactions on Electron Devices 62 (7), 2155-2161, 2015
1132015
Materials and processing issues in vertical GaN power electronics
J Hu, Y Zhang, M Sun, D Piedra, N Chowdhury, T Palacios
Materials Science in Semiconductor Processing 78, 75-84, 2018
992018
Large-area 1.2-kV GaN vertical power FinFETs with a record switching figure of merit
Y Zhang, M Sun, J Perozek, Z Liu, A Zubair, D Piedra, N Chowdhury, ...
IEEE Electron Device Letters 40 (1), 75-78, 2018
792018
A technology overview of the powerchip development program
M Araghchini, J Chen, V Doan-Nguyen, DV Harburg, D Jin, J Kim, MS Kim, ...
IEEE Transactions on Power Electronics 28 (9), 4182-4201, 2013
792013
1200 V GaN vertical fin power field-effect transistors
Y Zhang, M Sun, D Piedra, J Hu, Z Liu, Y Lin, X Gao, K Shepard, ...
2017 IEEE International Electron Devices Meeting (IEDM), 9.2. 1-9.2. 4, 2017
782017
Trench formation and corner rounding in vertical GaN power devices
Y Zhang, M Sun, Z Liu, D Piedra, J Hu, X Gao, T Palacios
Applied Physics Letters 110 (19), 193506, 2017
782017
High-performance 500 V quasi-and fully-vertical GaN-on-Si pn diodes
Y Zhang, D Piedra, M Sun, J Hennig, A Dadgar, L Yu, T Palacios
IEEE Electron Device Letters 38 (2), 248-251, 2016
682016
Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings
Y Zhang, M Sun, Z Liu, D Piedra, M Pan, X Gao, Y Lin, A Zubair, L Yu, ...
2016 IEEE International Electron Devices Meeting (IEDM), 10.2. 1-10.2. 4, 2016
482016
Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment
T Fujishima, S Joglekar, D Piedra, HS Lee, Y Zhang, A Uedono, ...
Applied Physics Letters 103 (8), 083508, 2013
472013
Comparative breakdown study of mesa-and ion-implantation-isolated AlGaN/GaN high-electron-mobility transistors on Si substrate
M Sun, HS Lee, B Lu, D Piedra, T Palacios
Applied Physics Express 5 (7), 074202, 2012
432012
AlN metal–semiconductor field-effect transistors using Si-ion implantation
H Okumura, S Suihkonen, J Lemettinen, A Uedono, Y Zhang, D Piedra, ...
Japanese Journal of Applied Physics 57 (4S), 04FR11, 2018
362018
Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level Vtengineering for transconductance compensation
S Joglekar, U Radhakrishna, D Piedra, D Antoniadis, T Palacios
2017 IEEE International Electron Devices Meeting (IEDM), 25.3. 1-25.3. 4, 2017
362017
Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes
Y Zhang, M Sun, D Piedra, J Hennig, A Dadgar, T Palacios
Applied Physics Letters 111 (16), 163506, 2017
312017
Impact of Al2O3Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility Transistors
S Joglekar, M Azize, EJ Jones, D Piedra, S Gradečak, T Palacios
IEEE Transactions on Electron Devices 63 (1), 318-325, 2015
312015
High voltage GaN HEMT compact model: Experimental verification, field plate optimization and charge trapping
U Radhakrishna, D Piedra, Y Zhang, T Palacios, D Antoniadis
2013 IEEE International Electron Devices Meeting, 32.7. 1-32.7. 4, 2013
302013
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