The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
666 2018 GaN-on-Si vertical Schottky and pn diodes Y Zhang, M Sun, D Piedra, M Azize, X Zhang, T Fujishima, T Palacios
IEEE electron device letters 35 (6), 618-620, 2014
146 2014 Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors Y Zhang, M Sun, Z Liu, D Piedra, HS Lee, F Gao, T Fujishima, T Palacios
IEEE Transactions on Electron Devices 60 (7), 2224-2230, 2013
133 2013 3000-V 4.3- HS Lee, D Piedra, M Sun, X Gao, S Guo, T Palacios
IEEE electron device letters 33 (7), 982-984, 2012
128 2012 Vertical GaN junction barrier Schottky rectifiers by selective ion implantation Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
114 2017 Origin and control of OFF-state leakage current in GaN-on-Si vertical diodes Y Zhang, M Sun, HY Wong, Y Lin, P Srivastava, C Hatem, M Azize, ...
IEEE Transactions on Electron Devices 62 (7), 2155-2161, 2015
113 2015 Materials and processing issues in vertical GaN power electronics J Hu, Y Zhang, M Sun, D Piedra, N Chowdhury, T Palacios
Materials Science in Semiconductor Processing 78, 75-84, 2018
99 2018 Large-area 1.2-kV GaN vertical power FinFETs with a record switching figure of merit Y Zhang, M Sun, J Perozek, Z Liu, A Zubair, D Piedra, N Chowdhury, ...
IEEE Electron Device Letters 40 (1), 75-78, 2018
79 2018 A technology overview of the powerchip development program M Araghchini, J Chen, V Doan-Nguyen, DV Harburg, D Jin, J Kim, MS Kim, ...
IEEE Transactions on Power Electronics 28 (9), 4182-4201, 2013
79 2013 1200 V GaN vertical fin power field-effect transistors Y Zhang, M Sun, D Piedra, J Hu, Z Liu, Y Lin, X Gao, K Shepard, ...
2017 IEEE International Electron Devices Meeting (IEDM), 9.2. 1-9.2. 4, 2017
78 2017 Trench formation and corner rounding in vertical GaN power devices Y Zhang, M Sun, Z Liu, D Piedra, J Hu, X Gao, T Palacios
Applied Physics Letters 110 (19), 193506, 2017
78 2017 High-performance 500 V quasi-and fully-vertical GaN-on-Si pn diodes Y Zhang, D Piedra, M Sun, J Hennig, A Dadgar, L Yu, T Palacios
IEEE Electron Device Letters 38 (2), 248-251, 2016
68 2016 Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings Y Zhang, M Sun, Z Liu, D Piedra, M Pan, X Gao, Y Lin, A Zubair, L Yu, ...
2016 IEEE International Electron Devices Meeting (IEDM), 10.2. 1-10.2. 4, 2016
48 2016 Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment T Fujishima, S Joglekar, D Piedra, HS Lee, Y Zhang, A Uedono, ...
Applied Physics Letters 103 (8), 083508, 2013
47 2013 Comparative breakdown study of mesa-and ion-implantation-isolated AlGaN/GaN high-electron-mobility transistors on Si substrate M Sun, HS Lee, B Lu, D Piedra, T Palacios
Applied Physics Express 5 (7), 074202, 2012
43 2012 AlN metal–semiconductor field-effect transistors using Si-ion implantation H Okumura, S Suihkonen, J Lemettinen, A Uedono, Y Zhang, D Piedra, ...
Japanese Journal of Applied Physics 57 (4S), 04FR11, 2018
36 2018 Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level Vt engineering for transconductance compensation S Joglekar, U Radhakrishna, D Piedra, D Antoniadis, T Palacios
2017 IEEE International Electron Devices Meeting (IEDM), 25.3. 1-25.3. 4, 2017
36 2017 Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes Y Zhang, M Sun, D Piedra, J Hennig, A Dadgar, T Palacios
Applied Physics Letters 111 (16), 163506, 2017
31 2017 Impact of Al2 O3 Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility Transistors S Joglekar, M Azize, EJ Jones, D Piedra, S Gradečak, T Palacios
IEEE Transactions on Electron Devices 63 (1), 318-325, 2015
31 2015 High voltage GaN HEMT compact model: Experimental verification, field plate optimization and charge trapping U Radhakrishna, D Piedra, Y Zhang, T Palacios, D Antoniadis
2013 IEEE International Electron Devices Meeting, 32.7. 1-32.7. 4, 2013
30 2013 