Dave Reid
Dave Reid
Zweryfikowany adres z synopsys.com
Tytuł
Cytowane przez
Cytowane przez
Rok
Analysis of threshold voltage distribution due to random dopants: A 100 000-sample 3-D simulation study
D Reid, C Millar, G Roy, S Roy, A Asenov
IEEE Transactions on Electron Devices 56 (10), 2255-2263, 2009
812009
Accurate statistical description of random dopant-induced threshold voltage variability
C Millar, D Reid, G Roy, S Roy, A Asenov
IEEE Electron Device Letters 29 (8), 946-948, 2008
802008
Understanding LER-Induced MOSFETVariability—Part I: Three-Dimensional Simulation of Large Statistical Samples
D Reid, C Millar, S Roy, A Asenov
IEEE transactions on electron devices 57 (11), 2801-2807, 2010
502010
Advanced simulation of statistical variability and reliability in nano CMOS transistors
A Asenov, S Roy, RA Brown, G Roy, C Alexander, C Riddet, C Millar, ...
2008 IEEE International Electron Devices Meeting, 1-1, 2008
432008
Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review
L Gerrer, J Ding, SM Amoroso, F Adamu-Lema, R Hussin, D Reid, C Millar, ...
Microelectronics Reliability 54 (4), 682-697, 2014
342014
Experimental implementation of optimal WLAN channel selection without communication
D Malone, P Clifford, D Reid, DJ Leith
2007 2nd IEEE International Symposium on New Frontiers in Dynamic Spectrum …, 2007
242007
Simulation based transistor-SRAM co-design in the presence of statistical variability and reliability
A Asenov, B Cheng, X Wang, AR Brown, D Reid, C Millar, C Alexander
2013 IEEE International Electron Devices Meeting, 33.1. 1-33.1. 4, 2013
222013
Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology
L Gerrer, SM Amoroso, P Asenov, J Ding, B Cheng, F Adamu-Lema, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 3A. 2.1-3A. 2.5, 2013
202013
Understanding LER-induced statistical variability: A 35,000 sample 3D simulation study
D Reid, C Millar, G Roy, S Roy, A Asenov
2009 Proceedings of the European Solid State Device Research Conference, 423-426, 2009
202009
Simulation study of the impact of quantum confinement on the electrostatically driven performance of n-type nanowire transistors
Y Wang, T Al-Ameri, X Wang, VP Georgiev, E Towie, SM Amoroso, ...
IEEE Transactions on Electron Devices 62 (10), 3229-3236, 2015
192015
Understanding LER-Induced MOSFETVariability—Part II: Reconstructing the Distribution
D Reid, C Millar, S Roy, A Asenov
IEEE transactions on electron devices 57 (11), 2808-2813, 2010
192010
FinFET centric variability-aware compact model extraction and generation technology supporting DTCO
X Wang, B Cheng, D Reid, A Pender, P Asenov, C Millar, A Asenov
IEEE Transactions on Electron Devices 62 (10), 3139-3146, 2015
182015
The evolution of standard cell libraries for future technology nodes
JA Walker, JA Hilder, D Reid, A Asenov, S Roy, C Millar, AM Tyrrell
Genetic Programming and Evolvable Machines 12 (3), 235-256, 2011
182011
Modelling circuit performance variations due to statistical variability: Monte Carlo static timing analysis
M Merrett, P Asenov, Y Wang, M Zwolinski, D Reid, C Millar, S Roy, Z Liu, ...
2011 Design, Automation & Test in Europe, 1-4, 2011
162011
Accurate simulation of transistor-level variability for the purposes of TCAD-based device-technology cooptimization
L Gerrer, AR Brown, C Millar, R Hussin, SM Amoroso, B Cheng, D Reid, ...
IEEE Transactions on Electron Devices 62 (6), 1739-1745, 2015
152015
Statistical enhancement of combined simulations of RDD and LER variability: What can simulation of a 105 sample teach us?
D Reid, C Millar, G Roy, S Roy, A Asenov
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
152009
Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET
U Kovac, D Reid, C Millar, G Roy, S Roy, A Asenov
Microelectronics Reliability 48 (8-9), 1572-1575, 2008
152008
Hot carrier aging and its variation under use-bias: Kinetics, prediction, impact on Vdd and SRAM
M Duan, JF Zhang, A Manut, Z Ji, W Zhang, A Asenov, L Gerrer, D Reid, ...
2015 IEEE International Electron Devices Meeting (IEDM), 20.4. 1-20.4. 4, 2015
142015
Combining process and statistical variability in the evaluation of the effectiveness of corners in digital circuit parametric yield analysis
P Asenov, NA Kamsani, D Reid, C Millar, S Roy, A Asenov
2010 Proceedings of the European Solid State Device Research Conference, 130-133, 2010
142010
Statistical Enhancement of the Evaluation of Combined RDD- and LER-InducedVariability: Lessons FromSample Simulations
D Reid, C Millar, S Roy, A Asenov
IEEE transactions on electron devices 58 (8), 2257-2265, 2011
132011
Nie można teraz wykonać tej operacji. Spróbuj ponownie później.
Prace 1–20