Accurate statistical description of random dopant-induced threshold voltage variability C Millar, D Reid, G Roy, S Roy, A Asenov
IEEE Electron Device Letters 29 (8), 946-948, 2008
87 2008 Analysis of threshold voltage distribution due to random dopants: A 100 000-sample 3-D simulation study D Reid, C Millar, G Roy, S Roy, A Asenov
IEEE Transactions on Electron Devices 56 (10), 2255-2263, 2009
86 2009 Understanding LER-Induced MOSFET D Reid, C Millar, S Roy, A Asenov
IEEE Transactions on Electron Devices 57 (11), 2801-2807, 2010
55 2010 Advanced simulation of statistical variability and reliability in nano CMOS transistors A Asenov, S Roy, RA Brown, G Roy, C Alexander, C Riddet, C Millar, ...
2008 IEEE International Electron Devices Meeting, 1-1, 2008
51 2008 Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review L Gerrer, J Ding, SM Amoroso, F Adamu-Lema, R Hussin, D Reid, C Millar, ...
Microelectronics Reliability 54 (4), 682-697, 2014
48 2014 FinFET centric variability-aware compact model extraction and generation technology supporting DTCO X Wang, B Cheng, D Reid, A Pender, P Asenov, C Millar, A Asenov
IEEE Transactions on Electron Devices 62 (10), 3139-3146, 2015
33 2015 Experimental implementation of optimal WLAN channel selection without communication D Malone, P Clifford, D Reid, DJ Leith
2007 2nd IEEE International Symposium on New Frontiers in Dynamic Spectrum …, 2007
27 2007 Simulation study of the impact of quantum confinement on the electrostatically driven performance of n-type nanowire transistors Y Wang, T Al-Ameri, X Wang, VP Georgiev, E Towie, SM Amoroso, ...
IEEE Transactions on Electron Devices 62 (10), 3229-3236, 2015
26 2015 Simulation based transistor-SRAM co-design in the presence of statistical variability and reliability A Asenov, B Cheng, X Wang, AR Brown, D Reid, C Millar, C Alexander
2013 IEEE International Electron Devices Meeting, 33.1. 1-33.1. 4, 2013
25 2013 Accurate simulation of transistor-level variability for the purposes of TCAD-based device-technology cooptimization L Gerrer, AR Brown, C Millar, R Hussin, SM Amoroso, B Cheng, D Reid, ...
IEEE Transactions on Electron Devices 62 (6), 1739-1745, 2015
23 2015 Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology L Gerrer, SM Amoroso, P Asenov, J Ding, B Cheng, F Adamu-Lema, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 3A. 2.1-3A. 2.5, 2013
22 2013 Modelling circuit performance variations due to statistical variability: Monte Carlo static timing analysis M Merrett, P Asenov, Y Wang, M Zwolinski, D Reid, C Millar, S Roy, Z Liu, ...
2011 Design, Automation & Test in Europe, 1-4, 2011
20 2011 The evolution of standard cell libraries for future technology nodes JA Walker, JA Hilder, D Reid, A Asenov, S Roy, C Millar, AM Tyrrell
Genetic Programming and Evolvable Machines 12, 235-256, 2011
19 2011 Understanding LER-Induced MOSFET D Reid, C Millar, S Roy, A Asenov
IEEE transactions on electron devices 57 (11), 2808-2813, 2010
19 2010 Understanding LER-induced statistical variability: A 35,000 sample 3D simulation study D Reid, C Millar, G Roy, S Roy, A Asenov
2009 Proceedings of the European Solid State Device Research Conference, 423-426, 2009
19 2009 Hot carrier aging and its variation under use-bias: Kinetics, prediction, impact on Vdd and SRAM M Duan, JF Zhang, A Manut, Z Ji, W Zhang, A Asenov, L Gerrer, D Reid, ...
2015 IEEE International Electron Devices Meeting (IEDM), 20.4. 1-20.4. 4, 2015
18 2015 Mathematical Modelling of Polyamine Metabolism in Bloodstream-Form Trypanosoma brucei : An Application to Drug Target Identification X Gu, D Reid, DJ Higham, D Gilbert
PLoS One 8 (1), e53734, 2013
17 2013 Combining process and statistical variability in the evaluation of the effectiveness of corners in digital circuit parametric yield analysis P Asenov, NA Kamsani, D Reid, C Millar, S Roy, A Asenov
2010 Proceedings of the European Solid State Device Research Conference, 130-133, 2010
16 2010 Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET U Kovac, D Reid, C Millar, G Roy, S Roy, A Asenov
Microelectronics Reliability 48 (8-9), 1572-1575, 2008
16 2008 Lecture capture: Early lessons learned and experiences shared CJ Andrews, RC Brown, CKW Harrison, D Reid, PL Roach
New Directions in the Teaching of Natural Sciences, 56-60, 2010
15 2010 