Paola Prete
Tytuł
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Exciton spectroscopy in Zn 1− x Cd x Se/ZnSe quantum wells
R Cingolani, P Prete, D Greco, PV Giugno, M Lomascolo, R Rinaldi, ...
Physical Review B 51 (8), 5176, 1995
1221995
Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors
EM Gallo, G Chen, M Currie, T McGuckin, P Prete, N Lovergine, B Nabet, ...
Applied Physics Letters 98 (24), 241113, 2011
1002011
Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine
P Paiano, P Prete, N Lovergine, AM Mancini
Journal of applied physics 100 (9), 094305, 2006
942006
Au nanoparticles prepared by physical method on Si and sapphire substrates for biosensor applications
J Spadavecchia, P Prete, N Lovergine, L Tapfer, R Rella
The Journal of Physical Chemistry B 109 (37), 17347-17349, 2005
882005
Recombination mechanisms and lasing in shallow Zn 0.9 Cd 0.1 Se/ZnSe quantum-well structures
R Cingolani, R Rinaldi, L Calcagnile, P Prete, P Sciacovelli, L Tapfer, ...
Physical Review B 49 (23), 16769, 1994
781994
Formation of epitaxial gold nanoislands on (100) silicon
E Piscopiello, L Tapfer, MV Antisari, P Paiano, P Prete, N Lovergine
Physical Review B 78 (3), 035305, 2008
592008
Electron holographic tomography for mapping the three-dimensional distribution of electrostatic potential in III-V semiconductor nanowires
D Wolf, H Lichte, G Pozzi, P Prete, N Lovergine
Applied Physics Letters 98 (26), 264103, 2011
462011
On optical properties of GaAs and GaAs/AlGaAs core-shell periodic nanowire arrays
Z Gu, P Prete, N Lovergine, B Nabet
Journal of Applied Physics 109 (6), 064314, 2011
462011
Luminescence of GaAs/AlGaAs core–shell nanowires grown by MOVPE using tertiarybutylarsine
P Prete, F Marzo, P Paiano, N Lovergine, G Salviati, L Lazzarini, ...
Journal of Crystal Growth 310 (23), 5114-5118, 2008
442008
Optical properties of MOVPE-grown ZnS epilayers on (100) GaAs
M Fernández, P Prete, N Lovergine, AM Mancini, R Cingolani, L Vasanelli, ...
Physical Review B 55 (12), 7660, 1997
431997
Optimization of interface parameters and bulk properties in ZnSe‐GaAs heterostructures
A Bonanni, L Vanzetti, L Sorba, A Franciosi, M Lomascolo, P Prete, ...
Applied physics letters 66 (9), 1092-1094, 1995
361995
Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies
N Lovergine, M Longo, P Prete, C Gerardi, L Calcagnile, R Cingolani, ...
Journal of applied physics 81 (2), 685-692, 1997
351997
MOVPE Growth of Wide Band‐Gap II—VI Compounds for Near‐UV and Deep‐Blue Light Emitting Devices
N Lovergine, P Prete, G Leo, L Calcagnile, R Cingolani, AM Mancini, ...
Crystal Research and Technology: Journal of Experimental and Industrial …, 1998
321998
Direct epitaxial CVD synthesis of tungsten disulfide on epitaxial and CVD graphene
GV Bianco, M Losurdo, MM Giangregorio, A Sacchetti, P Prete, ...
RSC advances 5 (119), 98700-98708, 2015
312015
On hydrogen transport VPE-grown CdTe epilayers for fabrication of 1–100 keV X-ray detectors
N Lovergine, A Cola, P Prete, L Tapfer, M Bayhan, AM Mancini
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2001
302001
GaAs nanowires grown by Au-catalyst-assisted MOVPE using tertiarybutylarsine as group-V precursor
P Paiano, P Prete, E Speiser, N Lovergine, W Richter, L Tapfer, ...
Journal of crystal growth 298, 620-624, 2007
292007
Pulsed plasma ion source to create Si nanocrystals in SiO2 substrates
A Lorusso, V Nassisi, G Congedo, N Lovergine, L Velardi, P Prete
Applied Surface Science 255 (10), 5401-5404, 2009
282009
Hydrogen transport vapour growth and properties of thick CdTe epilayers for RT X‐ray detector applications
N Lovergine, P Prete, L Tapfer, F Marzo, AM Mancini
Crystal Research and Technology: Journal of Experimental and Industrial …, 2005
282005
Nanometer-scale tomographic reconstruction of three-dimensional electrostatic potentials in GaAs/AlGaAs core-shell nanowires
A Lubk, D Wolf, P Prete, N Lovergine, T Niermann, S Sturm, H Lichte
Physical Review B 90 (12), 125404, 2014
272014
On direct-writing methods for electrically contacting GaAs and Ge nanowire devices
G Chen, EM Gallo, J Burger, B Nabet, A Cola, P Prete, N Lovergine, ...
Applied Physics Letters 96 (22), 223107, 2010
272010
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