Obserwuj
Yongjun Lee
Tytuł
Cytowane przez
Cytowane przez
Rok
A 20nm 1.8 V 8Gb PRAM with 40MB/s program bandwidth
Y Choi, I Song, MH Park, H Chung, S Chang, B Cho, J Kim, Y Oh, D Kwon, ...
2012 IEEE International Solid-State Circuits Conference, 46-48, 2012
4512012
A fully associative, tagless DRAM cache
Y Lee, J Kim, H Jang, H Yang, J Kim, J Jeong, JW Lee
ACM SIGARCH computer architecture news 43 (3S), 211-222, 2015
1312015
A 58nm 1.8 v 1gb pram with 6.4 mb/s program bw
H Chung, BH Jeong, BJ Min, Y Choi, BH Cho, J Shin, J Kim, J Sunwoo, ...
2011 IEEE International Solid-State Circuits Conference, 500-502, 2011
1092011
Nonvolatile memory device comprising one-time-programmable lock bit register
YJ Lee, KJ Lee, JM Park, HW Seo
US Patent 8,547,724, 2013
802013
Method of equalizing bit error rates of memory device
EC Oh, M Kim, YS Kim, YJ Lee, JH Lee
US Patent 11,126,497, 2021
652021
Efficient footprint caching for tagless dram caches
H Jang, Y Lee, J Kim, Y Kim, J Kim, J Jeong, JW Lee
2016 IEEE International Symposium on High Performance Computer Architecture …, 2016
552016
Memory devices, memory systems and methods of operating memory devices
YJ Lee, TH Na, CO Lim
US Patent 10,629,286, 2020
462020
eDRAM-based tiered-reliability memory with applications to low-power frame buffers
K Cho, Y Lee, YH Oh, G Hwang, JW Lee
Proceedings of the 2014 international symposium on Low power electronics and …, 2014
352014
Variable resistance memory device and system
Q Wang, KJ Lee, WY Cho, TS Kim, KH Kim, HH Choi, YJ Lee, H Kim
US Patent 8,194,492, 2012
112012
Semiconductor device having resistance based memory array, method of reading, and systems associated therewith
KJ Lee, DE Kim, YJ Lee
US Patent 7,920,432, 2011
112011
Nonvolatile memory and a nonvolatile memory system
Y Lee
US Patent 10,031,702, 2018
72018
Nonvolatile memory device having read circuits for performing Read-While-Write (RWW) operation and Read-Modify-Write (RMW) operation
K Hyo-Jin, H Chung, CH Kim, K Yong-Jin, P Eun-Hye, YJ Lee
US Patent 9,135,994, 2015
52015
Memory device for generating a compensation current based on a difference between a first read voltage and a second read voltage and a method of operating the same
CO Lim, TH Na, J Sunwoo, YJ Lee
US Patent 10,580,488, 2020
42020
Memory device having resistance change material and operating method for the memory device
CO Lim, HK Park, J Sunwoo, YH Oh, YJ Lee
US Patent 10,074,426, 2018
42018
Semiconductor device having resistance based memory array, method of reading, and systems associated therewith
KJ Lee, DE Kim, YJ Lee
US Patent 8,482,994, 2013
42013
Semiconductor device having resistance based memory array, method of operation, and systems associated therewith
YJ Lee, KJ Lee, TS Kim, KH Kim, WY Cho, HH Choi, HJ Kim
US Patent 8,218,379, 2012
42012
DRAM architecture for efficient data lifetime management
Y Lee, Y Kim, J Jeong, JW Lee
ieice electronics express 14 (10), 20170309-20170309, 2017
32017
Nonvolatile memory device and method for controlling word line or bit line thereof
JY Choi, B Choi, YH Ro, YJ Lee
US Patent 8,305,806, 2012
32012
Method of discharging bit-lines for a non-volatile semiconductor memory device performing a read-while-write operation
YJ Lee, BG Choi, DE Kim
US Patent 8,254,159, 2012
32012
Method of preventing coupling noises for a non-volatile semiconductor memory device
KJ Lee, YJ Lee, DE Kim, WY Cho, JY Choi
US Patent 8,102,704, 2012
22012
Nie można teraz wykonać tej operacji. Spróbuj ponownie później.
Prace 1–20