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Ming Xiao
Ming Xiao
Center for Power Electronics Systems, Virginia Tech
Zweryfikowany adres z vt.edu
Tytuł
Cytowane przez
Cytowane przez
Rok
Vertical Ga2O3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm2
N Allen, M Xiao, X Yan, K Sasaki, MJ Tadjer, J Ma, R Zhang, H Wang, ...
IEEE Electron Device Letters 40 (9), 1399-1402, 2019
872019
Surge-energy and overvoltage ruggedness of P-gate GaN HEMTs
R Zhang, JP Kozak, M Xiao, J Liu, Y Zhang
IEEE Transactions on Power Electronics 35 (12), 13409-13419, 2020
402020
3.3 kV multi-channel AlGaN/GaN Schottky barrier diodes with P-GaN termination
M Xiao, Y Ma, K Cheng, K Liu, A Xie, E Beam, Y Cao, Y Zhang
IEEE Electron Device Letters 41 (8), 1177-1180, 2020
372020
High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K
B Wang, M Xiao, X Yan, HY Wong, J Ma, K Sasaki, H Wang, Y Zhang
Applied Physics Letters 115 (26), 263503, 2019
372019
Design and simulation of GaN superjunction transistors with 2-DEG channels and fin channels
M Xiao, R Zhang, D Dong, H Wang, Y Zhang
IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019
332019
Leakage and breakdown mechanisms of GaN vertical power FinFETs
M Xiao, X Gao, T Palacios, Y Zhang
Applied Physics Letters 114 (16), 163503, 2019
292019
10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes
M Xiao, Y Ma, K Liu, K Cheng, Y Zhang
IEEE Electron Device Letters 42 (6), 808-811, 2021
262021
1.2-kV vertical GaN fin-JFETs: High-temperature characteristics and avalanche capability
J Liu, M Xiao, R Zhang, S Pidaparthi, H Cui, A Edwards, M Craven, ...
IEEE Transactions on Electron Devices 68 (4), 2025-2032, 2021
252021
1.2 kV vertical GaN fin JFETs with robust avalanche and fast switching capabilities
J Liu, M Xiao, Y Zhang, S Pidaparthi, H Cui, A Edwards, L Baubutr, ...
2020 IEEE International Electron Devices Meeting (IEDM), 23.2. 1-23.2. 4, 2020
232020
Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN
M Xiao, Z Du, J Xie, E Beam, X Yan, K Cheng, H Wang, Y Cao, Y Zhang
Applied Physics Letters 116 (5), 053503, 2020
232020
Trap-mediated avalanche in large-area 1.2 kV vertical GaN pn diodes
J Liu, M Xiao, R Zhang, S Pidaparthi, C Drowley, L Baubutr, A Edwards, ...
IEEE Electron Device Letters 41 (9), 1328-1331, 2020
222020
Packaged Ga2O3 Schottky Rectifiers With Over 60-A Surge Current Capability
M Xiao, B Wang, J Liu, R Zhang, Z Zhang, C Ding, S Lu, K Sasaki, GQ Lu, ...
IEEE Transactions on Power Electronics 36 (8), 8565-8569, 2021
212021
GaN FinFETs and trigate devices for power and RF applications: Review and perspective
Y Zhang, A Zubair, Z Liu, M Xiao, J Perozek, Y Ma, T Palacios
Semiconductor Science and Technology 36 (5), 054001, 2021
202021
Dynamic breakdown voltage of GaN power HEMTs
R Zhang, JP Kozak, Q Song, M Xiao, J Liu, Y Zhang
2020 IEEE International Electron Devices Meeting (IEDM), 23.3. 1-23.3. 4, 2020
182020
High Performance Al0.10Ga0.90N Channel HEMTs
M Xiao, J Zhang, X Duan, W Zhang, H Shan, J Ning, Y Hao
IEEE Electron Device Letters 39 (8), 1149-1151, 2018
182018
Switching performance analysis of vertical GaN FinFETs: Impact of interfin designs
H Wang, M Xiao, K Sheng, T Palacios, Y Zhang
IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (2 …, 2020
162020
ON-resistance in vertical power FinFETs
M Xiao, T Palacios, Y Zhang
IEEE Transactions on Electron Devices 66 (9), 3903-3909, 2019
152019
A partly-contacted epitaxial lateral overgrowth method applied to GaN material
M Xiao, J Zhang, X Duan, H Shan, T Yu, J Ning, Y Hao
Scientific Reports 6 (1), 1-8, 2016
152016
Origin of leakage current in vertical GaN devices with nonplanar regrown p-GaN
M Xiao, X Yan, J Xie, E Beam, Y Cao, H Wang, Y Zhang
Applied Physics Letters 117 (18), 183502, 2020
142020
Improvement of TCAD augmented machine learning using autoencoder for semiconductor variation identification and inverse design
K Mehta, SS Raju, M Xiao, B Wang, Y Zhang, HY Wong
IEEE Access 8, 143519-143529, 2020
142020
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