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Vishnu Khemka
Tytuł
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SiC and GaN bipolar power devices
TP Chow, V Khemka, J Fedison, N Ramungul, K Matocha, Y Tang, ...
Solid-State Electronics 44 (2), 277-301, 2000
1752000
Design considerations and experimental analysis for silicon carbide power rectifiers
V Khemka, R Patel, TP Chow, RJ Gutmann
Solid-State Electronics 43 (10), 1945-1962, 1999
941999
A double RESURF LDMOS with drain profile engineering for improved ESD robustness
V Parthasarathy, V Khemka, R Zhu, J Whitfield, A Bose, R Ida
IEEE Electron Device Letters 23 (4), 212-214, 2002
822002
A 0.25/spl mu/m CMOS based 70V smart power technology with deep trench for high-voltage isolation
V Parthasarathy, R Zhu, V Khemka, T Roggenbauer, A Bose, P Hui, ...
Digest. International Electron Devices Meeting,, 459-462, 2002
662002
Floating resurf LDMOSFET and method of manufacturing same
V Khemka, V Parthasarathy, R Zhu, A Bose
US Patent 6,882,023, 2005
622005
Characterization of phosphorus implantation in 4H-SiC
V Khemka, R Patel, N Ramungul, TP Chow, M Ghezzo, J Kretchmer
Journal of electronic materials 28, 167-174, 1999
621999
A fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier
V Khemka, V Ananthan, TP Chow
IEEE Electron Device Letters 21 (6), 286-288, 2000
602000
Structure and method for RESURF LDMOSFET with a current diverter
VK Khemka, A Bose, TC Roggenbauer, R Zhu
US Patent 7,439,584, 2008
502008
Detection and optimization of temperature distribution across large-area power MOSFETs to improve energy capability
V Khemka, V Parthasarathy, R Zhu, A Bose, T Roggenbauer
IEEE Transactions on Electron Devices 51 (6), 1025-1032, 2004
492004
Semiconductor devices employing poly-filled trenches
R Zhu, VK Khemka, A Bose
US Patent 7,791,161, 2010
432010
SOA improvement by a double RESURF LDMOS technique in a power IC technology
V Parthasarathy, V Khemka, R Zhu, A Bose
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
432000
Semiconductor device with increased snapback voltage
BH Grote, VK Khemka, TA Khan, W Huang, R Zhu
US Patent 8,193,585, 2012
422012
Effect of reactive ion etch-induced damage on the performance of 4H-SiC Schottky barrier diodes
V Khemka, TP Chow, RJ Gutmann
Journal of electronic materials 27, 1128-1135, 1998
421998
Schottky device
V Parthasarathy, VK Khemka, R Zhu, A Bose
US Patent 7,071,518, 2006
402006
Implementation of high-side, high-voltage RESURF LDMOS in a sub-half micron smart power technology
R Zhu, V Parthasarathy, V Khemka, A Bose, T Roggenbauer
Proceedings of the 13th International Symposium on Power Semiconductor …, 2001
402001
Structure and method for RESURF diodes with a current diverter
VK Khemka, R Zhu, A Bose
US Patent 7,466,006, 2008
392008
Electronic device including a conductive structure extending through a buried insulating layer
TC Roggenbauer, VK Khemka, R Zhu, A Bose, P Hui, X Huang
US Patent 8,188,543, 2012
352012
A Floating Resurf (Fresurf) LD-MOSFET Device Concept
V Khemka, V Parthasarathy, R Zhu, A Bose
IEEE Electron Device Letters 24 (10), 664-666, 2003
352003
Semiconductor component and method of operation
V Parthasarathy, R Zhu, VK Khemka, A Bose
US Patent 6,573,562, 2003
342003
Semiconductor device and method of forming the same
R Zhu, A Bose, VK Khemka, V Parthasarathy
US Patent 7,095,092, 2006
332006
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