Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ...
Journal of applied physics 85 (6), 3222-3233, 1999
3636 1999 Growth and applications of group III-nitrides O Ambacher
Journal of physics D: Applied physics 31 (20), 2653, 1998
2144 1998 Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ...
Journal of applied physics 87 (1), 334-344, 2000
2077 2000 Wireless sub-THz communication system with high data rate S Koenig, D Lopez-Diaz, J Antes, F Boes, R Henneberger, A Leuther, ...
Nature photonics 7 (12), 977-981, 2013
1462 2013 Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ...
Journal of physics: condensed matter 14 (13), 3399, 2002
1391 2002 Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures V Fiorentini, F Bernardini, O Ambacher
Applied physics letters 80 (7), 1204-1206, 2002
1020 2002 Optical constants of epitaxial AlGaN films and their temperature dependence D Brunner, H Angerer, E Bustarret, F Freudenberg, R Höpler, R Dimitrov, ...
Journal of applied physics 82 (10), 5090-5096, 1997
788 1997 Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry T Metzger, R Höpler, E Born, O Ambacher, M Stutzmann, R Stömmer, ...
Philosophical magazine A 77 (4), 1013-1025, 1998
725 1998 Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral PDC King, TD Veal, F Fuchs, CY Wang, DJ Payne, A Bourlange, H Zhang, ...
Physical Review B 79 (20), 205211, 2009
500 2009 Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications V Cimalla, J Pezoldt, O Ambacher
Journal of Physics D: Applied Physics 40 (20), S19, 2007
476 2007 Undoped AlGaN/GaN HEMTs for microwave power amplification LF Eastman, V Tilak, J Smart, BM Green, EM Chumbes, R Dimitrov, H Kim, ...
IEEE Transactions on Electron Devices 48 (3), 479-485, 2001
464 2001 Determination of the Al mole fraction and the band gap bowing of epitaxial H Angerer, D Brunner, F Freudenberg, O Ambacher, M Stutzmann, ...
Applied Physics Letters 71 (11), 1504-1506, 1997
429 1997 Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff MKKMK Kelly, RPVRP Vaudo, VMPVM Phanse, LGL Görgens, ...
Japanese journal of applied physics 38 (3A), L217, 1999
420 1999 Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
404 1996 Sound velocity of C Deger, E Born, H Angerer, O Ambacher, M Stutzmann, J Hornsteiner, ...
Applied Physics Letters 72 (19), 2400-2402, 1998
367 1998 Effects of solvent and annealing on the improved performance of solar cells based on poly (3-hexylthiophene): fullerene M Al-Ibrahim, O Ambacher, S Sensfuss, G Gobsch
Applied Physics Letters 86 (20), 2005
363 2005 Optical process for liftoff of group III-nitride films MK Kelly, O Ambacher, R Dimitrov, R Handschuh, M Stutzmann
Physica Status Solidi A (Applied Research) 159, 1997
294 1997 Relation between absorption and crystallinity of poly (3-hexylthiophene)/fullerene films for plastic solar cells U Zhokhavets, T Erb, G Gobsch, M Al-Ibrahim, O Ambacher
Chemical Physics Letters 418 (4-6), 347-350, 2006
293 2006 Playing with polarity M Stutzmann, O Ambacher, M Eickhoff, U Karrer, A Lima Pimenta, ...
physica status solidi (b) 228 (2), 505-512, 2001
285 2001 Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films W Rieger, T Metzger, H Angerer, R Dimitrov, O Ambacher, M Stutzmann
Applied physics letters 68 (7), 970-972, 1996
280 1996 
Martin StutzmannProfessor (retired) of Experimental Physics, Walter Schottky Institut, TU MünchenZweryfikowany adres z wsi.tum.de
