Obserwuj
Lu Liu
Lu Liu
University of Florida, Stanford University
Zweryfikowany adres z stanford.edu
Tytuł
Cytowane przez
Cytowane przez
Rok
Reliability studies of AlGaN/GaN high electron mobility transistors
DJ Cheney, EA Douglas, L Liu, CF Lo, YY Xi, BP Gila, F Ren, D Horton, ...
Semiconductor Science and Technology 28 (7), 074019, 2013
225*2013
Review of radiation damage in GaN-based materials and devices
SJ Pearton, R Deist, F Ren, L Liu, AY Polyakov, J Kim
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (5 …, 2013
1962013
Radiation Effects in GaN Materials and Devices
AY Polyakov, S Pearton, P Frenzer, F Ren, L Liu, J Kim
Journal of Materials Chemistry C, 2013
1692013
Materials and reliability handbook for semiconductor optical and electron devices
O UEDA, SJ PEARTON
1102012
Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure
CF Lo, TS Kang, L Liu, CY Chang, SJ Pearton, II Kravchenko, O Laboutin, ...
Applied Physics Letters 97 (26), 262116, 2010
612010
Degradation Mechanisms for GaN and GaAs High Speed Transistors
DJ Cheney, EA Douglas, L Liu, CF Lo, BP Gila, F Ren, SJ Pearton
Materials 5 (12), 2498-2520, 2012
602012
Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors
CY Chang, EA Douglas, J Kim, L Lu, CF Lo, BH Chu, DJ Cheney, BP Gila, ...
IEEE Transactions on Device and Materials reliability 11 (1), 187-193, 2011
572011
Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors
ED C. Schwarz, A. Yadav, M. Shatkhin, E. Flitsiyan, L
APPLIED PHYSICS LETTERS 102 (6), 062102, 2013
562013
AlGaN/GaN High Electron Mobility Transistor degradation under on-and off-state stress
EA Douglas, CY Chang, DJ Cheney, BP Gila, CF Lo, L Lu, R Holzworth, ...
Microelectronics Reliability 51 (2), 207-211, 2011
492011
Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors
L Liu, CF Lo, Y Xi, Y Wang, F Ren, SJ Pearton, HY Kim, J Kim, RC Fitch, ...
Journal of Vacuum Science & Technology B 31 (2), 022201, 2013
442013
Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor
MR Holzworth, NG Rudawski, SJ Pearton, KS Jones, L Lu, TS Kang, ...
Applied Physics Letters 98 (12), 122103, 2011
432011
Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors
EA Douglas, CY Chang, BP Gila, MR Holzworth, KS Jones, L Liu, J Kim, ...
Microelectronics Reliability 52 (1), 23-28, 2012
422012
Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors
L Liu, TS Kang, DA Cullen, L Zhou, J Kim, CY Chang, EA Douglas, S Jang, ...
Journal of Vacuum Science & Technology B 29 (3), 032204, 2011
392011
Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions
AY Polyakov, NB Smirnov, AV Govorkov, EA Kozhukhova, SJ Pearton, ...
Journal of Vacuum Science & Technology B 30 (6), 061207, 2012
372012
Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors
CY Chang, T Anderson, J Hite, L Lu, CF Lo, BH Chu, DJ Cheney, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2010
372010
Modeling Proton Irradiation in AlGaN/GaN HEMTs: Understanding the Increase of Critical Voltage
E Patrick, ME Law, L Liu, C Velez Cuervo, Y Xi, F Ren, SJ Pearton
Nuclear Science, IEEE Transactions on 60 (6), 4103-4108, 2013
322013
Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors
HY Kim, J Kim, L Liu, CF Lo, F Ren, SJ Pearton
Journal of Vacuum Science & Technology B 30 (1), 012202, 2012
312012
Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors
L Liu, C Velez Cuervo, Y Xi, F Ren, SJ Pearton, HY Kim, J Kim, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2013
302013
Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions
YS Hwang, L Liu, F Ren, A Y, SJ Pearton
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2013
292013
Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies
HY Kim, CF Lo, L Liu, F Ren, J Kim, SJ Pearton
Applied Physics Letters 100 (1), 012107, 2012
292012
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