Obserwuj
Ya-Hsi Hwang
Ya-Hsi Hwang
Zweryfikowany adres z ufl.edu
Tytuł
Cytowane przez
Cytowane przez
Rok
Use of dicarboxylic acids to improve and diversify the material properties of porous chitosan membranes
PH Chen, TY Kuo, FH Liu, YH Hwang, MH Ho, DM Wang, JY Lai, ...
Journal of agricultural and food chemistry 56 (19), 9015-9021, 2008
712008
Improvement in the properties of chitosan membranes using natural organic acid solutions as solvents for chitosan dissolution
PH Chen, YH Hwang, TY Kuo, FH Liu, JY Lai, HJ Hsieh
Journal of Medical and Biological Engineering 27 (1), 23-28, 2007
632007
Copper bump structures having sidewall protection layers
JC Lin, YH Hwung, HY Chen, PH Tsai, YF Lin, CL Huang, FW Tsai, ...
US Patent 8,922,004, 2014
362014
Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors
YH Hwang, YL Hsieh, L Lei, S Li, F Ren, SJ Pearton, A Yadav, C Schwarz, ...
Journal of Vacuum Science & Technology B 32 (3), 2014
252014
Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage
YH Hwang, S Li, YL Hsieh, F Ren, SJ Pearton, E Patrick, ME Law, ...
Applied Physics Letters 104 (8), 2014
252014
High electron mobility transistors with improved heat dissipation
F Ren, SJ Pearton, ME Law, YH Hwang
US Patent 10,312,358, 2019
232019
Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors
A Yadav, E Flitsiyan, L Chernyak, YH Hwang, YL Hsieh, L Lei, F Ren, ...
Radiation Effects and Defects in Solids 170 (5), 377-385, 2015
222015
Chapter 1: Effects of Radiation Damage in GaN and Related Materials
AYPJK S. J. Pearton, Fan Ren, Y.-H. Hwang, Shun Li, Yueh-Ling Hsieh
Gallium Nitride: Structure, Thermal Properties and Applications, 1-32, 2014
22*2014
Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate
L Liu, YH Hwang, Y Xi, F Ren, V Craciun, SJ Pearton, G Yang, HY Kim, ...
Journal of Vacuum Science & Technology B 32 (2), 2014
192014
Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors
Y Xi, YL Hsieh, YH Hwang, S Li, F Rena, SJ Pearton, E Patrick, ME Law, ...
192013
Effects of 340 keV proton irradiation on InGaN/GaN blue light-emitting diodes
BJ Kim, YH Hwang, S Ahn, F Ren, SJ Pearton, J Kim, TS Jang
Journal of Vacuum Science & Technology B 33 (5), 2015
152015
Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors
S Ahn, C Dong, W Zhu, BJ Kim, YH Hwang, F Ren, SJ Pearton, G Yang, ...
Journal of Vacuum Science & Technology B 33 (5), 2015
152015
Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area
YH Hwang, TS Kang, F Ren, SJ Pearton
Journal of Vacuum Science & Technology B 32 (6), 2014
152014
Radiation effects in AlGaN/GaN and InAlN/GaN high electron mobility transistors
SJ Pearton, YH Hwang, F Ren
ECS Transactions 66 (1), 3, 2015
142015
Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors
T Anderson, A Koehler, YH Hwang, YL Hsieh, S Li, F Ren, JW Johnson, ...
Journal of Vacuum Science & Technology B 32 (5), 2014
132014
Enhancement of AlGaN/GaN high electron mobility transistors off-state drain breakdown voltage via backside proton irradiation
S Li, YH Hwang, YL Hsieh, L Lei, F Ren, SJ Pearton, E Patrick, ME Law, ...
Journal of Vacuum Science & Technology B 32 (2), 2014
102014
Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure
Y Xi, L Liu, YH Hwang, O Phillips, F Ren, SJ Pearton, J Kim, CH Hsu, ...
Journal of Vacuum Science & Technology B 31 (3), 2013
102013
Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs
YH Hwang, S Ahn, C Dong, W Zhu, BJ Kim, L Le, F Ren, AG Lind, J Dahl, ...
Journal of Vacuum Science & Technology B 33 (3), 2015
92015
Copper bump structures having sidewall protection layers
JC Lin, YH Hwung, HY Chen, PH Tsai, YF Lin, CL Huang, FW Tsai, ...
US Patent 9,093,314, 2015
82015
Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors
S Ahn, W Zhu, C Dong, L Le, YH Hwang, BJ Kim, F Ren, SJ Pearton, ...
Journal of Vacuum Science & Technology B 33 (3), 2015
72015
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