Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers N Gautam, HS Kim, MN Kutty, E Plis, LR Dawson, S Krishna
Applied Physics Letters 96 (23), 2010
174 2010 Passivation techniques for InAs/GaSb strained layer superlattice detectors EA Plis, MN Kutty, S Krishna
Laser & Photonics Reviews 7 (1), 45-59, 2013
85 2013 Varshni parameters for InAs/GaSb strained layer superlattice infrared photodetectors B Klein, E Plis, MN Kutty, N Gautam, A Albrecht, S Myers, S Krishna
Journal of Physics D: Applied Physics 44 (7), 075102, 2011
72 2011 Lateral diffusion of minority carriers in InAsSb-based nBn detectors E Plis, S Myers, MN Kutty, J Mailfert, EP Smith, S Johnson, S Krishna
Applied Physics Letters 97 (12), 2010
57 2010 Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices GA Umana-Membreno, B Klein, H Kala, J Antoszewski, N Gautam, ...
Applied Physics Letters 101 (25), 2012
54 2012 GaSb quantum-well-based “buffer-free” vertical light emitting diode monolithically embedded within a GaAs cavity incorporating interfacial misfit arrays M Mehta, G Balakrishnan, S Huang, A Khoshakhlagh, A Jallipalli, P Patel, ...
Applied physics letters 89 (21), 2006
47 2006 Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors E Plis, MN Kutty, S Myers, HS Kim, N Gautam, LR Dawson, S Krishna
Infrared Physics & Technology 54 (3), 252-257, 2011
45 2011 1.54 µm GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays A Jallipalli, MN Kutty, G Balakrishnan, J Tatebayashi, N Nuntawong, ...
Electronics letters 43 (22), 1198-1199, 2007
44 2007 Room-Temperature Operation of Buffer-Free GaSb–AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 m M Mehta, A Jallipalli, J Tatebayashi, MN Kutty, A Albrecht, G Balakrishnan, ...
IEEE Photonics Technology Letters 19 (20), 1628-1630, 2007
44 2007 Band engineered HOT midwave infrared detectors based on type-II InAs/GaSb strained layer superlattices N Gautam, S Myers, AV Barve, B Klein, EP Smith, D Rhiger, E Plis, ...
Infrared physics & technology 59, 72-77, 2013
36 2013 Study of surface treatments on InAs/GaSb superlattice lwir detectors MN Kutty, E Plis, A Khoshakhlagh, S Myers, N Gautam, S Smolev, ...
Journal of Electronic Materials 39, 2203-2209, 2010
35 2010 Room-temperature lasing at 1.82 μm of GaInSb∕ AlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array J Tatebayashi, A Jallipalli, MN Kutty, SH Huang, G Balakrishnan, ...
Applied Physics Letters 91 (14), 2007
34 2007 Mid-wavelength InAsSb detectors based on nBn design A Khoshakhlagh, S Myers, E Plis, MN Kutty, B Klein, N Gautam, H Kim, ...
Infrared Technology and Applications XXXVI 7660, 948-954, 2010
30 2010 Investigation of multistack InAs/InGaAs/GaAs self-assembled quantum dots-in-double-well structures for infrared detectors YD Sharma, MN Kutty, RV Shenoi, AV Barve, S Myers, J Shao, E Plis, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2010
28 2010 Monolithically integrated III-Sb-based laser diodes grown on miscut Si substrates J Tatebayashi, A Jallipalli, MN Kutty, S Huang, K Nunna, G Balakrishnan, ...
IEEE Journal of Selected Topics in Quantum Electronics 15 (3), 716-723, 2009
28 2009 Performance improvement of long-wave infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation EA Plis, MN Kutty, S Myers, A Rathi, EH Aifer, I Vurgaftman, S Krishna
Infrared Physics & Technology 55 (2-3), 216-219, 2012
25 2012 Comparison of superlattice based dual color nBn and pBp infrared detectors S Myers, E Plis, C Morath, V Cowan, N Gautam, B Klein, MN Kutty, ...
Infrared Sensors, Devices, and Applications; and Single Photon Imaging II …, 2011
20 2011 Heterostructure band engineering of type-II InAs/GaSb superlattice based longwave infrared photodiodes using unipolar current blocking barriers N Gautam, E Plis, HS Kim, MN Kutty, S Myers, A Khoshakhlagh, ...
Infrared Technology and Applications XXXVI 7660, 572-577, 2010
20 2010 Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots PS Wong, BL Liang, J Tatebayashi, L Xue, N Nuntawong, MN Kutty, ...
Nanotechnology 20 (3), 035302, 2008
18 2008 Compensation of interfacial states located inside the “buffer-free” GaSb/GaAs (001) heterojunction via δ-doping A Jallipalli, K Nunna, MN Kutty, G Balakrishnan, GB Lush, LR Dawson, ...
Applied Physics Letters 95 (7), 2009
15 2009