| High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD M Kopytko, A Kębłowski, W Gawron, P Madejczyk, A Kowalewski, ... Opto-Electronics Review 21 (4), 402-405, 2013 | 42 | 2013 |
| Performance modeling of MWIR InAs/GaSb/B–Al0. 2Ga0. 8Sb type-II superlattice nBn detector P Martyniuk, J Wrobel, E Plis, P Madejczyk, A Kowalewski, W Gawron, ... Semiconductor Science and Technology 27 (5), 055002, 2012 | 39 | 2012 |
| Mid-wavelength infrared type-II InAs/GaSb superlattice interband cascade photodetectors W Pusz, A Kowalewski, P Martyniuk, W Gawron, E Plis, S Krishna, ... Optical Engineering 53 (4), 043107, 2014 | 23 | 2014 |
| MOCVD grown HgCdTe barrier structures for HOT conditions (July 2014) M Kopytko, A Kębłowski, W Gawron, A Kowalewski, A Rogalski IEEE Transactions on Electron Devices 61 (11), 3803-3807, 2014 | 22 | 2014 |
| MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors P Madejczyk, W Gawron, P Martyniuk, A Kębłowski, A Piotrowski, ... Semiconductor science and technology 28 (10), 105017, 2013 | 21 | 2013 |
| Measurements of low frequency noise of infrared photo-detectors with transimpedance detection system Ł Ciura, A Kolek, W Gawron, A Kowalewski, D Stanaszek Metrology and Measurement Systems 21 (3), 2014 | 17 | 2014 |
| Status of HgCdTe barrier infrared detectors grown by MOCVD in Military University of Technology M Kopytko, K Jóźwikowski, P Martyniuk, W Gawron, P Madejczyk, ... Journal of Electronic Materials 45 (9), 4563-4573, 2016 | 14 | 2016 |
| Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition P Martyniuk, D Benyahia, A Kowalewski, Ł Kubiszyn, D Stępień, ... Solid-State Electronics 119, 1-4, 2016 | 14 | 2016 |
| Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices J Wróbel, Ł Ciura, M Motyka, F Szmulowicz, A Kolek, A Kowalewski, ... Semiconductor Science and Technology 30 (11), 115004, 2015 | 14 | 2015 |
| Modeling of midwavelength infrared InAs/GaSb type II superlattice detectors P Martyniuk, J Wrobel, E Plis, P Madejczyk, W Gawron, A Kowalewski, ... Optical Engineering 52 (6), 061307, 2013 | 11 | 2013 |
| Calculations of dark current in interband cascade type-II infrared InAs/GaSb superlattice detector K Hackiewicz, P Martyniuk, J Rutkowski, A Kowalewski Acta Phys. Pol. A 132 (4), 1415-1419, 2017 | 5 | 2017 |
| MOCVD grown HgCdTe barrier detectors for MWIR high-operating temperature operation A Kębłowski, W Gawron, P Martyniuk, K Jóźwikowski, A Kowalewski, ... Optical Engineering 54 (10), 105105-105105, 2015 | 5 | 2015 |
| Analysis of temperature dependence of dark current mechanisms in mid-wavelength infrared pin type-II superlattice photodiodes J Wróbel, E Plis, W Gawron, M Motyka, P Martyniuk, P Madejczyk, ... Sensors and Materials 26 (4), 235-244, 2014 | 5 | 2014 |
| New wet etching solution molar ratio for processing T2SLs InAs/GaSb nBn MWIR infrared detectors grown on GaSb substrates A Kowalewski, P Martyniuk, O Markowska, D Benyahia, W Gawron Materials Science in Semiconductor Processing 41, 261-264, 2016 | 4 | 2016 |
| Low-frequency noise in type-II superlattice MWIR nBn detector L Ciura, A Kolek, Z Zawiślak, AW Stadler, A Kowalewski, P Martyniuk, ... 2013 22nd International Conference on Noise and Fluctuations (ICNF), 1-4, 2013 | 4 | 2013 |
| Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design E Gomółka, O Markowska, M Kopytko, A Kowalewski, P Martyniuk, ... Bulletin of the Polish Academy of Sciences. Technical Sciences 66 (3), 2018 | 3 | 2018 |
| MWIR type-II InAs/GaSb superlattice interband cascade photodetectors W Pusz, A Kowalewski, W Gawron, E Plis, S Krishna, A Rogalski Infrared Sensors, Devices, and Applications III 8868, 88680M, 2013 | 3 | 2013 |
| The Numerical–Experimental Enhanced Analysis of HOT MCT Barrier Infrared Detectors K Jóźwikowski, J Piotrowski, A Jóźwikowska, M Kopytko, P Martyniuk, ... Journal of Electronic Materials 46 (9), 5471-5478, 2017 | 2 | 2017 |
| Demonstration of mid-wave type-II superlattice InAs/GaSb single pixel barrier detector with GaAs immersion lens P Martyniuk, W Gawron, D Stępień, D Benyahia, A Kowalewski, ... IEEE Electron Device Letters 37 (1), 64-66, 2015 | 2 | 2015 |
| Dark current simulation in interband cascade photodetectors operating in room temperature K Hackiewicz, P Martyniuk, J Rutkowski, A Kowalewski 12th Conference on Integrated Optics: Sensors, Sensing Structures, and …, 2017 | 1 | 2017 |
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