Péter Udvarhelyi
Péter Udvarhelyi
Wigner Research Centre for Physics
Zweryfikowany adres z wigner.hu
Cytowane przez
Cytowane przez
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
R Nagy, M Niethammer, M Widmann, YC Chen, P Udvarhelyi, C Bonato, ...
Nature communications 10 (1), 1-8, 2019
Spin-strain interaction in nitrogen-vacancy centers in diamond
P Udvarhelyi, VO Shkolnikov, A Gali, G Burkard, A Pályi
Physical Review B 98 (7), 075201, 2018
Electrically driven optical interferometry with spins in silicon carbide
KC Miao, A Bourassa, CP Anderson, SJ Whiteley, AL Crook, SL Bayliss, ...
Science Advances 5 (11), eaay0527, 2019
Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
N Morioka, C Babin, R Nagy, I Gediz, E Hesselmeier, D Liu, M Joliffe, ...
Nature communications 11 (1), 2516, 2020
Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in -
P Udvarhelyi, G Thiering, N Morioka, C Babin, F Kaiser, D Lukin, ...
Physical Review Applied 13 (5), 054017, 2020
Spectrally stable defect qubits with no inversion symmetry for robust spin-to-photon interface
P Udvarhelyi, R Nagy, F Kaiser, SY Lee, J Wrachtrup, A Gali
Physical Review Applied 11 (4), 044022, 2019
Detection of single W-centers in silicon
Y Baron, A Durand, P Udvarhelyi, T Herzig, M Khoury, S Pezzagna, ...
ACS Photonics 9 (7), 2337-2345, 2022
Ab Initio Spin-Strain Coupling Parameters of Divacancy Qubits in Silicon Carbide
P Udvarhelyi, A Gali
Physical Review Applied 10 (5), 054010, 2018
Identification of a telecom wavelength single photon emitter in silicon
P Udvarhelyi, B Somogyi, G Thiering, A Gali
Physical review letters 127 (19), 196402, 2021
Giant shift upon strain on the fluorescence spectrum of VNNB color centers in h-BN
S Li, JP Chou, A Hu, MB Plenio, P Udvarhelyi, G Thiering, M Abdi, A Gali
npj Quantum Information 6 (1), 85, 2020
Carbon defect qubit in two-dimensional WS2
S Li, G Thiering, P Udvarhelyi, V Ivády, A Gali
Nature communications 13 (1), 1210, 2022
Ultraviolet quantum emitters in hexagonal boron nitride from carbon clusters
S Li, A Pershin, G Thiering, P Udvarhelyi, A Gali
The Journal of Physical Chemistry Letters 13 (14), 3150-3157, 2022
Ab initio theory of the defect in diamond for quantum memory implementation
P Udvarhelyi, G Thiering, E Londero, A Gali
Physical Review B 96 (15), 155211, 2017
Optically-active spin defects in few-layer thick hexagonal boron nitride
A Durand, T Clua-Provost, F Fabre, P Kumar, J Li, JH Edgar, P Udvarhelyi, ...
arXiv preprint arXiv:2304.12071, 2023
Controlled Surface Modification to Revive Shallow NV Centers
JN Neethirajan, T Hache, D Paone, D Pinto, A Denisenko, R Stöhr, ...
Nano Letters 23 (7), 2563-2569, 2023
An L-band emitter with quantum memory in silicon
P Udvarhelyi, A Pershin, P Deák, A Gali
npj Computational Materials 8 (1), 262, 2022
The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium
P Deák, P Udvarhelyi, G Thiering, A Gali
Nature Communications 14 (1), 361, 2023
A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields
P Udvarhelyi, T Clua-Provost, A Durand, J Li, JH Edgar, B Gil, ...
npj Computational Materials 9 (1), 150, 2023
Strain Engineering for Transition Metal Defects in SiC
B Tissot, P Udvarhelyi, A Gali, G Burkard
arXiv preprint arXiv:2310.19719, 2023
Solid state defect emitters with no electrical activity
P Li, S Li, P Udvarhelyi, B Huang, A Gali
arXiv preprint arXiv:2310.09849, 2023
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