Obserwuj
Krishna Mandal
Krishna Mandal
Inne imiona/nazwiskaKrishna C Mandal
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA
Zweryfikowany adres z cec.sc.edu - Strona główna
Tytuł
Cytowane przez
Cytowane przez
Rok
Studies on new chemically deposited photoconducting antimony trisulphide thin films
O Savadogo, KC Mandal
Solar energy materials and solar cells 26 (1-2), 117-136, 1992
2501992
Optical properties of Nd 3+-and Tb 3+-doped KPb 2 Br 5 and RbPb 2 Br 5 with low nonradiative decay
K Rademaker, WF Krupke, RH Page, SA Payne, K Petermann, G Huber, ...
JOSA B 21 (12), 2117-2129, 2004
1042004
Low Cost Schottky Barrier Solar Cells Fabricated on CdSe and Sb2 S 3 Films Chemically Deposited with Silicotungstic Acid
O Savadogo, KC Mandal
Journal of the Electrochemical Society 141 (10), 2871, 1994
961994
Ultrafast Electronic Relaxation Dynamics in PbI2 Semiconductor Colloidal Nanoparticles:  A Femtosecond Transient Absorption Study
A Sengupta, B Jiang, KC Mandal, JZ Zhang
The Journal of Physical Chemistry B 103 (16), 3128-3137, 1999
921999
High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis
SK Chaudhuri, KJ Zavalla, KC Mandal
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2013
852013
Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach
SK Chaudhuri, KJ Zavalla, KC Mandal
Applied Physics Letters 102 (3), 2013
782013
Characterizations of Antimony Tri‐Sulfide Chemically Deposited with Silicotungstic Acid
O Savadogo, KC Mandal
Journal of the Electrochemical Society 139 (1), L16, 1992
691992
Low Energy X-Ray and-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer
KC Mandal, PG Muzykov, SK Chaudhuri, JR Terry
IEEE Transactions on Nuclear Science 60 (4), 2888-2893, 2013
652013
Characterization of semi-insulating 4H silicon carbide for radiation detectors
KC Mandal, RM Krishna, PG Muzykov, S Das, TS Sudarshan
IEEE Transactions on Nuclear Science 58 (4), 1992-1999, 2011
572011
Characterization of Low-Defectand CdTe Crystals for High-Performance Frisch Collar Detectors
KC Mandal, SH Kang, M Choi, A Kargar, MJ Harrison, DS McGregor, ...
IEEE Transactions on Nuclear Science 54 (4), 802-806, 2007
572007
III–VI chalcogenide semiconductor crystals for broadband tunable THz sources and sensors
KC Mandal, SH Kang, M Choi, J Chen, XC Zhang, JM Schleicher, ...
IEEE Journal of Selected Topics in Quantum Electronics 14 (2), 284-288, 2008
552008
Low‐cost technique for preparing n‐Sb2S3/p‐Si heterojunction solar cells
O Savadogo, KC Mandal
Applied physics letters 63 (2), 228-230, 1993
541993
In situ infrared evidence for the electrochemical incorporation of hydrogen into Si and Ge
KC Mandal, F Ozanam, JN Chazalviel
Applied physics letters 57 (26), 2788-2790, 1990
541990
Ultrafast Electronic Relaxation Dynamics in Layered Iodide Semiconductors:  A Comparative Study of Colloidal BiI3 and PbI2 Nanoparticles
A Sengupta, KC Mandal, JZ Zhang
The Journal of Physical Chemistry B 104 (40), 9396-9403, 2000
522000
Electronic structure of substitutional defects and vacancies in GaSe
Z Rak, SD Mahanti, KC Mandal, NC Fernelius
Journal of Physics and Chemistry of Solids 70 (2), 344-355, 2009
502009
Advances in high-resolution radiation detection using 4H-SiC epitaxial layer devices
KC Mandal, JW Kleppinger, SK Chaudhuri
Micromachines 11 (3), 254, 2020
492020
Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies
MA Mannan, SK Chaudhuri, KV Nguyen, KC Mandal
Journal of Applied Physics 115 (22), 2014
492014
Doping dependence of electronic and mechanical properties of GaSe 1− x Te x and Ga 1− x In x Se from first principles
Z Rak, SD Mahanti, KC Mandal, NC Fernelius
Physical Review B 82 (15), 155203, 2010
492010
Correlation of deep levels with detector performance in 4H-SiC epitaxial Schottky barrier alpha detectors
KC Mandal, SK Chaudhuri, KV Nguyen, MA Mannan
IEEE Transactions on Nuclear Science 61 (4), 2338-2344, 2014
482014
Defect levels in Cu2ZnSn (SxSe1− x) 4 solar cells probed by current-mode deep level transient spectroscopy
S Das, SK Chaudhuri, RN Bhattacharya, KC Mandal
Applied Physics Letters 104 (19), 2014
482014
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