Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy A Kanjilal, JL Hansen, P Gaiduk, AN Larsen, N Cherkashin, A Claverie, ...
Applied Physics Letters 82 (8), 1212-1214, 2003
162 2003 Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis P Dimitrakis, E Kapetanakis, D Tsoukalas, D Skarlatos, C Bonafos, ...
Solid-State Electronics 48 (9), 1511-1517, 2004
107 2004 Implantation and diffusion of phosphorous in germanium A Chroneos, D Skarlatos, C Tsamis, A Christofi, DS McPhail, R Hung
Materials science in semiconductor processing 9 (4-5), 640-643, 2006
69 2006 Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, K Beltsios, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
68 2004 Germanium substrate loss during low temperature annealing and its influence on ion-implanted phosphorous dose loss N Ioannou, D Skarlatos, C Tsamis, CA Krontiras, SN Georga, A Christofi, ...
Applied Physics Letters 93 (10), 2008
62 2008 MOS memory structures by very-low-energy-implanted Si in thin SiO2 P Dimitrakis, E Kapetanakis, P Normand, D Skarlatos, D Tsoukalas, ...
Materials Science and Engineering: B 101 (1-3), 14-18, 2003
49 2003 Processing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P Normand, P Dimitrakis, E Kapetanakis, D Skarlatos, K Beltsios, ...
Microelectronic engineering 73, 730-735, 2004
36 2004 Estimation of the number of interstitial atoms injected in silicon during thin oxide formation D Skarlatos, M Omri, A Claverie, D Tsoukalas
Journal of the Electrochemical Society 146 (6), 2276, 1999
29 1999 Inert ambient annealing effect on MANOS capacitor memory characteristics N Nikolaou, P Dimitrakis, P Normand, D Skarlatos, K Giannakopoulos, ...
Nanotechnology 26 (13), 134004, 2015
24 2015 ZrO2 and Al2O3 thin films on Ge (100) grown by ALD: An XPS investigation L Sygellou, V Gianneta, N Xanthopoulos, D Skarlatos, S Georga, ...
Surface Science Spectra 18 (1), 58-67, 2011
24 2011 Measurements and analysis of the Epidaurus Ancient Theatre acoustics S Psarras, P Hatziantoniou, M Kountouras, NA Tatlas, JN Mourjopoulos, ...
Acta Acustica United with Acustica 99 (1), 30-39, 2013
21 2013 Atomic layer deposited zirconium oxide electron injection layer for efficient organic light emitting diodes M Vasilopoulou, S Kennou, S Ladas, SN Georga, M Botzakaki, ...
Organic Electronics 14 (1), 312-319, 2013
20 2013 Interfacial properties of ALD-deposited Al2O3/p-type germanium MOS structures: Influence of oxidized Ge interfacial layer dependent on Al2O3 thickness M Botzakaki, A Kerasidou, L Sygellou, V Ioannou-Sougleridis, ...
ECS Solid State Letters 1 (2), P32, 2012
20 2012 Measurements and analysis of the acoustics of the ancient theatre of Epidaurus S Vassilantonopoulos, P Hatziantoniou, NA Tatlas, T Zakynthinos, ...
Proceedings of EAA Conference on the Acoustics of Ancient Theaters, Patras …, 2011
18 2011 Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, D Tsoukalas, ...
Microelectronic engineering 67, 629-634, 2003
18 2003 Point defect injection during nitrous oxidation of silicon at low temperatures D Skarlatos, D Tsoukalas, LF Giles, A Claverie
Journal of Applied Physics 87 (3), 1103-1109, 2000
18 2000 Strong diffusion suppression of low energy–implanted phosphorous in germanium by N2 co-implantation C Thomidis, M Barozzi, M Bersani, V Ioannou-Sougleridis, NZ Vouroutzis, ...
ECS Solid State Letters 4 (6), P47, 2015
17 2015 Measurement and analysis of acoustics of Epidaurus theatre S Vassilantonopoulos, T Zakynthinos, P Hatziantoniou, NA Tatlas, ...
Hellenic Institute of Acoustics Conference, Thessaloniki, 2004
17 2004 Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients LF Giles, M Omri, B De Mauduit, A Claverie, D Skarlatos, D Tsoukalas, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999
16 1999 Oxidation of nitrogen-implanted silicon: Comparison of nitrogen distribution and electrical properties of oxides formed by very low and medium energy D Skarlatos, E Kapetanakis, P Normand, C Tsamis, M Perego, S Ferrari, ...
Journal of applied physics 96 (1), 300-309, 2004
15 2004 