| Vertical Ga2O3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm2 N Allen, M Xiao, X Yan, K Sasaki, MJ Tadjer, J Ma, R Zhang, H Wang, ... IEEE Electron Device Letters 40 (9), 1399-1402, 2019 | 174 | 2019 |
| Connection between carbon incorporation and growth rate for GaN epitaxial layers prepared by OMVPE T Ciarkowski, N Allen, E Carlson, R McCarthy, C Youtsey, J Wang, P Fay, ... Materials 12 (15), 2455, 2019 | 34 | 2019 |
| Thin-film GaN Schottky diodes formed by epitaxial lift-off J Wang, C Youtsey, R McCarthy, R Reddy, N Allen, L Guido, J Xie, ... Applied Physics Letters 110 (17), 2017 | 23 | 2017 |
| Heteroepitaxial Ge MOS devices on Si using composite AlAs/GaAs buffer PD Nguyen, MB Clavel, PS Goley, JS Liu, NP Allen, LJ Guido, MK Hudait IEEE Journal of the Electron Devices Society 3 (4), 341-348, 2015 | 22 | 2015 |
| Therapeutic hypothermia in Brazil: a MultiProfessional national survey GF Variane, LM Cunha, P Pinto, P Brandao, RS Mascaretti, M Magalhães, ... American Journal of Perinatology 36 (11), 1150-1156, 2019 | 19 | 2019 |
| Characterization of inhomogeneous Ni/GaN Schottky diode with a modified log-normal distribution of barrier heights N Allen, T Ciarkowski, E Carlson, L Guido Semiconductor Science and Technology 34 (9), 095003, 2019 | 9 | 2019 |
| GaInN/GaN solar cells made without p-type material using oxidized Ni/Au Schottky electrodes KT Chern, NP Allen, TA Ciarkowski, OA Laboutin, RE Welser, LJ Guido Materials Science in Semiconductor Processing 55, 2-6, 2016 | 9 | 2016 |
| Facet effects on generation-recombination currents in semiconductor laser diodes WE Fenwick, RJ Deri, SH Baxamusa, DL Pope, MC Boisselle, DM Dutra, ... Semiconductor Science and Technology 37 (9), 09LT01, 2022 | 4 | 2022 |
| Thin-film GaN p-n Diodes and Epitaxial Lift-Off From GaN Substrates J Wang, C Youtsey, R McCarthy, R Reddy, N Allen, L Guido, A Xie, ... Compound Semiconductor Week 2017, Session B8: Surfaces and Processing …, 2017 | 4 | 2017 |
| Base N Allen, TE Bauer, MF Persson, N Jansson, P Mercier-Langevin Precious, and Critical Metal Deposits of the Paleoproterozoic Skellefte …, 2022 | 3 | 2022 |
| Paper-based capacitive mass sensor N Allen, P Pinto, A Traore, M Agah SENSORS, 2011 IEEE, 562-564, 2011 | 3 | 2011 |
| Determination of nonradiative carrier lifetimes in quantum well laser diodes from subthreshold characteristics E McVay, RJ Deri, WE Fenwick, SH Baxamusa, J Li, NP Allen, ... Semiconductor Science and Technology 38 (10), 105009, 2023 | 2 | 2023 |
| GaInN/GaN-Ni/Au transparent conducting oxide Schottky barrier solar cells K Chern, L Guido, T Ciarkowski, N Allen, O Laboutin, R Welser, V Elarde Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th., 2014 | 2 | 2014 |
| Gallium Nitride Superjunction Transistor (Continued Funding Report) NP Allen Lawrence Livermore National Lab.(LLNL), Livermore, CA (United States), 2022 | 1 | 2022 |
| Electrical Characterization of Ruthenium Dioxide Schottky Contacts on GaN NP Allen Virginia Polytechnic Institute and State University, 2014 | 1 | 2014 |
| Superjunction devices formed by field assisted diffusion of dopants V Lordi, NP Allen, Q Shao, CD Frye, KE Kweon, LF Voss, JB Varley US Patent App. 17/880,552, 2024 | | 2024 |
| Determination of Laser Diode Nonradiative Carrier Lifetimes using Subthreshold Power-Current-Voltage Characteristics RJ Deri, E McVay, WE Fenwick, SH Baxamusa, J Li, NP Allen, ... 2023 IEEE Photonics Conference (IPC), 1-2, 2023 | | 2023 |
| Determination of Laser Diode Nonradiative CarrierLifetimes using Subthreshold Power-Current-VoltageCharacteristics E McVay, R Deri, W Fenwick, S Baxamusa, J Li, N Allen, D Mittelberger, ... Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States), 2023 | | 2023 |
| LLNL_IPC_methodology_06 R Deri, E McVay, W Fenwick, S Baxamusa, J Li, N Allen, D Mittelberger, ... Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States), 2023 | | 2023 |
| Gallium Nitride Superjunction Fin Field Effect Transistor (Continued Funding Report) NP Allen, LF Voss, CD Frye, K KWeon, J Varley, Q Shao Lawrence Livermore National Lab.(LLNL), Livermore, CA (United States), 2021 | | 2021 |
Louis J. GuidoBradley Department of Electrical and Computer Engineering, Virginia TechZweryfikowany adres z vt.edu
