Liang Zhao
Cytowane przez
Cytowane przez
Monolithic 3D integration of logic and memory: Carbon nanotube FETs, resistive RAM, and silicon FETs
MM Shulaker, TF Wu, A Pal, L Zhao, Y Nishi, K Saraswat, HSP Wong, ...
2014 IEEE International Electron Devices Meeting, 27.4. 1-27.4. 4, 2014
Multi-level control of conductive nano-filament evolution in HfO 2 ReRAM by pulse-train operations
L Zhao, HY Chen, SC Wu, Z Jiang, S Yu, TH Hou, HSP Wong, Y Nishi
Nanoscale 6 (11), 5698-5702, 2014
Formation of Anodic Aluminum Oxide with Serrated Nanochannels
D Li, L Zhao, C Jiang, JG Lu
Nano letters 10 (8), 2766-2771, 2010
Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations
L Zhao, S Clima, B Magyari-Köpe, M Jurczak, Y Nishi
Applied Physics Letters 107 (1), 2015
Design and optimization methodology for 3D RRAM arrays
Y Deng, HY Chen, B Gao, S Yu, SC Wu, L Zhao, B Chen, Z Jiang, X Liu, ...
2013 IEEE International Electron Devices Meeting, 25.7. 1-25.7. 4, 2013
Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory
L Zhao, SG Park, B Magyari-Köpe, Y Nishi
Applied Physics Letters 102 (8), 2013
Ultrathin (∼ 2nm) HfOx as the fundamental resistive switching element: Thickness scaling limit, stack engineering and 3D integration
L Zhao, Z Jiang, HY Chen, J Sohn, K Okabe, B Magyari-Köpe, HSP Wong, ...
2014 IEEE International Electron Devices Meeting, 6.6. 1-6.6. 4, 2014
Molecular dynamics study of the switching mechanism of carbon-based resistive memory
Y He, J Zhang, X Guan, L Zhao, Y Wang, H Qian, Z Yu
IEEE Transactions on Electron Devices 57 (12), 3434-3441, 2010
Dopant selection rules for extrinsic tunability of HfOxRRAM characteristics: A systematic study
L Zhao, SW Ryu, A Hazeghi, D Duncan, B Magyari-Köpe, Y Nishi
2013 Symposium on VLSI Technology, T106-T107, 2013
First principles modeling of charged oxygen vacancy filaments in reduced TiO2–implications to the operation of non-volatile memory devices
L Zhao, SG Park, B Magyari-Köpe, Y Nishi
Mathematical and Computer Modelling 58 (1-2), 275-281, 2013
Phase‐Transition‐Induced VO2 Thin Film IR Photodetector and Threshold Switching Selector for Optical Neural Network Applications
X Zhou, L Zhao, W Zhen, Y Lin, C Wang, T Pan, L Li, G Du, L Lu, X Cao, ...
Advanced Electronic Materials, 2001254, 2021
Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in TiO2-Based Unipolar Resistive Memory
L Zhao, J Zhang, Y He, X Guan, H Qian, Z Yu
IEEE Electron Device Letters 32 (5), 677-679, 2011
Polaronic interactions between oxygen vacancies in rutile TiO 2
L Zhao, B Magyari-Köpe, Y Nishi
Phyiscal Review B 95 (5), 054104, 2017
Cosime: Fefet based associative memory for in-memory cosine similarity search
CK Liu, H Chen, M Imani, K Ni, A Kazemi, AF Laguna, M Niemier, XS Hu, ...
Proceedings of the 41st IEEE/ACM International Conference on Computer-Aided …, 2022
Improved multi-level control of RRAM using pulse-train programming
L Zhao, HY Chen, SC Wu, Z Jiang, S Yu, TH Hou, HSP Wong, Y Nishi
Proceedings of Technical Program-2014 International Symposium on VLSI …, 2014
3-D resistive memory arrays: From intrinsic switching behaviors to optimization guidelines
H Li, B Gao, HYH Chen, Z Chen, P Huang, R Liu, L Zhao, ZJ Jiang, L Liu, ...
IEEE Transactions on Electron Devices 62 (10), 3160-3167, 2015
Electrochemical simulation of filament growth and dissolution in conductive-bridging RAM (CBRAM) with cylindrical coordinates
S Lin, L Zhao, J Zhang, H Wu, Y Wang, H Qian, Z Yu
2012 International Electron Devices Meeting, 26.3. 1-26.3. 4, 2012
Systematic studies of the effects of group-III dopants (La, Y, Al, and Gd) in Hf0. 5Zr0. 5O2 ferroelectrics by ab initio simulations
L Zhao, J Liu, Y Zhao
Applied Physics Letters 119 (17), 2021
Towards high-speed, write-disturb tolerant 3D vertical RRAM arrays
HY Chen, B Gao, H Li, R Liu, P Huang, Z Chen, B Chen, F Zhang, L Zhao, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
Temperature-dependent photoconductance of heavily doped ZnO nanowires
D Li, L Zhao, R Wu, C Ronning, JG Lu
Nano Research 4 (11), 1110-1116, 2011
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