Michael Alles
Michael Alles
Verified email at vanderbilt.edu
Title
Cited by
Cited by
Year
Charge collection and charge sharing in a 130 nm CMOS technology
OA Amusan, AF Witulski, LW Massengill, BL Bhuva, PR Fleming, ML Alles, ...
IEEE Transactions on nuclear science 53 (6), 3253-3258, 2006
3922006
The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM
KM Warren, RA Weller, MH Mendenhall, RA Reed, DR Ball, CL Howe, ...
IEEE transactions on nuclear science 52 (6), 2125-2131, 2005
1762005
A bias-dependent single-event compact model implemented into BSIM4 and a 90 nm CMOS process design kit
JS Kauppila, AL Sternberg, ML Alles, AM Francis, J Holmes, OA Amusan, ...
IEEE Transactions on nuclear Science 56 (6), 3152-3157, 2009
1492009
HBD layout isolation techniques for multiple node charge collection mitigation
JD Black, AL Sternberg, ML Alles, AF Witulski, BL Bhuva, LW Massengill, ...
IEEE transactions on nuclear science 52 (6), 2536-2541, 2005
1222005
Effect of well and substrate potential modulation on single event pulse shape in deep submicron CMOS
S DasGupta, AF Witulski, BL Bhuva, ML Alles, RA Reed, OA Amusan, ...
IEEE Transactions on Nuclear Science 54 (6), 2407-2412, 2007
1062007
Analysis of parasitic PNP bipolar transistor mitigation using well contacts in 130 nm and 90 nm CMOS technology
BD Olson, OA Amusan, S Dasgupta, LW Massengill, AF Witulski, ...
IEEE Transactions on Nuclear Science 54 (4), 894-897, 2007
1062007
Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies
IS Esqueda, HJ Barnaby, ML Alles
IEEE transactions on nuclear science 52 (6), 2259-2264, 2005
982005
Directional sensitivity of single event upsets in 90 nm CMOS due to charge sharing
OA Amusan, LW Massengill, MP Baze, BL Bhuva, AF Witulski, ...
IEEE Transactions on Nuclear Science 54 (6), 2584-2589, 2007
942007
Radiation effects in advanced multiple gate and silicon-on-insulator transistors
E Simoen, M Gaillardin, P Paillet, RA Reed, RD Schrimpf, ML Alles, ...
IEEE Transactions on Nuclear Science 60 (3), 1970-1991, 2013
892013
Single-event charge enhancement in SOI devices
LW Massengill, EV Kerns, SE Kerns, ML Alles
IEEE Electron Device Letters 11 (2), 98-99, 1990
881990
Model for CMOS/SOI single-event vulnerability
SE Kerns, LW Massengill, DV Kerns, ML Alles, TW Houston, H Lu, LR Hite
IEEE Transactions on Nuclear Science 36 (6), 2305-2310, 1989
811989
Technology scaling and soft error reliability
LW Massengill, BL Bhuva, WT Holman, ML Alles, TD Loveless
2012 IEEE International Reliability Physics Symposium (IRPS), 3C. 1.1-3C. 1.7, 2012
752012
Implantation process using sub-stoichiometric, oxygen doses at different energies
RP Dolan, BF Cordts III, MJ Anc, ML Alles
US Patent 6,417,078, 2002
742002
The impact of delta-rays on single-event upsets in highly scaled SOI SRAMs
MP King, RA Reed, RA Weller, MH Mendenhall, RD Schrimpf, ML Alles, ...
IEEE Transactions on Nuclear Science 57 (6), 3169-3175, 2010
682010
Low-energy X-ray and ozone-exposure induced defect formation in graphene materials and devices
EX Zhang, AKM Newaz, B Wang, S Bhandaru, CX Zhang, DM Fleetwood, ...
IEEE transactions on nuclear science 58 (6), 2961-2967, 2011
662011
Single event mechanisms in 90 nm triple-well CMOS devices
T Roy, AF Witulski, RD Schrimpf, ML Alles, LW Massengill
IEEE Transactions on Nuclear Science 55 (6), 2948-2956, 2008
612008
A comparison of the SEU response of planar and FinFET D flip-flops at advanced technology nodes
P Nsengiyumva, DR Ball, JS Kauppila, N Tam, M McCurdy, WT Holman, ...
IEEE Transactions on Nuclear Science 63 (1), 266-272, 2016
542016
Ozone-exposure and annealing effects on graphene-on-SiO2 transistors
EX Zhang, AKM Newaz, B Wang, CX Zhang, DM Fleetwood, KI Bolotin, ...
Applied physics letters 101 (12), 121601, 2012
532012
Effects of process parameter distributions and ion strike locations on SEU cross-section data (CMOS SRAMs)
LW Massengill, ML Alles, SE Kerns, KL Jones
IEEE transactions on nuclear science 40 (6), 1804-1811, 1993
511993
Substrate engineering concepts to mitigate charge collection in deep trench isolation technologies
JA Pellish, RA Reed, RD Schrimpf, ML Alles, M Varadharajaperumal, ...
IEEE Transactions on Nuclear Science 53 (6), 3298-3305, 2006
482006
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